公开(公告)号：US09377414B2

公开(公告)日：2016-06-28

申请号：US14242802

申请日：2014-04-01

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Richard W. Solarz ,  David R. Shafer ,  Bin-Ming Benjamin Tsai ,  David L. Brown

IPC: G01N21/95 ,  G01N21/956 ,  G01N21/88

CPC classification number: G01N21/95 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/068 ,  G03F1/84 ,  G03F7/70616 ,  H05G2/008

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.