公开(公告)号：US20250123225A1

公开(公告)日：2025-04-17

申请号：US18613874

申请日：2024-03-22

Applicant: KLA Corporation

Inventor： Houssam Chouaib ,  Zhengquan Tan ,  HaoMiao Chang ,  Valeria Dimastrodonato ,  Anderson Chou ,  Boxue Chen

IPC: G01N23/2251

Abstract: An inspection system may receive first measurement data of training samples after a first process step with an in-line measurement sub-system, where the first process step is prior to fabrication of a test feature on the one or more training samples; and receive second measurement data of the test feature after a second process step, where the second process step is after fabrication of the test feature. An inspection system may determine delta metrics associated with the first and second measurement data for the test feature. An inspection system may generate a measurement model for determining metrology measurements of the test feature based on at least one of the second measurement data or the delta metrics. An inspection system may determine values of the metrology measurements for additional instances of the test feature based on at least one of the second measurement data or the delta metrics.

公开(公告)号：US20250012734A1

公开(公告)日：2025-01-09

申请号：US18743118

申请日：2024-06-14

Applicant: KLA Corporation

Inventor： Zhengquan Tan ,  Houssam Chouaib ,  Anderson Chou

IPC: G01N21/95 ,  G01N21/88 ,  H01L21/66

Abstract: Methods and systems for performing multiple pass optical measurements of semiconductor structures are presented herein. A measurement beam is incident on the surface of a semiconductor wafer more than once. In some embodiments, the measurement beam is incident multiple times at the same measurement site on the semiconductor wafer in an optical path between the illumination source and the detector. In some other embodiments, the measurement beam is incident at different measurement sites on the semiconductor wafer in an optical path between the illumination source and the detector. In these embodiments, an instance of the same nominal structure under measurement is fabricated at each different measurement site. In a further aspect, an optical modulation element is disposed in the measurement path. In another further aspect, multiple pass measurements using different combinations of optical modulation targets are combined in a multi-target measurement to further enhance measurement sensitivity and break correlations.

公开(公告)号：US11796390B2

公开(公告)日：2023-10-24

申请号：US17856660

申请日：2022-07-01

Applicant: KLA Corporation

Inventor： Tianhan Wang ,  Aaron Rosenberg ,  Dawei Hu ,  Alexander Kuznetsov ,  Manh Dang Nguyen ,  Stilian Pandev ,  John Lesoine ,  Qiang Zhao ,  Liequan Lee ,  Houssam Chouaib ,  Ming Di ,  Torsten R. Kaack ,  Andrei V. Shchegrov ,  Zhengquan Tan

IPC: G01J3/18 ,  G01J3/28 ,  G01N21/55 ,  G01N21/956 ,  G01N21/21 ,  G01N21/25 ,  G01N21/88 ,  G01N21/84

CPC classification number: G01J3/18 ,  G01J3/28 ,  G01N21/21 ,  G01N21/25 ,  G01N21/55 ,  G01N21/8422 ,  G01N21/8851 ,  G01N21/956 ,  G01J2003/2836 ,  G01N2021/8883

Abstract: A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.