公开(公告)号：US20220236181A1

公开(公告)日：2022-07-28

申请号：US17160547

申请日：2021-01-28

Applicant: KLA Corporation

Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Amnon Manassen ,  Yoram Uziel

IPC: G01N21/41 ,  G01N21/3563

Abstract: A method for optical inspection includes illuminating a patterned polymer layer on a semiconductor wafer with optical radiation over a range of infrared wavelengths, measuring spectral properties of the optical radiation reflected from multiple points on the patterned polymer layer over the range of infrared wavelengths, and based on the measured spectral properties, computing a complex refractive index of the patterned polymer layer.

公开(公告)号：US11353799B1

公开(公告)日：2022-06-07

申请号：US16928468

申请日：2020-07-14

Applicant: KLA Corporation

Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Anna Golotsvan ,  Rawi Dirawi ,  Chen Dror ,  Nir BenDavid ,  Amnon Manassen ,  Oren Lahav ,  Shlomit Katz

IPC: G03F7/20 ,  H01L21/66 ,  G01B11/27

Abstract: A metrology system includes a controller communicatively coupled to one or more metrology tools, the controller including one or more processors configured to execute program instructions causing the one or more processors to receive one or more metrology measurements of one or more metrology targets of a metrology sample, a metrology target of the one or more metrology targets including one or more target designs with one or more cells, the one or more target designs being generated on one or more layers of the metrology sample; determine one or more errors based on the one or more metrology measurements; and determine one or more correctables to adjust one or more sources of error corresponding to the one or more errors, the one or more correctables being configured to reduce an amount of noise in the one or more metrology measurements generated by the one or more sources of errors.

公开(公告)号：US20220155693A1

公开(公告)日：2022-05-19

申请号：US16928468

申请日：2020-07-14

Applicant: KLA Corporation

Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Anna Golotsvan ,  Rawi Dirawi ,  Chen Dror ,  Nir BenDavid ,  Amnon Manassen ,  Oren Lahav ,  Shlomit Katz

IPC: G03F7/20 ,  G01B11/27 ,  H01L21/66

Abstract: A metrology system includes a controller communicatively coupled to one or more metrology tools, the controller including one or more processors configured to execute program instructions causing the one or more processors to receive one or more metrology measurements of one or more metrology targets of a metrology sample, a metrology target of the one or more metrology targets including one or more target designs with one or more cells, the one or more target designs being generated on one or more layers of the metrology sample; determine one or more errors based on the one or more metrology measurements; and determine one or more correctables to adjust one or more sources of error corresponding to the one or more errors, the one or more correctables being configured to reduce an amount of noise in the one or more metrology measurements generated by the one or more sources of errors.

公开(公告)号：US12131959B2

公开(公告)日：2024-10-29

申请号：US17469280

申请日：2021-09-08

Applicant: KLA Corporation

Inventor： Liran Yerushalmi ,  Daria Negri ,  Ohad Bachar ,  Yossi Simon ,  Amnon Manassen ,  Nir Ben David ,  Yoram Uziel ,  Etay Lavert

IPC: H01L21/66 ,  G05B19/418

CPC classification number: H01L22/12 ,  G05B19/41875 ,  G05B2219/45031

Abstract: A system and method for generating a quality parameter value of a semiconductor device wafer (SDW), during fabrication thereof, the method including designating a plurality of measurement site sets (MSSs) on the SDW, each of the MSSs including a first measurement-orientation site (FMS) and a second measurement-orientation site (SMS), the FMS and the SMS being different measurement sites on the SDW, generating a first measurement-orientation quality parameter dataset (FMQPD) by measuring features formed within each the FMS of at least one of the MSSs in a first measurement orientation, generating a second measurement-orientation quality parameter dataset (SMQPD) by measuring features formed within each the SMS of the at least one of the MSSs in a second measurement orientation and generating at least one tool-induced-shift (TIS)-ameliorated quality parameter value (TAQPV), at least partially based on the FMQPD and the SMQPD.

公开(公告)号：US11604420B2

公开(公告)日：2023-03-14

申请号：US17488010

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Stilian Pandev ,  Min-Yeong Moon ,  Andrei V. Shchegrov ,  Jonathan Madsen ,  Dimitry Sanko ,  Liran Yerushalmi ,  Alexander Kuznetsov ,  Mahendra Dubey

IPC: G03F7/20

Abstract: A self-calibrating overlay metrology system may receive device overlay data from device targets on a sample, determine preliminary device overlay measurements for the device targets including device-scale features using an overlay recipe with the device overlay data as inputs, receive assist overlay data from sets of assist targets on the sample including device-scale features, where a particular set of assist targets includes one or more target pairs formed with two overlay targets having programmed overlay offsets of a selected value with opposite signs along a particular measurement direction. The system may further determine self-calibrating assist overlay measurements for the sets of assist targets based on the assist overlay data, where the self-calibrating assist overlay measurements are linearly proportional to overlay on the sample, and generate corrected overlay measurements for the device targets by adjusting the preliminary device overlay measurements based on the self-calibrating assist overlay measurements.

公开(公告)号：US11604063B2

公开(公告)日：2023-03-14

申请号：US17473742

申请日：2021-09-13

Applicant: KLA Corporation

Inventor： Stilian Pandev ,  Min-Yeong Moon ,  Andrei V. Shchegrov ,  Jonathan Madsen ,  Dimitry Sanko ,  Liran Yerushalmi ,  Alexander Kuznetsov ,  Mahendra Dubey

IPC: G01B21/24

Abstract: An overlay metrology system may receive overlay data for in-die overlay targets within various fields on a skew training sample from one or more overlay metrology tools, wherein the in-die overlay targets within the fields have a range programmed overlay offsets, wherein the fields are fabricated with a range of programmed skew offsets. The system may further generate asymmetric target signals for the in-die overlay targets using an asymmetric function providing a value of zero when physical overlay is zero and a sign indicative of a direction of physical overlay. The system may further generate corrected overlay offsets for the in-die overlay targets on the asymmetric target signals, generate self-calibrated overlay offsets for the in-die overlay targets based on the programmed overlay offsets and the corrected overlay offsets, generate a trained overlay recipe, and generate overlay measurements for in-die overlay targets on additional samples using the trained overlay recipe.

公开(公告)号：US20220344218A1

公开(公告)日：2022-10-27

申请号：US17469280

申请日：2021-09-08

Applicant: KLA Corporation

Inventor： Liran Yerushalmi ,  Daria Negri ,  Ohad Bachar ,  Yossi Simon ,  Amnon Manassen ,  Nir Ben David ,  Yoram Uziel ,  Etay Lavert

IPC: H01L21/66 ,  G01N21/95

Abstract: A system and method for generating a quality parameter value of a semiconductor device wafer (SDW), during fabrication thereof, the method including designating a plurality of measurement site sets (MSSs) on the SDW, each of the MSSs including a first measurement-orientation site (FMS) and a second measurement-orientation site (SMS), the FMS and the SMS being different measurement sites on the SDW, generating a first measurement-orientation quality parameter dataset (FMQPD) by measuring features formed within each the FMS of at least one of the MSSs in a first measurement orientation, generating a second measurement-orientation quality parameter dataset (SMQPD) by measuring features formed within each the SMS of the at least one of the MSSs in a second measurement orientation and generating at least one tool-induced-shift (TIS)-ameliorated quality parameter value (TAQPV), at least partially based on the FMQPD and the SMQPD.

公开(公告)号：US11355375B2

公开(公告)日：2022-06-07

申请号：US16931078

申请日：2020-07-16

Applicant: KLA Corporation

Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Raviv Yohanan ,  Mark Ghinovker

IPC: H01L21/68 ,  G01B11/27 ,  G03F7/20

Abstract: A metrology system and metrology methods are disclosed. The metrology system comprises a set of device features on a first layer of a sample, a first set of target features on a second layer of the sample and overlapping the set of device features, and a second set of target features on the second layer of the sample and overlapping the set of device features. Relative positions of a first set of Moiré fringes and a second set of Moiré fringes indicate overlay error between the first layer of the sample and the second layer of the sample.