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    Device-Like Metrology Targets
    11.
    发明申请
    Device-Like Metrology Targets 审中-公开

    公开(公告)号：US20180188663A1

    公开(公告)日：2018-07-05

    申请号：US15442111

    申请日：2017-02-24

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Amnon Manassen ,  Eran Amit ,  Nuriel Amir ,  Liran Yerushalmi ,  Amit Shaked

    IPC: G03F9/00 ,  G01B11/27

    CPC classification number: G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

    Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

    NEAR FIELD METROLOGY
    12.
    发明申请
    NEAR FIELD METROLOGY 审中-公开
    近场计量学

    公开(公告)号：US20150198524A1

    公开(公告)日：2015-07-16

    申请号：US14583447

    申请日：2014-12-26

    Applicant: KLA-Tencor Corporation

    Inventor： Noam Sapiens ,  Joel Seligson ,  Vladimir Levinski ,  Daniel Kandel ,  Yoel Feler ,  Barak Bringoltz ,  Amnon Manassen ,  Eliav Benisty

    IPC: G01N21/47

    CPC classification number: G01N21/4788 ,  G01N2201/06113 ,  G02B27/56 ,  G02B27/58

    Abstract: Metrology systems and methods are provided herein, which comprise an optical element that is positioned between an objective lens of the system and a target. The optical element is arranged to enhance evanescent modes of radiation reflected by the target. Various configurations are disclosed: the optical element may comprise a solid immersion lens, a combination of Moiré-elements and solid immersion optics, dielectric-metal-dielectric stacks of different designs, and resonating elements to amplify the evanescent modes of illuminating radiation. The metrology systems and methods are configurable to various metrology types, including imaging and scatterometry methods.

    Abstract translation: 本文提供的计量系统和方法包括位于系统的物镜和目标之间的光学元件。 光学元件布置成增强目标反射的辐射消散模式。 公开了各种配置：光学元件可以包括固体浸没透镜，莫尔元件和固体浸没光学元件的组合，不同设计的介电金属 - 电介质叠层以及用于放大照明辐射的渐逝模式的谐振元件。 计量系统和方法可配置为各种计量类型，包括成像和散射方法。

    Overlay Targets with Orthogonal Underlayer Dummyfill
    14.
    发明申请
    Overlay Targets with Orthogonal Underlayer Dummyfill 审中-公开
    覆盖目标与正交底层虚拟填充

    公开(公告)号：US20130293890A1

    公开(公告)日：2013-11-07

    申请号：US13898828

    申请日：2013-05-21

    Applicant: KLA-Tencor Corporation

    Inventor： Nuriel Amir ,  Guy Cohen ,  Vladimir Levinski ,  Michael Adel

    IPC: G01B11/14

    CPC classification number: G01B11/14 ,  G03F7/70633 ,  G03F7/70683

    Abstract: The disclosure is directed to designing and using an overlay target with orthogonal underlayer dummyfill. According to various embodiments, an overlay target may include one or more segmented overlay pattern elements forming at least one overlay target structure. The overlay target may further include one or more inactive pattern elements forming at least one dummyfill target structure. Each of the one or more inactive pattern elements may include dummyfill segmented along an axis orthogonal to a segmentation axis of at least one proximately disposed overlay pattern element. In some embodiments, each of the target structures or layers may be formed from a separate process layer successively disposed upon a substrate, such as a silicon wafer. In some embodiments, the overlay and dummyfill target structures may be twofold or fourfold rotationally symmetric to allow for certain manufacturing or metrology advantages.

    Abstract translation: 本公开旨在设计和使用具有正交底层虚拟填充物的覆盖目标。 根据各种实施例，覆盖目标可以包括形成至少一个覆盖目标结构的一个或多个分段覆盖图案元素。 覆盖目标还可以包括形成至少一个虚拟填充目标结构的一个或多个无效模式元素。 一个或多个非活动图案元素中的每一个可以包括沿着与至少一个近似布置的覆盖图案元素的分割轴正交的轴分割的伪填充。 在一些实施例中，目标结构或层中的每一个可以由连续设置在诸如硅晶片的基底上的单独的处理层形成。 在一些实施例中，覆盖层和虚拟填充目标结构可以是双重的或四倍的旋转对称以允许某些制造或度量的优点。

    Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
    17.
    发明授权
    Multi-layer overlay metrology target and complimentary overlay metrology measurement systems 有权

    公开(公告)号：US10527954B2

    公开(公告)日：2020-01-07

    申请号：US15925325

    申请日：2018-03-19

    Applicant: KLA-Tencor Corporation

    Inventor： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

    IPC: G03F7/20

    Abstract: A system for measuring overlay from a multi-layer overlay target for use in imaging based metrology is disclosed. The system is configured for measuring overlay from a multi-layer overly target that includes three or more target structures, wherein a first target structure is disposed in a first process layer, a second target structure is disposed in a second process layer, and at least a third target structure is disposed in at least a third process layer. The system includes an illumination source configured to illuminate the target structures of the multi-layer overlay target, a detector configured to collect light reflected from the target structures, and one or more processors configured to execute a set of program instructions to determine overlay error between two or more structures based on the collected light from the plurality of targets.

    Topographic phase control for overlay measurement
    18.
    发明授权
    Topographic phase control for overlay measurement 有权

    公开(公告)号：US10520832B2

    公开(公告)日：2019-12-31

    申请号：US15114175

    申请日：2016-05-19

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Yuri Paskover ,  Amnon Manassen ,  Yoni Shalibo

    IPC: G03F7/20 ,  G02B7/38 ,  G06T7/80 ,  G02B27/32 ,  H04N5/232

    Abstract: Metrology tools and methods are provided, which estimate the effect of topographic phases corresponding to different diffraction orders, which result from light scattering on periodic targets, and adjust the measurement conditions to improve measurement accuracy. In imaging, overlay error magnification may be reduced by choosing appropriate measurement conditions based on analysis of contrast function behavior, changing illumination conditions (reducing spectrum width and illumination NA), using polarizing targets and/or optical systems, using multiple defocusing positions etc. On-the-fly calibration of measurement results may be carried out in imaging or scatterometry using additional measurements or additional target cells.

    Focus metrology and targets which utilize transformations based on aerial images of the targets
    19.
    发明授权
    Focus metrology and targets which utilize transformations based on aerial images of the targets 有权

    公开(公告)号：US10197922B2

    公开(公告)日：2019-02-05

    申请号：US15302052

    申请日：2016-08-04

    Applicant: KLA-Tencor Corporation

    Inventor： Nadav Gutman ,  Yoel Feler ,  Vladimir Levinski ,  Oded Kaminsky

    IPC: G03F7/20

    Abstract: Focus metrology methods and modules are provided, which use aerial-images-based transformations to share measurement information derived from multiple targets and/or to design additional targets to specified compliant targets, which enable simple adjustment of focus targets to changing production conditions. Methods comprise positioning two or more focus targets in each wafer field, conducting focus measurements of the targets, transforming the focus measurements into a single set of results for each field, using a transformation between the targets that is based on the aerial images thereof, and deriving focus results from the single sets of results; and possibly designing the focus targets from specified targets using aerial image parameters of the specified targets.

    Approaches in first order scatterometry overlay based on introduction of auxiliary electromagnetic fields
    20.
    发明授权
    Approaches in first order scatterometry overlay based on introduction of auxiliary electromagnetic fields 有权

    公开(公告)号：US10197389B2

    公开(公告)日：2019-02-05

    申请号：US15305166

    申请日：2016-08-18

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Yuri Paskover ,  Yuval Lubashevsky ,  Amnon Manassen

    IPC: G01B11/02 ,  G01B11/27 ,  G01B9/02 ,  G01N21/47 ,  G03F7/20

    Abstract: Metrology measurement methods and tools are provided, which illuminate a stationary diffractive target by a stationary illumination source, measure a signal composed of a sum of a zeroth order diffraction signal and a first order diffraction signal, repeat the measuring for a plurality of relations between the zeroth and the first diffraction signals, while maintaining the diffractive target and the illumination source stationary, and derive the first order diffraction signal from the measured sums. Illumination may be coherent and measurements may be in the pupil plane, or illumination may be incoherent and measurements may be in the field plane, in either case, partial overlapping of the zeroth and the first diffraction orders are measured. Illumination may be annular and the diffractive target may be a one cell SCOL target with periodic structures having different pitches to separate the overlap regions.

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