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公开(公告)号：US20240154584A1
公开(公告)日：2024-05-09
申请号：US18051999
申请日：2022-11-02
发明人： Timothy Canning , Helmut Brech
CPC分类号： H03F3/193 , H03F1/0222 , H03F1/301 , H03F2200/451
摘要： In accordance with an embodiment, an RF amplifier includes: a first amplifier including a first transistor coupled to a first supply node configured to provide a first supply voltage, the first transistor having a first device periphery; a second amplifier including a second transistor coupled to a second supply node configured to provide a second supply voltage higher than the first supply voltage, the second transistor having a second device periphery; and a combining network coupled to an output of the first amplifier, an output of the second amplifier, and an RF output port. The first device periphery, the first supply voltage, the second device periphery, and the second supply voltage are configured to maintain a junction temperature ratio of between 0.3 and 1.0, and the junction temperature ratio is a ratio of a temperature of the first amplifier to a temperature of the second amplifier.
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公开(公告)号：US20220319951A1
公开(公告)日：2022-10-06
申请号：US17703380
申请日：2022-03-24
发明人： Timothy Canning , Helmut Brech
IPC分类号： H01L23/367 , H01L23/538 , H01L23/00 , H01L25/065
摘要： A semiconductor package includes a mounting platform including an electrically insulating substrate and structured metallization layers, a semiconductor die mounted on an upper surface of the mounting platform, the semiconductor die including a first terminal and a second terminal, the first terminal disposed on a second surface of the semiconductor die that faces the mounting platform, the second terminal disposed on a first surface of the semiconductor die that faces away from the mounting platform, and a heat sink integrally formed in the mounting platform. The heat sink is directly underneath the semiconductor die and is thermally coupled to the semiconductor die. The heat sink extends from the upper surface of the mounting platform to a lower surface of the mounting platform. The heat sink includes one or more discrete metal blocks disposed within an opening formed in the electrically insulating substrate.
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公开(公告)号：US20220014156A1
公开(公告)日：2022-01-13
申请号：US17366359
申请日：2021-07-02
发明人： Timothy Canning , Helmut Brech
摘要： A device is provided including a power transistor at an output node, which is coupled to a load terminal of the power transistor. A DC feed path is also provided. One or more discrete capacitors are coupled between the DC feed path and a reference potential. A first capacitor of the one or more discrete capacitors which is closest to the output node is a trench capacitor device.
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公开(公告)号：US10141303B1
公开(公告)日：2018-11-27
申请号：US15709532
申请日：2017-09-20
发明人： Timothy Canning , Bjoern Herrmann , Richard Wilson
IPC分类号： H01L27/06 , H01L23/498 , H01L23/66 , H03F3/195 , H03F1/56
摘要： An RF semiconductor amplifier package includes a flange shaped body section, an electrically conductive die pad centrally located on the body section, and an electrically insulating window frame disposed on an upper surface of the body section. A first electrically conductive lead is disposed on the window frame adjacent to a first side of the die pad and extends away from the first side of the die pad towards a first edge side of the body section. A second electrically conductive lead is disposed on the window frame adjacent to a second side of the die pad and extends away from the second side of the die pad towards a second edge side of the body section. A first electrically conductive biasing strip is disposed on the window frame, continuously connected to the second lead, and extends along and a third side of the die pad.
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公开(公告)号：US20180269845A1
公开(公告)日：2018-09-20
申请号：US15460297
申请日：2017-03-16
发明人： Bayaner Arigong , Richard Wilson , Haedong Jang , Frank Trang , Timothy Canning , Rongguo Zhou
CPC分类号： H03H7/20 , H01L29/7816 , H03H7/18 , H03H7/19 , H03H11/20
摘要： A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.
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16.发明申请公开(公告)号：US20170133990A1
公开(公告)日：2017-05-11
申请号：US14934805
申请日：2015-11-06
CPC分类号： H03F3/211 , H03F1/0294 , H03F1/56 , H03F3/193 , H03F3/604 , H03F2200/451 , H03F2203/21103
摘要： Embodiments relate to outphasing amplifiers and amplification. One example system includes a signal splitter configured to receive an input signal and output a plurality of signals, wherein the signal splitter shifts each of the plurality of signals by a distinct phase based at least in part on a power of the input signal; a plurality of power amplifiers (PAs), each configured to amplify a distinct signal of the plurality of signals to generate a distinct amplified signal; a plurality of input matching networks, each coupled to a distinct PA of the plurality of PAs and configured to transform an input impedance of the coupled PA to an outphasing load condition based on the distinct signal the coupled PA is configured to amplify; and a combiner configured to combine the plurality of distinct amplified signals to generate an amplified input signal.
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