公开(公告)号：US11249150B2

公开(公告)日：2022-02-15

申请号：US16783041

申请日：2020-02-05

申请人： Institute of Semiconductors, Chinese Academy of Sciences

发明人： Kaiyou Wang ,  Ce Hu

IPC分类号： G01R33/09 ,  B82Y25/00 ,  H01L43/10

摘要： Exemplary embodiments of the present disclosure provide a spin valve and a spintronic device comprising the same. The spin valves may comprise two or more magnetic layers stacked in sequence, wherein any two adjacent magnetic layers among the two or more magnetic layers have different coercive forces, and at least one of the any two adjacent magnetic layers is a van der Waals magnetic layer, wherein the van der Waals magnetic layer refers to a magnetic layer made of a van der Waals magnetic material.

公开(公告)号：US10978121B2

公开(公告)日：2021-04-13

申请号：US16472117

申请日：2016-12-23

申请人： INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES

发明人： Kaiyou Wang ,  Meiyin Yang ,  Kaiming Cai

IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H03K19/18

摘要： A voltage controlled magnetic random memory unit, a memory, and a logic device thereof. The memory unit includes: a ferroelectric layer applied with a first positive or negative voltage to control a directional switching of magnetization; a spin-orbit coupling layer located above the ferroelectric layer and applied with a second voltage to produce a spin current in a direction perpendicular to the spin-orbit coupling layer; a first magnetic layer located above the spin-orbit coupling layer, wherein, the spin current induces a random up and down magnetic switching of the first magnetic layer. The spin current may induce a directional switching of the first magnetic layer in conjunction with the first voltage applied to the ferroelectric layer. The invention generates ferroelectric polarization by applying a voltage to both ends of the ferroelectric layer, thereby generating a non-uniform spin-orbit coupling effect, which can modulate the direction in which the current induces the magnetic switching of the magnetic film.