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公开(公告)号：US11076483B2
公开(公告)日：2021-07-27
申请号：US16721509
申请日：2019-12-19
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Kai-Hsiang Chuang , Chien-Chiang Hsu , Chien-Chung Hsu , Kuo-Chuang Chiu
Abstract: A direct bonded copper ceramic substrate is provided, which includes a nitride ceramic substrate, a first passivation layer, and a first copper layer. The first passivation layer includes aluminum oxide or silicon oxide doped with another metal. The other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof. The aluminum or silicon and the other metal have a weight ratio of 60:40 to 99.5:0.5. The first passivation layer is disposed between the top surface of the nitride ceramic substrate and the first copper layer.
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公开(公告)号：US20180100820A1
公开(公告)日：2018-04-12
申请号：US15835467
申请日：2017-12-08
Applicant: Industrial Technology Research Institute
Inventor： Tzu-Yu Liu , Kuo-Chuang Chiu , Hung Tien , Yeh-Chyang Huang
CPC classification number: G01N27/026 , G01N33/1886
Abstract: A urea concentration identification method is provided. By providing an identical sine-wave AC signal to each of the urea concentration identification devices placed in urea solutions of different concentrations, different impedance values are output by the urea concentration identification devices since the urea solutions of different concentrations have different electrical interactions with the electrodes of the urea concentration identification device. Differences of the impedance output by the urea concentration identification device function as a data set for determining the concentration of the urea solution to be determined.
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公开(公告)号：US20160084780A1
公开(公告)日：2016-03-24
申请号：US14583212
申请日：2014-12-26
Inventor： Tzu-Yu Liu , Kuo-Chuang Chiu , Hung Tien , Shiou-Lan Hu , Yeh-Chyang Huang
IPC: G01N25/00
CPC classification number: G01N25/00 , F01N3/2066 , F01N2610/02 , F01N2610/148 , F01N2900/1818 , G01N25/18 , Y02T10/24
Abstract: A liquid concentration detecting device including a first substrate, a first temperature sensing element and a concentration sensor is provided. The first temperature sensing element and the concentration sensor are respectively disposed on opposite first surface and second surface of the first substrate. The concentration sensor includes a second substrate, a porous element, a heating element and a second temperature sensing element. The second substrate is disposed above the second surface. A portion of the liquid flows into the concentration sensor through the porous element, and the heating element heats the liquid in the concentration sensor. The second temperature sensing element measures the temperature variation of the liquid in the concentration sensor. The measured temperature and the temperature variation are compared to deduce a concentration of the liquid under detection.
Abstract translation: 提供了包括第一基板，第一温度感测元件和浓度传感器的液体浓度检测装置。 第一温度感测元件和浓度传感器分别设置在第一基板的相对的第一表面和第二表面上。 浓度传感器包括第二基板，多孔元件，加热元件和第二温度感测元件。 第二基板设置在第二表面上方。 一部分液体通过多孔元件流入浓度传感器，加热元件加热浓度传感器中的液体。 第二温度感测元件测量浓度传感器中液体的温度变化。 将测量的温度和温度变化进行比较，以推断检测液体的浓度。
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公开(公告)号：US08927986B2
公开(公告)日：2015-01-06
申请号：US14039188
申请日：2013-09-27
Applicant: Industrial Technology Research Institute
Inventor： Tzu-Chi Chou , Kuo-Chuang Chiu , Show-Ju Peng , Shan-Haw Chiou , Yu-Tsz Shie
CPC classification number: H01L29/12 , C01G9/02 , C01G15/006 , C01P2002/50 , C01P2002/52 , C04B35/453 , C04B35/624 , C04B2235/3206 , C04B2235/3208 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/449 , H01L29/26 , H01L29/7869 , H01L33/26
Abstract: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1−xGa1−yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0
Abstract translation: 本公开提供了一种p型金属氧化物半导体材料。 p型金属氧化物半导体材料具有下式：In1-xGa1-yMx + yZnO4 + m，其中M是Ca，Mg或Cu，0
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