公开(公告)号：US20220179300A1

公开(公告)日：2022-06-09

申请号：US17436506

申请日：2020-02-20

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Ryo OHKUBO ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/24 ,  H01L21/027

Abstract: A mask blank has a structure in which a pattern-forming thin film and a hard mask film are formed on a substrate in this order. The hard mask film is made of a material containing silicon, oxygen, and nitrogen. The hard mask film has a nitrogen content of at least 2% and at most 18%. An Si2p narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of at least 103 eV.

公开(公告)号：US20220035235A1

公开(公告)日：2022-02-03

申请号：US17275628

申请日：2019-09-10

Applicant: HOYA CORPORATION

Inventor： Ryo OHKUBO ,  Hitoshi MAEDA ,  Keishi AKIYAMA ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/34 ,  G03F1/54 ,  C23C14/08 ,  C23C14/34 ,  H01L21/027

Abstract: Provided is a mask blank including an etching stopper film. The mask blank has a structure where an etching stopper film and a thin film for pattern formation are stacked in this order on a transparent substrate, featured in that the thin film includes a material containing silicon, the etching stopper film includes a material containing hafnium, aluminum, and oxygen, and a ratio by atom % of an amount of hafnium to a total amount of hafnium and aluminum in the etching stopper film is 0.86 or less.

公开(公告)号：US20200064727A1

公开(公告)日：2020-02-27

申请号：US16671065

申请日：2019-10-31

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Kazuya SAKAI

IPC: G03F1/32 ,  H01L21/027 ,  G03F7/20 ,  G03F1/26

Abstract: A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a predetermined transmittance to ArF exposure light and being configured to shift a phase of ArF exposure light transmitted therethrough, wherein the phase-shift film comprises a nitrogen-containing layer that is formed from a material containing silicon and nitrogen and does not contain a transition metal, and wherein a content of oxygen in the nitrogen-containing layer, when measured by X-ray photoemission spectroscopy, is below a detection limit.

公开(公告)号：US20200064725A1

公开(公告)日：2020-02-27

申请号：US16488901

申请日：2018-01-24

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO

IPC: G03F1/24 ,  H01L21/033

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

公开(公告)号：US20180259841A1

公开(公告)日：2018-09-13

申请号：US15571131

申请日：2016-05-10

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Takenori KAJIWARA ,  Ryo OHKUBO

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/80 ,  G03F1/74 ,  G03F1/78 ,  G03F1/50

CPC classification number: G03F1/32 ,  G03F1/50 ,  G03F1/54 ,  G03F1/74 ,  G03F1/78 ,  G03F1/80

Abstract: A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.

公开(公告)号：US20180210331A1

公开(公告)日：2018-07-26

申请号：US15743783

申请日：2016-07-11

Applicant: HOYA CORPORATION

Inventor： Takenori KAJIWARA ,  Hiroaki SHISHIDO ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/00 ,  G03F1/80 ,  G03F1/82 ,  H01L21/033

CPC classification number: G03F1/32 ,  G03F1/0076 ,  G03F1/54 ,  G03F1/58 ,  G03F1/80 ,  G03F1/82 ,  H01L21/0337

Abstract: An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side. The lower layer has a refractive index n at a wavelength of the exposure light that is smaller than that of the transparent substrate. The upper layer has a refractive index n at the wavelength of the exposure light that is larger than that of the transparent substrate. The lower layer has an extinction coefficient k at the wavelength of the exposure light that is larger than that of the upper layer. The upper layer has a thickness that is larger than that of the lower layer.

公开(公告)号：US20180143528A1

公开(公告)日：2018-05-24

申请号：US15501659

申请日：2016-08-02

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Takenori KAJIWARA

IPC: G03F1/32 ,  C23C14/00 ,  C23C14/34 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F1/32 ,  C23C14/06 ,  C23C14/0652 ,  G03F1/26 ,  G03F7/70 ,  H01L21/0274

Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness.The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.8 and extinction coefficient k of 2.0 or more; the upper layer has refractive index n of 2.3 or more and extinction coefficient k of 1.0 or less; and the upper layer has more thickness than the lower layer.

公开(公告)号：US20170068155A1

公开(公告)日：2017-03-09

申请号：US15122486

申请日：2015-02-24

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Osamu NOZAWA ,  Takashi UCHIDA

IPC: G03F1/30 ,  C23C14/06 ,  C23C14/58 ,  G03F1/58 ,  G03F1/80 ,  G03F7/20 ,  G03F7/34 ,  C23C14/34 ,  H01L21/033

CPC classification number: G03F1/30 ,  C23C14/0664 ,  C23C14/0676 ,  C23C14/34 ,  C23C14/5873 ,  G03F1/58 ,  G03F1/80 ,  G03F7/2006 ,  G03F7/34 ,  H01L21/0332

Abstract: A mask blank having a structure in which, on a transparent substrate, a light shielding film and a hard mask film are laminated in the stated order from the transparent substrate side. The hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure of three layers wherein a lower layer, an intermediate layer, and an upper layer are laminated in the stated order from the transparent substrate side. The upper layer has a lowest content of chromium in the light shielding film, the intermediate layer has a highest content of chromium in the light shielding film. It contains at least one metallic element selected from indium, tin, and molybdenum.

Abstract translation: 从透明基板侧按顺序层叠透明基板上的遮光膜和硬掩模膜的结构的掩模坯料。 硬掩模膜由含有至少一种选自硅和钽的元素的材料形成，并且遮光膜由含铬的材料形成。 掩模毛坯具有三层结构，其中下层，中间层和上层以透明基板侧的顺序层叠。 上层在遮光膜中的铬含量最低，中间层在遮光膜中的铬含量最高。 它含有至少一种选自铟，锡和钼的金属元素。

公开(公告)号：US20160187769A1

公开(公告)日：2016-06-30

申请号：US14910854

申请日：2014-09-05

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO ,  Yasushi OKUBO

IPC: G03F1/42 ,  G03F7/20 ,  G03F1/48

CPC classification number: G03F1/42 ,  C23C14/06 ,  C23C14/0641 ,  C23C14/3414 ,  G03F1/32 ,  G03F1/48 ,  G03F1/80 ,  G03F7/20

Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask. The mask blank 100 comprises a structure in which the light semitransmissive film 2, etching stopper film 3, light shielding film 4, and etching mask film 5 are laminated in said order on the transparent substrate 1; the light semitransmissive film 2 and light shielding film 3 are made of a material which can be dry etched with a fluorine-based gas; the etching stopper film and etching mask film are made of a material containing chromium; and when a thickness of the etching stopper film is Ds, an etching rate of the etching stopper film with respect to an oxygen-containing chlorine-based gas is Vs, a thickness of the etching mask film is Dm, and an etching rate of the etching mask film with respect to the oxygen-containing chlorine-based gas is Vm, a relationship: (Dm/Vm)>(Ds/Vs) is satisfied.

Abstract translation: 提供掩模坯料，通过该掩模坯料，可以在透明基板和光半透射膜，蚀刻停止膜和遮光膜的层压结构之间形成对准标记，在转印掩模的制造期间。 掩模坯料100包括在透明基板1上以顺序层叠光半透射膜2，蚀刻阻挡膜3，遮光膜4和蚀刻掩模膜5的结构， 轻半透射膜2和遮光膜3由可以用氟基气体进行干蚀刻的材料制成; 蚀刻阻挡膜和蚀刻掩模膜由含铬的材料制成; 当蚀刻阻挡膜的厚度为Ds时，蚀刻阻挡膜相对于含氧氯系气体的蚀刻速度为Vs，蚀刻掩模膜的厚度为Dm，蚀刻速度为 相对于含氧氯系气体的蚀刻掩模膜为Vm，满足关系式（Dm / Vm）>（Ds / Vs）。

公开(公告)号：US20140322634A1

公开(公告)日：2014-10-30

申请号：US14328201

申请日：2014-07-10

Applicant: HOYA CORPORATION

Inventor： Atsushi KOMINATO ,  Osamu NOZAWA ,  Hiroyuki IWASHITA ,  Masahiro HASHIMOTO

IPC: G03F1/50

CPC classification number: G03F1/50 ,  G03F1/58

Abstract: A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN≧−0.00526CMo2−0.640CMo+26.624.

Abstract translation: 用于制造适于施加有形成为转印图案的透明基板和遮光膜的ArF准分子激光曝光光的转印掩模的掩模坯料。 遮光膜具有至少两层，一层主要由含有过渡金属，硅和氮的第一材料构成的下层，另一层是主要由含有过渡金属的第二材料构成的上层，硅 ，和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标物上的蚀刻中，下层的第一蚀刻速率与上层的第二蚀刻速率之比为1.0以上且5.0以下 一部分。 另一比例满足下列公式CN≧-0.00526CMo2-0.640CMo + 26.624。