Invention Application
- Patent Title: MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US16488901Application Date: 2018-01-24
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Publication No.: US20200064725A1Publication Date: 2020-02-27
- Inventor: Osamu NOZAWA , Ryo OHKUBO , Hiroaki SHISHIDO
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2017-034706 20170227
- International Application: PCT/JP2018/002072 WO 20180124
- Main IPC: G03F1/24
- IPC: G03F1/24 ; H01L21/033

Abstract:
A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.
Public/Granted literature
- US11281089B2 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device Public/Granted day:2022-03-22
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