Abstract:
Provided is a charged particle beam device which can specify a position of an initial core with high accuracy even when fine line and space patterns are formed by an SADP in plural times. The charged particle beam device includes a detector (810) which detects secondary charged particles discharged from a sample (807) when a charged particle beam is emitted to the sample having a plurality of patterns of line shape, a display unit (817) which displays image data of a surface of the sample on the basis of a signal of the secondary charged particles, a calculation unit (812) which calculates an LER value with respect to the plurality of the patterns of line shape from the image data, and a determination unit (816) which compares the values to determine a position of the initial core.
Abstract:
The present invention pertains to a method and device for quantitatively evaluating the degree and characteristics of wiggling, which is a phenomenon that occurs in electronic device fabrication processes and consists of the deformation in the same shape of the left and right edges of fine line patterns, and takes advantage of the fact that this wiggling is included in measured values for line edge variation but not line width variation by acquiring the differences between these values. Further, the present invention is configured so as to calculate line center positions and use the distribution of the deviation from the average line center position as an indicator. Additionally, the present invention is configured to quantify wiggling characteristics by outputting a coefficient of wiggling correlation between lines or a wiggling component synchronized between lines as an indicator.
Abstract:
An error of an outline point due to a brightness fluctuation cannot be corrected by a simple method such as a method of adding a certain amount of offset. However, in recent years as the miniaturization of the pattern represented by a resist pattern has progressed, it has been difficult to appropriately determine a region that serves as a reference. An outline of the resist pattern is extracted from an image of the resist pattern obtained by a charged particle beam apparatus in consideration of influence of the brightness fluctuation. That is, a plurality of brightness profiles in the vicinity of edge points configuring the outline are obtained and an evaluation value of a shape of the brightness profile in the vicinity of a specific edge is obtained based on the plurality of brightness profiles, and the outline of a specific edge point is corrected, based on the evaluation value.
Abstract:
The objective of the invention is to provide a measuring method that can determine pattern contours and dimensions with high precision even if an object to be measured shrinks due to electron beam radiations. In order to achieve this objective, a method, which performs measurements by irradiating an electron beam onto a sample having a pattern formed on a primary coating thereof, prepares an SEM image and contour of the pattern (S201, S202), material parameters of the pattern part and primary coating part of the sample (S203, S204), and a beam condition in irradiating the electron beam onto the sample (S205), and uses these prepared things to calculate a pattern shape or dimensions before the irradiation of the electron beam (S206).
Abstract:
In order that a displacement between patterns of different heights, formed on a sample in a plurality of different pattern-forming steps, can be measured at fixed throughput and with high accuracy, correspondence between parameters of lenses and beam deflector of an electron optical system and an angle of incidence of a beam upon the sample is recorded as data, then a correction value for the amount of displacement or edge positions is calculated, and a true amount of displacement is calculated from the correction value and an image under observation.