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公开(公告)号：US20190252856A1
公开(公告)日：2019-08-15
申请号：US16292531
申请日：2019-03-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kazuyoshi HIROSE , Yoshitaka KUROSAKA , Takahiro SUGIYAMA , Yuu TAKIGUCHI , Yoshiro NOMOTO
Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.
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公开(公告)号：US20220120612A1
公开(公告)日：2022-04-21
申请号：US17495995
申请日：2021-10-07
Applicant: HAMAMATSU PHOTONICS K.K. , The University of Tokyo
Inventor： Yoshiro NOMOTO , Takuo TANEMURA
Abstract: An optical property evaluation apparatus evaluates an optical property of an evaluation object, and includes a light source, a polarization beam splitter, a polarization adjuster, a first detector, a second detector, and an analyzer. The analyzer obtains a reflectance when linearly polarized light in a specific direction is incident on the evaluation object based on the detection result by the first detector when the light with which the evaluation object is irradiated is set to be the linearly polarized light in the specific direction. The analyzer obtains a phase property at the reflection of the evaluation object based on the detection result by the first detector or the second detector when the light with which the evaluation object is irradiated is set to have a polarization state different from the linearly polarized light in the specific direction, and a Jones matrix.
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公开(公告)号：US20210249842A1
公开(公告)日：2021-08-12
申请号：US16972825
申请日：2019-06-04
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kazuyoshi HIROSE , Takahiro SUGIYAMA , Yuu TAKIGUCHI , Yoshiro NOMOTO , Soh UENOYAMA
Abstract: A light emission device of one embodiment reduces zero-order light included in output of an S-iPM laser. The light emission device includes a light emission unit and a phase modulation layer. The phase modulation layer has a base layer and modified refractive index regions each including modified refractive index elements. In each unit constituent region centered on a lattice point of an imaginary square lattice set on the phase modulation layer, the distance from the corresponding lattice point to each of the centers of gravity of the modified refractive index elements is greater than 0.30 times and is not greater than 0.50 times of the lattice spacing. In addition, the distance from the corresponding lattice point to the center of gravity of the modified refractive index elements as a whole is greater than 0 and is not greater than 0.30 times of the lattice spacing.
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公开(公告)号：US20180026419A1
公开(公告)日：2018-01-25
申请号：US15656096
申请日：2017-07-21
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kazuyoshi HIROSE , Yoshitaka KUROSAKA , Takahiro SUGIYAMA , Yuu TAKIGUCHI , Yoshiro NOMOTO
CPC classification number: H01S5/0085 , H01S5/0265 , H01S5/183 , H01S5/18338 , H01S5/18363 , H01S5/18386 , H01S5/18391 , H01S5/18394 , H01S5/187
Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.
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公开(公告)号：US20180006426A1
公开(公告)日：2018-01-04
申请号：US15541515
申请日：2016-01-07
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yuu TAKIGUCHI , Kazuyoshi HIROSE , Yoshiro NOMOTO , Takahiro SUGIYAMA , Yoshitaka KUROSAKA
IPC: H01S5/02 , G02B27/10 , G02F1/1335 , H01S5/18
CPC classification number: H01S5/02 , G02B27/1026 , G02B27/22 , G02B27/26 , G02F1/133504 , G02F1/133553 , G02F2001/133638 , H01S3/1065 , H01S5/02236 , H01S5/026 , H01S5/0425 , H01S5/0624 , H01S5/06243 , H01S5/105 , H01S5/14 , H01S5/18 , H01S5/18302 , H01S5/18361 , H01S5/34313 , H01S5/4093 , H01S5/423 , H01S2301/20
Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.
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Patent Agency Ranking
公开(公告)号：US20160064894A1
公开(公告)日：2016-03-03
申请号：US14786217
申请日：2014-04-25
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yuu TAKIGUCHI , Yoshiro NOMOTO
IPC: H01S5/026 , G02F1/1343 , H01S5/187
CPC classification number: H01S5/0265 , G02F1/133603 , G02F1/133615 , G02F1/13439 , H01S5/105 , H01S5/18 , H01S5/183 , H01S5/18302 , H01S5/18386 , H01S5/187
Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a transparent common electrode 25, a plurality of transparent pixel electrodes 21, a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated by the spatial light modulator SLM, passes therethrough, and is output to the outside.
Abstract translation: 该半导体激光器件包括半导体激光器芯片和与半导体激光器芯片光学连接的空间光调制器SLM。 半导体激光器芯片LDC包括有源层4，夹持有源层4的一对覆盖层2和7以及与有源层4光学连接的衍射光栅层6.空间光调制器SLM包括透明公共端 电极25，多个透明像素电极21，布置在公共电极25和像素电极21之间的液晶层LC。沿着衍射光栅层6的厚度方向输出的激光束被空间光调制器SLM 通过，输出到外部。
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公开(公告)号：US20250110346A1
公开(公告)日：2025-04-03
申请号：US18832309
申请日：2023-01-26
Applicant: HAMAMATSU PHOTONICS K.K. , The University of Tokyo
Inventor： Go SOMA , Yoshiro NOMOTO , Yoshiaki NAKANO , Takuo TANEMURA
Abstract: A polarization splitting device includes a substrate, and a polarization splitting layer having a structure element pattern including a plurality of structure elements each having two-fold rotational symmetry, and formed on an upper surface of the substrate. The polarization splitting layer splits first to sixth polarization components included in object light, and focuses respectively at first to sixth focal positions on a focal plane. The structure element pattern includes a first structure element pattern for focusing the first and second polarization components, a second structure element pattern for focusing the third and fourth polarization components, and a third structure element pattern for focusing the fifth and sixth polarization components, and a pattern constituted by a first structure element, a second structure element, and a third structure element is set as a unit pattern, and a plurality of unit patterns are two-dimensionally arranged.
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18.发明申请公开(公告)号：US20220278505A1
公开(公告)日：2022-09-01
申请号：US17749893
申请日：2022-05-20
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Takahiro SUGIYAMA , Yuu TAKIGUCHI , Yoshitaka KUROSAKA , Kazuyoshi HIROSE , Yoshiro NOMOTO , Soh UENOYAMA
Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.
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公开(公告)号：US20220019096A1
公开(公告)日：2022-01-20
申请号：US17311022
申请日：2019-12-13
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yoshiro NOMOTO
Abstract: A light modulator of to this embodiment enables high-speed modulation to an SLM using a liquid crystal. The light modulator comprises refractive index regions arranged in a first direction on a reference plane, a region surrounding each refractive index regions and having a refractive index lower than that of each refractive index region, a first conductive film, and a second conductive film. The first conductive film is provided on any one of a pair of side surfaces arranged in the first direction in at least one refractive index region selected from the refractive index regions and belonging to a first group. The second conductive film is provided on any one of the pair of side surfaces so as not to overlap with the first conductive film in at least one refractive index region selected from the refractive index regions and belonging to a second group.
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公开(公告)号：US20180074226A1
公开(公告)日：2018-03-15
申请号：US15701537
申请日：2017-09-12
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yoshiro NOMOTO , Yoshitaka KUROSAKA , Kazuyoshi HIROSE , Takahiro SUGIYAMA , Soh UENOYAMA
CPC classification number: G02B1/002 , G02B5/008 , G02B2207/101 , G02F1/19 , G02F2202/30
Abstract: A metasurface includes a substrate including a light input surface into which input light is input and a light output surface facing the light input surface, and a plurality of V-shaped antenna elements disposed on the light output surface of the substrate and including a first arm and a second arm continuing on one end of the first arm. The each of the V-shaped antenna elements has a thickness in a range of 100 nm to 400 nm.
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