公开(公告)号：US10068801B2

公开(公告)日：2018-09-04

申请号：US15617431

申请日：2017-06-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/768 ,  B23K26/00 ,  B28D5/00 ,  H01L21/304 ,  H01L23/00 ,  B23K26/0622 ,  B23K26/40 ,  H01L21/268 ,  H01L21/683 ,  H01L23/544 ,  H01L21/306 ,  B23K103/00

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US09543256B2

公开(公告)日：2017-01-10

申请号：US15226662

申请日：2016-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L23/00 ,  H01L21/78 ,  H01L23/544 ,  H01L21/268 ,  H01L21/304 ,  H01L21/683

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US09543207B2

公开(公告)日：2017-01-10

申请号：US15226417

申请日：2016-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L23/00 ,  H01L21/306 ,  H01L21/683

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract translation: 一种衬底分割方法，其可以在防止发生破裂和破裂的同时使衬底细分割。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，从而形成包含熔融处理区域的改质区域 在半导体衬底1内进行多光子吸收，并且使包含熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

公开(公告)号：US09385151B2

公开(公告)日：2016-07-05

申请号：US14627238

申请日：2015-02-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroshi Oguri ,  Yoshitaka Ishikawa ,  Akira Sakamoto ,  Tomoya Taguchi ,  Yoshimaro Fujii

IPC: H01L27/148 ,  H01L29/768 ,  H01L27/146 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/18 ,  Y02E10/50

Abstract: A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions.