公开(公告)号：US20210159351A1

公开(公告)日：2021-05-27

申请号：US17046864

申请日：2019-04-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tomoya TAGUCHI ,  Yuki YOSHIDA ,  Katsumi SHIBAYAMA

IPC: H01L31/0352 ,  H01L31/102 ,  H01L31/12

Abstract: A semiconductor substrate includes first and second main surfaces opposing each other. The semiconductor substrate includes second semiconductor regions in a side of the second main surface. Each of the second semiconductor regions includes a first region including a textured surface, and a second region where a bump electrode is disposed. The second semiconductor regions are two-dimensionally distributed in a first direction and a second direction orthogonal to each other when viewed in a direction orthogonal to the semiconductor substrate. The first region and the second region are adjacent to each other in a direction crossing the first direction and the second direction. The textured surface of the first region is located toward the first main surface in comparison to the surface of the second region in a thickness direction of the semiconductor substrate. The first main surface is a light incident surface of the semiconductor substrate.

公开(公告)号：US20210053157A1

公开(公告)日：2021-02-25

申请号：US16605292

申请日：2018-04-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi SAKAMOTO ,  Takafumi OGIWARA ,  Tomoya TAGUCHI

IPC: B23K26/364 ,  B23K26/38 ,  B23K26/53 ,  H01L21/3065 ,  H01L21/78 ,  H01L21/311

Abstract: An object cutting method includes: a first step of preparing an object including a single crystal silicon substrate and a functional device layer provided on a first main surface side; a second step of irradiating the object with laser light to form at least one row of modified regions in the single crystal silicon substrate and to form a fracture in the object so as to extend between the at least one row of modified regions and a second main surface of the object; and a third step of performing dry etching on the object from the second main surface side to form a groove opening to the second main surface. In the third step, in a state in which an etching protection layer having a gas passing region formed, is formed on the second main surface, the dry etching is performed by using a xenon difluoride gas.

公开(公告)号：US20140061840A1

公开(公告)日：2014-03-06

申请号：US14012273

申请日：2013-08-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroshi OGURI ,  Yoshitaka ISHIKAWA ,  Akira SAKAMOTO ,  Tomoya TAGUCHI ,  Yoshimaro FUJII

IPC: H01L31/0232

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/18 ,  Y02E10/50

Abstract: A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions

Abstract translation: 边缘照明型光电二极管的制造方法具有：在半导体衬底中的器件形成区域的每一个中形成第一导电类型的杂质掺杂层的工序; 在每个器件形成区域中形成第二导电类型的杂质掺杂层的工艺; 在相邻的器件形成区域的边界的位置处，通过蚀刻从主表面形成在半导体衬底的厚度方向上延伸的沟槽的工艺，以暴露器件形成区域的侧面; 在器件形成区域的露出侧面上形成绝缘膜的工序; 在半导体衬底的主表面侧上形成用于每个对应的杂质掺杂层的电极的工艺; 以及将半导体衬底分离成单个器件形成区域的过程