Photodiode array
    12.
    发明授权
    Photodiode array 有权
    光电二极管阵列

    公开(公告)号:US08754502B2

    公开(公告)日:2014-06-17

    申请号:US13710845

    申请日:2012-12-11

    CPC classification number: H01L27/1446 H01L31/107

    Abstract: Each light detecting unit includes a semiconductor region that outputs a carrier, and a surface electrode. In a photodiode array, a read wire is positioned between neighboring avalanche photodiodes. When a plane including a surface of the semiconductor region is set as a reference plane, a distance tb from the reference plane to the read wire is larger than a distance to from the reference plane to the surface electrode.

    Abstract translation: 每个光检测单元包括输出载体的半导体区域和表面电极。 在光电二极管阵列中,读线被定位在相邻的雪崩光电二极管之间。 当将包括半导体区域的表面的平面设定为基准面时,从基准面到读取线的距离tb大于从基准面到表面电极的距离。

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