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    Method of manufacturing semiconductor optoelectronic device
    11.
    发明授权
    Method of manufacturing semiconductor optoelectronic device 有权
    制造半导体光电器件的方法

    公开(公告)号：US09293634B2

    公开(公告)日：2016-03-22

    申请号：US14328020

    申请日：2014-07-10

    申请人： Epistar Corporation

    发明人： Hsin-Ying Wang ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Chi-Hsing Chen ,  Hsiang-Ling Chang

    IPC分类号： H01L27/00 ,  H01L31/18 ,  H01L33/00 ,  H01L33/42 ,  H01L27/15 ,  H01L27/146

    CPC分类号： H01L31/18 ,  H01L27/14636 ,  H01L27/156 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/42

    摘要： A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive layer, wherein the first electrode is connected with the transparent conductive layer by an area excluding the directly contacting part and the directly contacting corresponding part.

    摘要翻译： 半导体光电子器件包括操作衬底; 设置在所述操作基板上的半导体外延堆叠单元，包括设置在所述操作基板上的具有第一导电性的第一半导体材料层和设置在所述第一半导体材料层上的具有第二导电性的第二半导体材料层; 设置在所述第二半导体材料层上的透明导电层，其中所述透明导电层包括第一表面，设置在所述第一表面上并与所述第二半导体材料层直接接触的直接接触部分，所述第二表面基本上平行于所述第一表面 以及设置在与直接接触部分相对应的第二表面上的直接接触的对应部件; 以及第一电极，其设置在所述操作基板上并且通过所述透明导电层与所述半导体外延层电连接，其中所述第一电极通过除了直接接触部分和直接接触的对应部分之外的区域与所述透明导电层连接。

    Light-emitting device with a plurality of electrodes on a semiconductor stack
    13.
    发明授权
    Light-emitting device with a plurality of electrodes on a semiconductor stack 有权

    公开(公告)号：US11621374B2

    公开(公告)日：2023-04-04

    申请号：US17321078

    申请日：2021-05-14

    申请人： EPISTAR CORPORATION

    发明人： Chao-Hsing Chen ,  Cheng-Lin Lu ,  Chih-Hao Chen ,  Chi-Shiang Hsu ,  I-Lun Ma ,  Meng-Hsiang Hong ,  Hsin-Ying Wang ,  Kuo-Ching Hung ,  Yi-Hung Lin

    IPC分类号： H01L33/00 ,  H01L31/0232 ,  H01L21/00 ,  H01L33/38 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/075 ,  H01L33/36

    摘要： A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

    Light-emitting device with a plurality of electrodes on a semiconductor stack
    14.
    发明授权
    Light-emitting device with a plurality of electrodes on a semiconductor stack 有权

    公开(公告)号：US11038085B2

    公开(公告)日：2021-06-15

    申请号：US16529370

    申请日：2019-08-01

    申请人： EPISTAR CORPORATION

    发明人： Chao-Hsing Chen ,  Cheng-Lin Lu ,  Chih-Hao Chen ,  Chi-Shiang Hsu ,  I-Lun Ma ,  Meng-Hsiang Hong ,  Hsin-Ying Wang ,  Kuo-Ching Hung ,  Yi-Hung Lin

    IPC分类号： H01L33/00 ,  H01L31/0232 ,  H01L21/00 ,  H01L33/38 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24

    摘要： A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

    Light-emitting device
    16.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10056525B2

    公开(公告)日：2018-08-21

    申请号：US15692759

    申请日：2017-08-31

    申请人： EPISTAR CORPORATION

    发明人： Chien-Kai Chung ,  Po-Shun Chiu ,  Hsin-Ying Wang ,  De-Shan Kuo ,  Tsun-Kai Ko ,  Yu-Ting Huang

    IPC分类号： H01L33/00 ,  H01L33/22 ,  H01L33/20 ,  H01L33/38 ,  H01L33/14

    CPC分类号： H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382

    摘要： A light-emitting device includes: a rectangular shape with a 1st side, a 2nd side opposite to the 1st side, and a 3rd side connecting the 1st and the 2nd sides; a first electrode pad formed adjacent to the 3rd side; a second electrode pad formed adjacent to the 2nd side; a first extension electrode, extending from the first electrode pad in a direction away from the 3rd side and bended toward the 2nd side; and a second extension electrode, including a first and a second branches respectively extending from the second electrode pad; wherein a distance between the first electrode pad and the 3rd side is smaller than a distance between the second electrode pad and the 3rd side; wherein an end portion of the first branch includes a first arc bending to the 3rd side and a minimum distance between the first branch and the 1st side is smaller than a minimum distance between the second branch and the 1st side.

    Method of forming light-emitting diode
    19.
    发明授权
    Method of forming light-emitting diode 有权
    形成发光二极管的方法

    公开(公告)号：US09048345B2

    公开(公告)日：2015-06-02

    申请号：US14196708

    申请日：2014-03-04

    申请人： EPISTAR CORPORATION

    发明人： Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Chi-Hsing Chen ,  Hsin-Ying Wang

    IPC分类号： H01L33/00 ,  H01L21/02

    CPC分类号： H01L33/005 ,  H01L21/02436 ,  H01L21/02664 ,  H01L33/0079

    摘要： A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the epitaxial layer by selectively etching the sacrificial layer.

    摘要翻译： 形成发光二极管的方法包括：提供具有穿过基板的一个或多个第一开口的基板; 在所述基板上形成牺牲层; 在牺牲层上形成外延层; 将支撑衬底与所述外延层连接; 以及通过选择性蚀刻牺牲层将衬底与外延层分离。

    Light-emitting diode device
    20.
    外观设计
    Light-emitting diode device 有权

    公开(公告)号：USD1012330S1

    公开(公告)日：2024-01-23

    申请号：US29758799

    申请日：2020-11-18

    申请人： EPISTAR CORPORATION

    设计人： Chen Ou ,  Li-Ming Chang ,  Chien-Fu Shen ,  Hsin-Ying Wang

    摘要： FIG. 1 is a perspective view of a light-emitting diode device showing a first embodiment of our new design;
    FIG. 2 is a front elevational view thereof;
    FIG. 3 is a rear elevational view thereof;
    FIG. 4 is a left side elevational view thereof;
    FIG. 5 is a right side elevational view thereof;
    FIG. 6 is a top plan view thereof;
    FIG. 7 is a bottom plan view thereof;
    FIG. 8 is a perspective view of a light-emitting diode device showing a second embodiment of our new design;
    FIG. 9 is a front elevational view thereof;
    FIG. 10 is a rear elevational view thereof;
    FIG. 11 is a left side view thereof;
    FIG. 12 is a right side view thereof;
    FIG. 13 is a top plan view thereof;
    FIG. 14 is a bottom plan view thereof;
    FIG. 15 is a perspective view of a light-emitting diode device showing a third embodiment of our new design;
    FIG. 16 is a front elevational view thereof;
    FIG. 17 is a rear elevational view thereof;
    FIG. 18 is a left side view thereof;
    FIG. 19 is a right side view thereof;
    FIG. 20 is a top plan view thereof;
    FIG. 21 is a bottom plan view thereof;
    FIG. 22 is a perspective view of a light-emitting diode device showing a fourth embodiment of our new design;
    FIG. 23 is a front elevational view thereof;
    FIG. 24 is a rear elevational view thereof;
    FIG. 25 is a left side view thereof;
    FIG. 26 is a right side view thereof;
    FIG. 27 is a top plan view thereof; and,
    FIG. 28 is a bottom plan view thereof.
    The broken lines illustrate portions of the light-emitting diode device and form no part of the claimed design.