公开(公告)号：US20150187599A1

公开(公告)日：2015-07-02

申请号：US14310784

申请日：2014-06-20

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Choon KO ,  Jae Kyoung MUN ,  Woojin CHANG ,  Sung-Bum BAE ,  Young Rak PARK ,  Chi Hoon JUN ,  Seok-Hwan MOON ,  Woo-Young JANG ,  Jeong-Jin KIM ,  Hyungyu JANG ,  Je Ho NA ,  Eun Soo NAM

IPC: H01L21/321 ,  H01L21/283 ,  H01L21/02

CPC classification number: H01L21/3212 ,  H01L21/0254 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786

Abstract: Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.

Abstract translation: 提供一种制造氮化物半导体器件的方法。 该方法包括在生长衬底上形成多个电极，在其上依次层叠有第一和第二氮化物半导体层，分别在多个电极上形成上部金属层，去除生长衬底以暴露第一氮化物半导体层的下表面 并且在第一氮化物半导体层的暴露的下表面上顺序地形成第三氮化物半导体层和下金属层。

公开(公告)号：US20140225121A1

公开(公告)日：2014-08-14

申请号：US14143716

申请日：2013-12-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sung-Bum BAE ,  Sung Bock KIM ,  Eun Soo NAM

IPC: H01L21/02 ,  H01L29/20

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0262 ,  H01L29/2003

Abstract: Provided are an aluminum gallium nitride template and a fabrication method thereof. The fabrication method includes forming an aluminum nitride (AlN) layer on a substrate, forming a first aluminum gallium nitride (AlxGa1-xN) layer on the aluminum nitride (AlN) layer, forming a second aluminum gallium nitride (AlyGa1-yN) layer on the first aluminum gallium nitride (AlxGa1-xN) layer, forming a third aluminum gallium nitride (AlzGa1-zN) layer on the second aluminum gallium nitride (AlyGal-yN) layer, wherein the first aluminum gallium nitride (AlxGa1-xN) layer, the second aluminum gallium nitride (AlyGa1-yN) layer, and the third aluminum gallium nitride (AlzGa1-zN) layer are formed to have crystal defects and a composition ratio of aluminum (where 1>x>y>z>0) that are gradually decreased as heights of the layers are increased.

Abstract translation: 提供了一种氮化镓铝模板及其制造方法。 制造方法包括在基板上形成氮化铝（AlN）层，在氮化铝（AlN）层上形成第一氮化镓铝（Al x Ga 1-x N）层，在第一铝氮化镓（AlAlGa1-xN）层上形成第二氮化镓铝 所述第一氮化镓铝（Al x Ga 1-x N）层，在所述第二氮化铝镓（AlyGal-yN）层上形成第三氮化镓铝（AlzGa1-zN）层，其中所述第一氮化镓铝（Al x Ga 1-x N） 第二氮化镓铝（Al y Ga 1-y N）层和第三氮化镓铝（AlzGa1-zN）层形成为具有晶体缺陷和铝（其中1> x> y> z> 0）的组成比为 随着层数的增加而逐渐减小。