公开(公告)号：US20140183441A1

公开(公告)日：2014-07-03

申请号：US14063361

申请日：2013-10-25

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Kyung Hyun PARK ,  Sang-Pil HAN ,  Jeong Woo PARK ,  Han-Cheol RYU ,  Kiwon MOON ,  Namje KIM ,  Hyunsung KO

IPC: H01L33/34 ,  H01L31/028

CPC classification number: H01L31/028 ,  H01L31/085

Abstract: Provided is a terahertz wave generating/detecting apparatus and a method for manufacturing the same. The terahertz wave generating/detecting apparatus includes; a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate; a graphene layer disposed on the lower metal layer on the active region; and upper metal layers extending in the first direction on the graphene layer of the active region and the substrate in the transmission region, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by beated laser light applied to the graphene layer and the metal layer.

Abstract translation: 提供一种太赫兹波发生/检测装置及其制造方法。 太赫兹波发生/检测装置包括： 具有有源区和发射区的衬底; 在所述有源区域和所述基板的透射区域上沿第一方向延伸的下金属层; 设置在有源区上的下金属层上的石墨烯层; 以及在有源区域的石墨烯层和透射区域中的衬底的第一方向上延伸的上金属层，其中通过在石墨烯层和石墨烯层之间的边界表面上诱导的表面等离子体激元产生或放大太赫兹波 通过施加到石墨烯层和金属层上的激光的下部金属层。

公开(公告)号：US20140166881A1

公开(公告)日：2014-06-19

申请号：US14049059

申请日：2013-10-08

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sang-Pil HAN ,  Kyung Hyun PARK ,  Namje KIM ,  Han-Cheol RYU ,  Jeong Woo PARK ,  Hyunsung KO ,  Kiwon MOON

IPC: F21K99/00

CPC classification number: G01N21/3581

Abstract: A terahertz wave generating module includes a bidirectional light source which provides a first dual-mode beam in a first direction and a second dual-mode beam in a second direction; a forward lens unit which focuses the first dual-mode beam; a photomixer unit which converts the first dual-mode beam focused by the forward lens unit into a terahertz wave; a backward lens unit which focuses the second dual-mode beam; and a light output unit which uses the second dual-mode beam focused by the backward lens unit as a light signal, wherein the bidirectional light source, the forward lens unit, the photomixer unit, the backward lens unit, and the light output unit are integrated in a housing.

Abstract translation: 太赫兹波发生模块包括双向光源，其在第一方向上提供第一双模光束，而在第二方向上提供第二双模光束; 聚焦第一双模光束的前透镜单元; 将由前向透镜单元聚焦的第一双模光束转换为太赫兹波的光混合器单元; 聚焦第二双模光束的反向透镜单元; 以及使用由后向透镜单元聚焦的第二双模光束作为光信号的光输出单元，其中双向光源，前透镜单元，光混合器单元，后透镜单元和光输出单元是 融入住房。

公开(公告)号：US20250169139A1

公开(公告)日：2025-05-22

申请号：US18945658

申请日：2024-11-13

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Hoon KIM ,  Dongwoo SUH ,  Jeong Woo PARK ,  Minkyun SOHN ,  Seong Hyun LEE ,  Wangjoo LEE ,  Jinha KIM ,  Min-A PARK ,  Sun Kyu JUNG ,  Subin HEO

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: Provided is a transistor device including: a substrate; a lower transistor positioned on the substrate and including a lower channel layer, a lower gate, and a lower source/drain region; an upper transistor positioned on the lower transistor and including an upper channel layer, an upper gate, and an upper source/drain region; and an inner spacer configured to insulate the lower transistor from the upper transistor, wherein the inner spacer may be formed by removing a portion of each of a first sacrificial layer and a second sacrificial layer, which are formed above and below the lower channel layer and the upper channel layer and have different Ge contents, to a depth according to a Ge content and then depositing an insulating material.

公开(公告)号：US20200150420A1

公开(公告)日：2020-05-14

申请号：US16668574

申请日：2019-10-30

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Eui Su LEE ,  Kyung Hyun PARK ,  IL MIN LEE ,  Kiwon MOON ,  Dong Woo PARK ,  Hyun Soo KIM ,  Ho Jin LEE ,  Jeong Woo PARK ,  Jun Hwan SHIN ,  Kyeong Sun CHOI ,  Dahye CHOI

IPC: G02B26/12 ,  G02B26/08 ,  G02B26/10

Abstract: Provided are a polygon mirror assembly and a scan device. A polygon mirror assembly includes: a polygon mirror including a plurality of reflection surfaces spaced apart from a rotation axis by a predetermined distance; a first motor for rotating the polygon mirror around the rotation axis; a second motor for moving the polygon mirror in a first axial direction such that the rotation axis is tilted while the first motor rotates the polygon mirror; and a clock signal extraction surface for extracting a clock signal for detecting a change in a rotational speed of the first motor.

公开(公告)号：US20150179842A1

公开(公告)日：2015-06-25

申请号：US14307856

申请日：2014-06-18

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jeong Woo PARK ,  Sang Pil HAN ,  Dae Yong KIM ,  Hyun Sung KO ,  Nam Je KIM ,  Ki Won MOON ,  Il Min LEE ,  Eui Su LEE ,  Kyung Hyun PARK

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/11 ,  H01L31/10

Abstract: Disclosed is a rectifier capable of performing a high speed rectifying operation, and includes: a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer, in which the first semiconductor layer and the third semiconductor layer are formed of semiconductor layers having the same type, and the second semiconductor layer is formed between the first semiconductor layer and the third semiconductor layer, is formed of a semiconductor layer having a different type from that of the first semiconductor layer and the third semiconductor layer, and is formed in graded doped state.

Abstract translation: 公开了一种能够执行高速整流操作的整流器，包括：第一半导体层; 第二半导体层; 以及第三半导体层，其中第一半导体层和第三半导体层由具有相同类型的半导体层形成，并且第二半导体层形成在第一半导体层和第三半导体层之间，由半导体 层与第一半导体层和第三半导体层的类型不同，并且以渐变掺杂状态形成。