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    III-V component with multi-layer silicon photonics waveguide platform
    11.
    发明授权
    III-V component with multi-layer silicon photonics waveguide platform 有权

    公开(公告)号：US10782475B2

    公开(公告)日：2020-09-22

    申请号：US16433846

    申请日：2019-06-06

    Applicant: Cisco Technology, Inc.

    Inventor： Jock T. Bovington ,  Kenneth J. Thomson ,  Dominic F. Siriani

    IPC: G02B6/12 ,  G02B6/122 ,  G02B6/13

    Abstract: Embodiments provide for a photonic platform, comprising: a silicon component; a III-V component; and a bonding layer contacting the silicon component on one side and the III-V component on the opposite side; wherein the silicon component comprises: a silicon substrate; a dielectric, contacting the silicon substrate on one face and the bonding layer on the opposite face; a silicon cores disposed in the dielectric; and wherein the III-V component comprises: a III-V cladding; a III-V contact, having a first side that contacts the bonding layer; and an active region, disposed on the III-V contact and separating the III-V contact from the III-V cladding, wherein the active region is located relative to the silicon cores to define an optical path that includes the active region and the silicon cores.

    Supermode filtering waveguide emitters
    15.
    发明授权
    Supermode filtering waveguide emitters 有权

    公开(公告)号：US11539186B2

    公开(公告)日：2022-12-27

    申请号：US16294634

    申请日：2019-03-06

    Applicant: Cisco Technology, Inc.

    Inventor： Dominic F. Siriani ,  Kenneth J. Thomson

    IPC: H01S5/00 ,  H01S5/10 ,  H01S5/026 ,  H01S5/22 ,  H01S5/34 ,  H01S5/065 ,  H01S5/50

    Abstract: An optical apparatus comprises a semiconductor substrate, and a supermode filtering waveguide (SFW) emitter disposed on the semiconductor substrate. The SFW emitter comprises a first optical waveguide, a spacer layer, and a second optical waveguide spaced apart from the first optical waveguide by the spacer layer. The second optical waveguide is evanescently coupled with the first optical waveguide and is configured, in conjunction with the first waveguide, to selectively propagate only a first mode of a plurality of optical modes. The SFW emitter further comprises an optically active region disposed in one of the first optical waveguide and the second optical waveguide.

    Laser integration into a silicon photonics platform
    17.
    发明授权
    Laser integration into a silicon photonics platform 有权

    公开(公告)号：US11133645B2

    公开(公告)日：2021-09-28

    申请号：US16364994

    申请日：2019-03-26

    Applicant: Cisco Technology, Inc.

    Inventor： Jock T. Bovington ,  Kenneth J. Thomson ,  Dominic F. Siriani

    IPC: H01S5/026 ,  H01S5/02 ,  H01S5/028 ,  H01S5/11 ,  H01S5/02325 ,  H01S5/042 ,  H01S5/00

    Abstract: The present disclosure provides for laser integration into photonic platforms in which a first wafer, including a first substrate and a first insulator that includes a first plurality of dies that each include a first set of optical waveguides, is bonded to a second wafer, including a second substrate and a second insulator that includes a second plurality of dies that each include a second set of optical waveguides. The bond between the two wafers defines a wafer bond interface joining the first insulator with the second insulator and vertically aligning the first plurality of dies with the second plurality of dies such that respective first sets of optical waveguides are optically coupled with respective second sets of optical waveguides.

    Selective-area growth of III-V materials for integration with silicon photonics
    18.
    发明授权
    Selective-area growth of III-V materials for integration with silicon photonics 有权

    公开(公告)号：US11018473B1

    公开(公告)日：2021-05-25

    申请号：US16203463

    申请日：2018-11-28

    Applicant: Cisco Technology, Inc.

    Inventor： Dominic F. Siriani ,  Jock T. Bovington ,  Vipulkumar K. Patel

    IPC: H01S5/026 ,  H01S5/343 ,  H01S5/02 ,  G02B6/136 ,  G02B6/122 ,  H01S5/028 ,  H01S5/10 ,  G02B6/13 ,  G02B6/12

    Abstract: Embodiments provide for selective-area growth of III-V materials for integration with silicon photonics. The resulting platform includes a substrate; an insulator, extending a first distance from the substrate, including a passive optical component at a second distance from the substrate less than the first distance, and defining a pit extending to the substrate; and a III-V component, extending from the substrate within in the pit defined in the insulator, the III-V component including a gain medium included at the second distance from the substrate and optically coupled with the passive optical component. The pit may define an Optical Coupling Interface between the III-V component and the passive optical component, or a slit defined between the III-V component and the passive optical component may define the Optical Coupling Interface.

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