公开(公告)号：US20140104474A1

公开(公告)日：2014-04-17

申请号：US14052883

申请日：2013-10-14

Applicant: CANON KABUSHIKI KAISHA

Inventor： Tsutomu Tange ,  Ginjiro Toyoguchi

IPC: H04N5/3745 ,  H01L27/146

CPC classification number: H04N5/3745 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: A solid-state image pickup device includes an array of a first pixel and a second pixel. The second pixel includes a light shielding portion provided above a photoelectric conversion portion thereof and configured to block some of incident light so as to perform focus detection, and a light guiding portion provided at least above an upper face of the light shielding portion.

Abstract translation: 固态图像拾取装置包括第一像素和第二像素的阵列。 第二像素包括设置在其光电转换部分上方并被配置为阻挡一些入射光以进行焦点检测的遮光部分，以及设置在遮光部分的上表面的至少上方的导光部分。

公开(公告)号：US12159946B2

公开(公告)日：2024-12-03

申请号：US17575504

申请日：2022-01-13

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yoshiei Tanaka ,  Takumi Ogino ,  Tsutomu Tange

IPC: H01L31/02 ,  H01L27/146

Abstract: A photoelectric conversion apparatus comprises a semiconductor layer including a plurality of photoelectric conversion portions and having a first surface and a second surface that is the surface opposite to the first surface, a wiring structure disposed on the second surface side of the semiconductor layer, and a metal compound film disposed on the first surface side of the semiconductor layer. The metal compound film contains hydrogen and carbon. The concentration of the hydrogen in the interface on the semiconductor layer side of the metal compound film is 1×1021 atoms/cm3 or more and 1×1022 atoms/cm3 or less. The concentration of the carbon in the interface on the semiconductor layer side of the metal compound film is 5×1020 atoms/cm3 or more and 1×1022 atoms/cm3 or less.

公开(公告)号：US11605665B2

公开(公告)日：2023-03-14

申请号：US17076678

申请日：2020-10-21

Applicant: CANON KABUSHIKI KAISHA

Inventor： Katsunori Hirota ,  Tsutomu Tange ,  Takuya Hara

IPC: H01L27/146

Abstract: A semiconductor apparatus includes a semiconductor layer that includes a photoelectric conversion unit disposed between a front surface and a back surface and a transistor disposed at the front surface, and a dielectric film in contact with the back surface, wherein the semiconductor layer includes a region extending 100 nm from the back surface, the region having boron concentrations whose maximum value is more than 1×1020 [atoms/cm3].

公开(公告)号：US20220115429A1

公开(公告)日：2022-04-14

申请号：US17558814

申请日：2021-12-22

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshiyuki Ogawa ,  Sho Suzuki ,  Takehito Okabe ,  Mitsuhiro Yomori ,  Yukinobu Suzuki ,  Akihiro Kawano ,  Tsutomu Tange

IPC: H01L27/146 ,  H04N5/369

Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.

公开(公告)号：US11101312B2

公开(公告)日：2021-08-24

申请号：US16749221

申请日：2020-01-22

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takumi Ogino ,  Hiroaki Kobayashi ,  Tsutomu Tange ,  Akihiro Shimizu

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/522

Abstract: A semiconductor apparatus comprising: a first semiconductor component including a first semiconductor layer and a first insulation film; and a second semiconductor component including a second semiconductor layer and a second insulation film, wherein the first semiconductor component and the second semiconductor component are bonded to each other by each of a plurality of first electric conductor portions provided in the first insulation film and each of a plurality of second electric conductor portions provided in the second insulation film, each of the plurality of first electric conductor portions is constituted by one pad surrounded by the first insulation film and N vias bonded to the one pad so as to be positioned between the one pad and the first semiconductor layer, and a volume VTR of the one pad and a total volume VTH of the N vias satisfy VTR/VTH≥N.

公开(公告)号：US20210126026A1

公开(公告)日：2021-04-29

申请号：US17076678

申请日：2020-10-21

Applicant: CANON KABUSHIKI KAISHA

Inventor： Katsunori Hirota ,  Tsutomu Tange ,  Takuya Hara

IPC: H01L27/146

Abstract: A semiconductor apparatus includes a semiconductor layer that includes a photoelectric conversion unit disposed between a front surface and a back surface and a transistor disposed at the front surface, and a dielectric film in contact with the back surface, wherein the semiconductor layer includes a region extending 100 nm from the back surface, the region having boron concentrations whose maximum value is more than 1×1020 [atoms/cm3].

公开(公告)号：US10991741B2

公开(公告)日：2021-04-27

申请号：US16556964

申请日：2019-08-30

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yoshiei Tanaka ,  Katsunori Hirota ,  Yusuke Onuki ,  Tsutomu Tange ,  Takumi Ogino

IPC: H01L27/146

Abstract: A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd

公开(公告)号：US11990490B2

公开(公告)日：2024-05-21

申请号：US17222743

申请日：2021-04-05

Applicant: CANON KABUSHIKI KAISHA

Inventor： Tsutomu Tange ,  Toshiyuki Ogawa ,  Hideaki Ishino ,  Yusuke Onuki

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645

Abstract: A technique advantageous for improving an optical property of a photoelectric conversion apparatus is provided. The photoelectric conversion apparatus includes a photoelectric conversion layer and a light-shielding film that covers the photoelectric conversion layer, wherein the light-shielding film includes one metallic layer and another metallic layer located between the one metallic layer and the photoelectric conversion layer.

公开(公告)号：US11855116B2

公开(公告)日：2023-12-26

申请号：US17520199

申请日：2021-11-05

Applicant: CANON KABUSHIKI KAISHA

Inventor： Tsutomu Tange ,  Takumi Ogino ,  Hiroaki Kobayashi

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14636 ,  H01L24/05 ,  H01L27/14643 ,  H01L27/14689

Abstract: A first conductive portion includes a first pad surrounded by a first insulator film in a plane perpendicular to a first direction, and a first via connected to the first pad so that the first via is positioned between the first pad and a first semiconductor layer in the first direction. A second conductive portion includes a second pad surrounded by a second insulator film in a plane perpendicular to the first direction, and a second via connected to the second pad so that the second via is positioned between the second pad and a second semiconductor layer in the first direction. The first and the second conductive portions are different in dimension.

公开(公告)号：US20220231175A1

公开(公告)日：2022-07-21

申请号：US17575504

申请日：2022-01-13

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yoshiei Tanaka ,  Takumi Ogino ,  Tsutomu Tange

IPC: H01L31/02 ,  H01B5/14 ,  H01B1/04

Abstract: A photoelectric conversion apparatus comprises a semiconductor layer including a plurality of photoelectric conversion portions and having a first surface and a second surface that is the surface opposite to the first surface, a wiring structure disposed on the second surface side of the semiconductor layer, and a metal compound film disposed on the first surface side of the semiconductor layer. The metal compound film contains hydrogen and carbon. The concentration of the hydrogen in the interface on the semiconductor layer side of the metal compound film is 1×1021 atoms/cm3 or more and 1×1022 atoms/cm3 or less. The concentration of the carbon in the interface on the semiconductor layer side of the metal compound film is 5×1020 atoms/cm3 or more and 1×1022 atoms/cm3 or less.