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    SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME
    11.
    发明申请
    SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190237495A1

    公开(公告)日：2019-08-01

    申请号：US16256131

    申请日：2019-01-24

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Toshihiro Shoyama

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

    Abstract: A method of manufacturing a semiconductor apparatus, includes forming a first trench on a side of a first face of a semiconductor substrate having the first face and a second face, forming a gettering region by implanting ions in the semiconductor substrate through the first trench, and forming a second trench on the side of the first face of the semiconductor substrate after the forming the gettering region. A depth of a bottom surface of the second trench with reference to the first face is smaller than a depth of a bottom surface of the first trench with reference to the first face.

    Method of manufacturing solid-state image sensor, solid-state image sensor, and camera
    14.
    发明授权
    Method of manufacturing solid-state image sensor, solid-state image sensor, and camera 有权

    公开(公告)号：US10475841B2

    公开(公告)日：2019-11-12

    申请号：US14721150

    申请日：2015-05-26

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Toshihiro Shoyama

    IPC: H04N3/14 ,  H04N5/335 ,  H01L27/146

    Abstract: A method of manufacturing a solid-state image sensor comprising a pixel part including a photoelectric conversion element and a MOS transistor, comprising steps of forming a first insulating film made of a nitrogen-containing silicon compound on the photoelectric conversion element and the MOS transistor, forming an opening in at least a portion of the first insulating film, which is positioned above a channel of the MOS transistor, forming a second insulating film on the first insulating film, forming a contact hole extending through the second insulating film and the first insulating film, and forming, in the contact hole, a contact plug to be connected to the MOS transistor.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    16.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180151614A1

    公开(公告)日：2018-05-31

    申请号：US15821617

    申请日：2017-11-22

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Nobuyuki Endo ,  Masashi Kusukawa ,  Toshihiro Shoyama

    IPC: H01L27/146

    CPC classification number: H01L27/14614 ,  H01L27/14616 ,  H01L27/14689 ,  H01L29/42364

    Abstract: A semiconductor device has a silicon layer having a photoelectric conversion portion, a transfer electrode of a transfer portion disposed on the silicon layer, the transfer portion transferring a charge of the photoelectric conversion portion, and an insulator film having a first portion located between the transfer electrode and the silicon layer and a second portion located on the photoelectric conversion portion, the first portion and the second portion of the insulator film contain nitrogen, oxygen, and silicon, and the distance between the position where the nitrogen concentration shows the largest value in the second portion and the silicon layer is larger than the distance between the position where the nitrogen concentration shows the largest value in the first portion and the silicon layer.

    Photoelectric conversion device, method of manufacturing the same, and equipment
    17.
    发明授权
    Photoelectric conversion device, method of manufacturing the same, and equipment 有权

    公开(公告)号：US10692922B2

    公开(公告)日：2020-06-23

    申请号：US16196389

    申请日：2018-11-20

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Tasuku Kaneda ,  Toshihiro Shoyama

    IPC: H01L27/146 ,  H04N5/378 ,  G06T7/50 ,  B60W30/095

    Abstract: A photoelectric conversion device includes photoelectric converter arranged in semiconductor substrate made of silicon and is and transistor arranged on surface of the substrate. The photoelectric converter includes first region of a first conductivity type, configured to accumulate charges, and second region of second conductivity type. The first region is arranged between the surface and the second region. The substrate includes third region as source and/or drain of the transistor. The substrate includes, in position which is below the third region and is apart from the third region, impurity region containing group 14 element other than silicon. Depth from the surface of peak position in density distribution of the group 14 element in the impurity region is smaller than depth from the surface of peak position in density distribution of majority carrier in the second region.

    METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR, SOLID-STATE IMAGE SENSOR, AND CAMERA
    18.
    发明申请
    METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR, SOLID-STATE IMAGE SENSOR, AND CAMERA 审中-公开

    公开(公告)号：US20200035740A1

    公开(公告)日：2020-01-30

    申请号：US16592038

    申请日：2019-10-03

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Toshihiro Shoyama

    IPC: H01L27/146

    Abstract: A method of manufacturing a solid-state image sensor comprising a pixel part including a photoelectric conversion element and a MOS transistor, comprising steps of forming a first insulating film made of a nitrogen-containing silicon compound on the photoelectric conversion element and the MOS transistor, forming an opening in at least a portion of the first insulating film, which is positioned above a channel of the MOS transistor, forming a second insulating film on the first insulating film, forming a contact hole extending through the second insulating film and the first insulating film, and forming, in the contact hole, a contact plug to be connected to the MOS transistor.

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