-
11.发明授权公开(公告)号：US12164733B2
公开(公告)日：2024-12-10
申请号：US17802121
申请日：2021-09-18
Abstract: The present disclosure provides a metal mesh array and a manufacturing method thereof, a thin film sensor and a manufacturing method thereof, and belongs to the field of electronic device technology. A method for manufacturing a metal mesh array includes: providing a base substrate; forming a first metal layer on the base substrate as a seed layer; forming a first interlayer dielectric layer on a side of the seed layer away from the base substrate such that the first interlayer dielectric layer includes first groove structures and second groove structures in working areas and arranged in an intersecting manner; and performing an electroplating process on the seed layer to form first metal lines in the first groove structures and second metal lines in the second groove structures. The first metal lines and second metal lines in each working area are arranged in an intersecting manner, thereby forming a metal mesh.
-
12.发明授权公开(公告)号：US12080812B2
公开(公告)日：2024-09-03
申请号：US17432422
申请日：2021-02-22
Inventor： Kui Liang , Tuo Sun , Yichi Zhang
IPC: H01L31/0224 , H01L31/042 , H01L31/18
CPC classification number: H01L31/0224 , H01L31/042 , H01L31/18
Abstract: A photoelectric detection substrate and a manufacturing method thereof, and a photoelectric detection device are provided. The photoelectric detection substrate includes: a base substrate and a semiconductor layer arranged on the base substrate, wherein the semiconductor layer is configured to convert an optical signal into an electrical signal.
-
公开(公告)号：US12080731B2
公开(公告)日：2024-09-03
申请号：US17630651
申请日：2021-03-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Fanli Meng , Jiangbo Chen , Fan Li , Kui Liang , Da Li , Shuo Zhang , Zeyuan Li
IPC: H01L27/146 , H04N25/778 , H01L31/108
CPC classification number: H01L27/14607 , H01L27/14692 , H01L27/14698 , H04N25/778 , H01L27/14616 , H01L31/1085
Abstract: The disclosure provides a light detection substrate, a manufacturing method thereof and a light detection apparatus. The light detection substrate includes a plurality of light detection units, each of the light detection units includes a first electrode, a second electrode and a photoelectric conversion layer, a spacer region exists between orthographic projections of the first electrode and the second electrode on a substrate, the photoelectric conversion layer is provided with at least one opening, and an orthographic projection of the at least one opening on the substrate is located in the spacer region.
-
公开(公告)号：US11631928B2
公开(公告)日：2023-04-18
申请号：US17336448
申请日：2021-06-02
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Chunxin Li , Jingwen Guo , Qianhong Wu , Kui Liang , Tuo Sun
Abstract: A phase shifter and a method for manufacturing the same are provided. The phase shifter includes a substrate, a signal line on the substrate, ground lines in pairs and on the substrate, and at least one film bridge on the substrate and spaced apart from the signal line. Two adjacent ground lines of the ground lines are on both sides of the signal line and spaced apart from the signal line, respectively, and both ends of each film bridge are on the two adjacent ground lines, respectively. The signal line is in a space surrounded by each film bridge and the substrate. Each film bridge includes a metal layer opposite to the signal line, the metal layer has a plurality of openings therein, and the plurality of openings penetrate through the metal layer in a thickness direction of the metal layer.
-
公开(公告)号：US10215709B2
公开(公告)日：2019-02-26
申请号：US14375630
申请日：2013-11-12
Inventor： Kui Liang , Jianfeng Yuan , Seung Moo Rim
IPC: G01N21/95 , G01N21/88 , G01N21/956 , G02F1/13
Abstract: A detecting system configured for detecting flaws on an object to be detected, increasing: a display processing device; an tunable light source; at least one light transmitter, wherein the tunable light source is connected with the at least one light transmitter; at least one light receiver configured for cooperating with the at least one light transmitter, wherein the at least one light receiver is connected with the display processing device; wherein the display processing device is connected to the tunable light source, receives and processes information provided by the light receiver to form detection images, and is operable to adjust the tunable light source.
-
Patent Agency Ranking
公开(公告)号：US11522090B2
公开(公告)日：2022-12-06
申请号：US16976148
申请日：2019-12-16
Inventor： Kui Liang , Xiaohui Liu , Hu Meng , Dali Liu , Liye Duan , Chiachiang Lin
IPC: H01L27/14 , H01L31/0216 , H01L31/0224 , H01L27/146 , H01L31/108
Abstract: The present disclosure provides a flat panel detection substrate, a fabricating method thereof and a flat panel detector. The flat panel detection substrate according to the present disclosure includes a base substrate; a bias electrode and a sense electrode on the base substrate; and a semiconductor layer over the bias electrode and the sense electrode, the semiconductor layer having a thickness greater than 100 nm.
-
公开(公告)号：US11366240B2
公开(公告)日：2022-06-21
申请号：US16761858
申请日：2019-06-28
Inventor： Kui Liang
IPC: G01T1/20 , G01T1/24 , H01L27/146
Abstract: A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a thin film transistor on a base substrate; an inter-layer dielectric layer on a side of the thin film transistor away from the base substrate; a sensing electrode and a bias electrode on a side of the inter-layer dielectric layer away from the base substrate, wherein the sensing electrode extends through the inter-layer dielectric layer to electrically connect to the thin film transistor; a passivation layer on a side of the sensing electrode and the bias electrode away from the inter-layer dielectric layer, wherein the passivation layer includes a first portion and a second portion; and a radiation detection layer on a side of the passivation layer away from the base substrate. The first portion and the second portion form a substantially flat contacting surface.
-
公开(公告)号：US11362416B2
公开(公告)日：2022-06-14
申请号：US16912506
申请日：2020-06-25
IPC: H01Q1/36
Abstract: A liquid crystal antenna includes a first substrate, a second substrate, and liquid crystals arranged between the first substrate and the second substrate. First protrusions and second protrusions are arranged at a surface of the second substrate facing the first substrate, a size of each first protrusion in a first direction is substantially greater than a size of each second protrusion in the first direction, and the first direction is a direction perpendicularly from the second substrate to the first substrate. A run-through labyrinth-type gap is defined by the first protrusions at a surface of the second substrate, and each second protrusion is arranged in the labyrinth-type gap.
-
公开(公告)号：US11275185B2
公开(公告)日：2022-03-15
申请号：US16641708
申请日：2019-06-21
Inventor： Kui Liang , Xiaohui Liu , Jiangbo Chen , Da Li , Shuo Zhang , Zeyuan Li , Fanli Meng , Fan Li
IPC: G01T1/24 , H01L27/146
Abstract: A ray detector and a ray detection panel. The ray detector includes a base substrate, a thin film transistor, a scintillator, and a photodetector; the scintillator is located on aside of the photodetector that is away from the base substrate; the photodetector includes: a first conductive structure; a semiconductor layer; a second conductive structure; a first dielectric layer; and a second dielectric layer, the second conductive structure is electrically connected with source electrode; the thin film transistor is located between the base substrate and the photodetector; and an orthographic projection of the thin film transistor on the base substrate at least partially falls into an orthographic projection of the photodetector on the base substrate.
-
公开(公告)号：US20210405216A1
公开(公告)日：2021-12-30
申请号：US16761858
申请日：2019-06-28
Inventor： Kui Liang
IPC: G01T1/20 , H01L27/146
Abstract: A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a thin film transistor on a base substrate; an inter-layer dielectric layer on a side of the thin film transistor away from the base substrate; a sensing electrode and a bias electrode on a side of the inter-layer dielectric layer away from the base substrate, wherein the sensing electrode extends through the inter-layer dielectric layer to electrically connect to the thin film transistor; a passivation layer on a side of the sensing electrode and the bias electrode away from the inter-layer dielectric layer, wherein the passivation layer includes a first portion and a second portion; and a radiation detection layer on a side of the passivation layer away from the base substrate. The first portion and the second portion form a substantially flat contacting surface.
-
-
-
-
-
-
-
-
-
Search Results
25
records
(took 0.016 seconds)
