公开(公告)号：US12206049B2

公开(公告)日：2025-01-21

申请号：US17620423

申请日：2021-01-06

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Guo ,  Hu Meng ,  Qi Qi

IPC: H01L33/38 ,  H01L33/00

Abstract: An inorganic light-emitting diode substrate includes: a base, a plurality of epitaxial layer structures disposed on the base, a passivation layer, and a plurality of second electrodes disposed on a side of the passivation layer away from the base. The base includes a base substrate and a plurality of first electrodes disposed on the base substrate. The plurality of epitaxial layer structures are spaced apart, and each first electrode is coupled to one epitaxial layer structure. The passivation layer is made of photoresist. The passivation layer covers surfaces, away from the base, of the plurality of epitaxial layer structures, and fills gaps between the plurality of epitaxial layer structures. The passivation layer has a plurality of via holes, and each second electrode is coupled to one epitaxial layer structure through at least one via hole.

公开(公告)号：US11545610B2

公开(公告)日：2023-01-03

申请号：US15922016

申请日：2018-03-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hu Meng

IPC: H01L41/113 ,  G01L1/16 ,  H01L41/27 ,  H01L41/047 ,  H01L41/193 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  G01L1/22 ,  H01L29/84 ,  H01L29/66 ,  H01L29/06

Abstract: The present disclosure provides a piezoelectric sensor, a pressure detecting device, their manufacturing methods and a detection method. The piezoelectric sensor comprises a thin film transistor located on a substrate and comprising an active layer, and a piezoelectric layer that is in contact with the active layer of the thin film transistor.

公开(公告)号：US10923671B2

公开(公告)日：2021-02-16

申请号：US16167204

申请日：2018-10-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hu Meng

IPC: H01L51/05 ,  H01L29/06 ,  H01L51/00 ,  B82Y10/00 ,  H01L29/16 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/786 ,  H01L29/66

Abstract: Disclosed is a nanofilm, a thin film transistor and manufacture methods thereof. The nanofilm of the present disclosure comprises a plurality of regions distributed in a film plane dimension, wherein each of the regions is composed of one kind of nanomaterial, and nanomaterials of adjacent regions are different from each other and contact with each other to form a heterojunction or a Schottky junction.

公开(公告)号：US10777588B2

公开(公告)日：2020-09-15

申请号：US16341012

申请日：2018-08-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  PEKING UNIVERSITY

Inventor： Hu Meng ,  Xuelei Liang ,  Jiye Xia ,  Boyuan Tian ,  Guodong Dong ,  Qi Huang

IPC: H01L27/12 ,  C01B32/168 ,  C01F17/218 ,  C01F7/42 ,  H01L21/02 ,  H01L21/66

Abstract: The present application provides a method of fabricating a thin film transistor. The method includes selecting a nano-structure material having a monotonic relationship between a threshold voltage and a channel length when the nano-structure material is formed as a channel part in a thin film transistor; forming an active layer using the nano-structure material; determining a nominal channel length of a channel part of the thin film transistor based on the monotonic relationship and a reference threshold voltage so that the thin film transistor is formed to have a nominal threshold voltage; and forming a source electrode and a drain electrode thereby forming the channel part in the active layer having the nominal channel length.

公开(公告)号：US20200185422A1

公开(公告)日：2020-06-11

申请号：US16341012

申请日：2018-08-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  PEKING UNIVERSITY

Inventor： Hu Meng ,  Xuelei Liang ,  Jiye Xia ,  Boyuan Tian ,  Guodong Dong ,  Qi Huang

IPC: H01L27/12 ,  C01B32/168 ,  C01F17/218 ,  C01F7/42 ,  H01L21/02 ,  H01L21/66

Abstract: The present application provides a method of fabricating a thin film transistor. The method includes selecting a nano-structure material having a monotonic relationship between a threshold voltage and a channel length when the nano-structure material is formed as a channel part in a thin film transistor; forming an active layer using the nano-structure material; determining a nominal channel length of a channel part of the thin film transistor based on the monotonic relationship and a reference threshold voltage so that the thin film transistor is formed to have a nominal threshold voltage; and forming a source electrode and a drain electrode thereby forming the channel part in the active layer having the nominal channel length.

公开(公告)号：US10431692B2

公开(公告)日：2019-10-01

申请号：US15533128

申请日：2016-05-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hu Meng

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  H01L51/05 ,  H01L51/00 ,  H01L29/08 ,  H01L35/24 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49

Abstract: Embodiments of the present disclosure provide preparation methods for a semiconductor layer and a TFT, a TFT and an array substrate. The preparation method for a semiconductor layer includes forming a silicon dioxide film on a substrate; forming sidewalls at two ends of the semiconductor layer to be formed by patterning process; performing amination treatment on the sidewalls so that an aminosiloxane monolayer self-assembly is formed on the surface of the sidewalls; carboxylating a carbon nanotube solution and making the carboxylated carbon nanotube solution on the surface of the substrate with the sidewalls formed to form a carbon nanotube film; removing portions of the carbon nanotube film other than the portion between the sidewalls to form a semiconductor layer.

公开(公告)号：US20190058106A1

公开(公告)日：2019-02-21

申请号：US15922016

申请日：2018-03-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hu Meng

IPC: H01L41/113 ,  G01L1/16 ,  H01L41/193 ,  H01L41/047 ,  H01L41/27

Abstract: The present disclosure provides a piezoelectric sensor, a pressure detecting device, their manufacturing methods and a detection method. The piezoelectric sensor comprises a thin film transistor located on a substrate and comprising an active layer, and a piezoelectric layer that is in contact with the active layer of the thin film transistor.

公开(公告)号：US10186677B2

公开(公告)日：2019-01-22

申请号：US15539764

申请日：2016-11-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hu Meng

IPC: H01L51/00 ,  H01L51/50

Abstract: An electroluminescent device and a manufacturing method thereof, and a display apparatus are provided. The electroluminescent device includes a base substrate; and an electron transport layer, disposed on the base substrate, the electron transport layer includes a first film layer for transporting electrons and a regulating structure arranged in contact with the first film layer, and the regulating structure is configured to regulate an electron mobility of the electron transport layer.

公开(公告)号：US20180219100A1

公开(公告)日：2018-08-02

申请号：US15529682

申请日：2016-11-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Changcheng Ju ,  Hu Meng ,  Yanzhao Li

IPC: H01L29/786 ,  H01L29/267 ,  H01L29/24 ,  H01L29/06 ,  H01L29/66 ,  H01L21/02 ,  H01L29/45

CPC classification number: H01L29/78618 ,  B82Y10/00 ,  G02F1/1368 ,  G02F2202/36 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/0676 ,  H01L29/24 ,  H01L29/267 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present application discloses a thin film transistor including a base substrate and an active layer on the base substrate having a first portion corresponding to a channel region, a second portion corresponding to a source electrode contact region, and a third portion corresponding to a drain electrode contact region. The second portion and the third portion include a three-dimensional nanocomposite material having a semiconductor material matrix and a plurality of nanopillars in the semiconductor material matrix.