Manufacturing method of array substrate, array substrate, display panel and display device

    公开(公告)号:US10921662B2

    公开(公告)日:2021-02-16

    申请号:US16335837

    申请日:2018-07-05

    Inventor: Binbin Cao

    Abstract: The present disclosure discloses a manufacturing method of an array substrate, an array substrate, a display panel and a display device. The manufacturing method comprises: forming a shielding layer on a base substrate, wherein the shielding layer absorbs light and is made of photoresist; and forming a transistor device layer on the base substrate on which the shielding layer is formed, wherein an orthographic projection of a conductor in the transistor device layer on the base substrate is within an orthographic projection of the shielding layer on the base substrate. The shielding layer can prevent external light from irradiating the conductor in the transistor device layer, and can absorb external light. In addition, the manufacturing process is simple.

    One glass solution touch panel and fabricating method thereof

    公开(公告)号:US09823799B2

    公开(公告)日:2017-11-21

    申请号:US15133383

    申请日:2016-04-20

    CPC classification number: G06F3/044 G06F2203/04103 G06F2203/04111

    Abstract: A method for fabricating a one glass solution touch panel is provided. The method includes forming a protective layer on a first surface of a substrate, and forming a black matrix, a plurality of first electrodes, a plurality of second electrodes, a first over coat layer, and a plurality of conductive bridges on a second surface of the substrate, wherein the second surface includes a visual area in which the first electrodes and the second electrodes are arranged in an alternating pattern, and a non-visual area where the black matrix is provided, wherein the second electrode includes a plurality of conductive lumps, wherein each of the conductive lumps is located between adjacent first electrodes, wherein the first over coat layer separates the conductive lumps from the first electrodes, and wherein each conductive bridge connects the conductive lumps belonging to the same second electrode.

    CONDUCTIVE STRUCTURE AND METHOD OF MANUFACTURING THE SAME, ARRAY SUBSTRATE
    16.
    发明申请
    CONDUCTIVE STRUCTURE AND METHOD OF MANUFACTURING THE SAME, ARRAY SUBSTRATE 有权
    导电结构及其制造方法,阵列基板

    公开(公告)号:US20160276369A1

    公开(公告)日:2016-09-22

    申请号:US14744308

    申请日:2015-06-19

    Abstract: The present invention discloses a conductive structure, a method of manufacturing the conductive structure, and an array substrate. The method of manufacturing the conductive structure, comprising steps of: Forming a barrier metal film and a copper metal film in this order on a substrate, wherein the copper metal film being laminated on the barrier metal film; forming a preset photoresist pattern on the copper metal film; etching the barrier metal film and the copper metal film; oxidizing an exposed sidewall of the etched barrier metal film and an exposed sidewall of the etched copper metal film, so as to generate metal oxide layers on the exposed sidewall of the etched barrier metal film and the exposed sidewall of the etched copper metal film, respectively; and stripping off the photoresist pattern by means of a photoresist stripping liquid. In the method of manufacturing the conductive structure according to embodiments of the present invention, the exposed sidewall of the conductive structure is oxidized to generate a uniform metal oxidization layer on the exposed sidewall before removing the photoresist from the conductive structure by a wet stripping process. In this way, it can effectively prevent the interfaces between the copper metal film and the barrier metal film from being separated during performing the wet stripping process.

    Abstract translation: 本发明公开了导电结构体,导电结构体的制造方法以及阵列基板。 制造导电结构体的方法包括以下步骤:在衬底上依次形成阻挡金属膜和铜金属膜,其中所述铜金属膜层压在所述阻挡金属膜上; 在铜金属膜上形成预设的光刻胶图案; 蚀刻阻挡金属膜和铜金属膜; 氧化蚀刻的阻挡金属膜的暴露的侧壁和蚀刻的铜金属膜的暴露的侧壁,以分别在蚀刻的阻挡金属膜的暴露的侧壁和蚀刻的铜金属膜的暴露的侧壁上分别产生金属氧化物层 ; 并通过光致抗蚀剂剥离液体剥离光刻胶图案。 在根据本发明的实施例的制造导电结构的方法中,通过湿剥离工艺从导电结构去除光致抗蚀剂之前,将导电结构的暴露的侧壁氧化,以在暴露的侧壁上产生均匀的金属氧化层。 以这种方式,可以有效地防止在执行湿剥离工艺期间铜金属膜与阻挡金属膜之间的界面分离。

    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20210167220A1

    公开(公告)日:2021-06-03

    申请号:US16063743

    申请日:2017-12-12

    Abstract: Provided are a thin film transistor and method for manufacturing the same, array substrate, display panel and display device. The thin film transistor includes: a gate pattern, a gate insulating layer, an active layer pattern, a source pattern and a drain pattern sequentially stacked. At least one of a surface of the source pattern facing the gate insulating layer, a surface of the drain pattern facing the gate insulating layer, and a surface of the gate pattern facing the gate insulating layer is a target surface which can diffusely reflecting lights entering the target surface, to prevent part of the lights from entering the active layer pattern. The display device solves the problem of volt-ampere characteristic curve of the active layer pattern being deflected and a normal operation of the thin film transistor being affected, thereby weakening the influence of lights on the normal operation of thin film transistor.

    ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, DISPLAY PANEL

    公开(公告)号:US20200335523A1

    公开(公告)日:2020-10-22

    申请号:US16096587

    申请日:2018-03-12

    Abstract: An array substrate, a manufacturing method thereof, and a display panel are provided. The array substrate comprises a base substrate, a plurality of gate lines and gate electrodes on the base substrate, each gate electrode being corresponding to and separate from a respective gate line, a gate insulating layer over the gate electrode and the gate line, the gate insulating layer having a first via hole and a second via hole, the first via hole exposing the gate electrode, the second via hole exposing the gate line, a conductive connection layer and a polysilicon semiconductor layer on the gate insulating layer, the conductive connection layer filling the first via hole and the second via hole to connect the gate line with the gate electrode.

    MANUFACTURING METHOD OF ARRAY SUBSTRATE, ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20200019030A1

    公开(公告)日:2020-01-16

    申请号:US16335837

    申请日:2018-07-05

    Inventor: Binbin Cao

    Abstract: The present disclosure discloses a manufacturing method of an array substrate, an array substrate, a display panel and a display device. The manufacturing method comprises: forming a shielding layer on a base substrate, wherein the shielding layer absorbs light and is made of photoresist; and forming a transistor device layer on the base substrate on which the shielding layer is formed, wherein an orthographic projection of a conductor in the transistor device layer on the base substrate is within an orthographic projection of the shielding layer on the base substrate. The shielding layer can prevent external light from irradiating the conductor in the transistor device layer, and can absorb external light. In addition, the manufacturing process is simple.

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