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公开(公告)号：US20210408183A1
公开(公告)日：2021-12-30
申请号：US17342596
申请日：2021-06-09
Inventor： Wei Li , Bin Zhou , Shengping Du , Qinghua Guo , Tao Sun , Wei Song , Liangchen Yan
Abstract: A display panel includes a substrate, and a pixel defining layer and a cathode layer that are laminated on the substrate. The pixel defining layer includes a plurality of strip-shaped first pixel defining structures and a plurality of strip-shaped second pixel defining structures. A slope angle of the second pixel defining structure is greater than a slope angle of the first pixel defining structure, and the second pixel defining structure is configured to separate portions of the cathode layer on two sides of the second pixel defining structure.
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公开(公告)号：US11189646B2
公开(公告)日：2021-11-30
申请号：US16580320
申请日：2019-09-24
Applicant: BOE Technology Group Co., Ltd.
Inventor： Luke Ding , Jingang Fang , Bin Zhou , Ning Liu , Guangyao Li
IPC: H01L27/12 , H01L21/027 , H01L49/02 , H01L29/786
Abstract: A display substrate, a method for manufacturing the same, and a display device are disclosed. The display substrate includes: a base substrate; and a conductive pattern, a first insulating layer and a conductive layer laminated on the base substrate, wherein the first insulating layer has a plurality of first via holes, and the conductive layer includes a signal line, the signal line being electrically connected to the conductive pattern through the plurality of first via holes. The present disclosure may achieve efficient transmission of signals and ensure the display effect of the display device.
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公开(公告)号：US20210359140A1
公开(公告)日：2021-11-18
申请号：US16331008
申请日：2018-08-17
Inventor： Yingbin Hu , Ce Zhao , Dongfang Wang , Bin Zhou , Jun Liu , Yuankui Ding , Wei Li
IPC: H01L29/786 , H01L27/12 , H01L29/66
Abstract: A thin film transistor includes an active layer, a source electrode and a drain electrode. The active layer includes a conductive region and the conductive region is between the source electrode and the drain electrode and is spaced apart from at least one of the source electrode and the drain electrode.
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公开(公告)号：US10978539B2
公开(公告)日：2021-04-13
申请号：US16456619
申请日：2019-06-28
Inventor： Jun Liu , Liangchen Yan , Bin Zhou , Jun Wang , Tongshang Su , Biao Luo , Yang Zhang
Abstract: An array substrate includes a base substrate, a transistor on the base substrate, a planarization layer on a side of the transistor away from the base substrate, a recessed portion on the planarization layer, and a light blocking portion in the recessed portion. The light blocking portion is configured to prevent a light from being incident upon an active layer.
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公开(公告)号：US10916568B2
公开(公告)日：2021-02-09
申请号：US15777118
申请日：2017-09-26
Abstract: A manufacturing method of a display substrate, an array substrate and a display device are provided. The method includes forming a first wire, a first insulation layer, a first and second metal layer, and a photoresist layer; forming a photoresist retained pattern above the first wire; forming a second and first metal layer retained pattern under the photoresist retained pattern; forming a second insulation layer with a thickness less than or equal to a sum of thicknesses of the first and second metal layer; the second insulation layer forming a fracture region at a boundary between a part covering the first insulation layer and another part covering the second metal layer retained pattern; removing the first and second metal layer retained patterns by a wet etch process to expose the first insulation layer; and forming a contact hole exposing the first wire.
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Patent Agency Ranking
16.发明申请公开(公告)号：US20200091199A1
公开(公告)日：2020-03-19
申请号：US16395660
申请日：2019-04-26
Inventor： Wei Song , Ce Zhao , Bin Zhou , Dongfang Wang , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
IPC: H01L27/12 , H01L29/786 , H01L29/66 , H01L29/40 , H01L21/3213
Abstract: A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.
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17.发明申请公开(公告)号：US20200075773A1
公开(公告)日：2020-03-05
申请号：US16403860
申请日：2019-05-06
Inventor： Yang Zhang , Luke Ding , Bin Zhou , Haitao Wang , Ning Liu , Jingang Fang , Yongchao Huang , Liangchen Yan
IPC: H01L29/786 , H01L27/12 , H01L29/66
Abstract: A thin film transistor, a method of manufacturing the same, an array substrate and a display panel are disclosed. The thin film transistor includes a light blocking layer, an electrode layer, and a combination layer, which are sequentially stacked. The electrode layer includes a gate electrode, a source electrode and a drain electrode which are separated from one another, and the gate electrode is located between the source electrode and the drain electrode. The light blocking layer includes a first portion of which an orthogonal projection is located between an orthogonal projection of the gate electrode and an orthogonal projection of the source electrode; and a second portion of which an orthogonal projection is located between the orthogonal projection of the gate and an orthogonal projection of the drain. The combination layer includes an active layer.
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公开(公告)号：US20200035767A1
公开(公告)日：2020-01-30
申请号：US16436201
申请日：2019-06-10
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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19.发明申请公开(公告)号：US20200013867A1
公开(公告)日：2020-01-09
申请号：US16397386
申请日：2019-04-29
Inventor： Tongshang SU , Dongfang Wang , Ce Zhao , Bin Zhou , Liangchen Yan
IPC: H01L29/45 , H01L27/12 , H01L29/24 , H01L29/786 , H01L21/02 , H01L21/441 , H01L21/467 , H01L21/4763 , H01L29/66 , G03F7/16 , G03F7/20 , G03F7/26
Abstract: The present disclosure provides a thin film transistor, including a base substrate, an active layer and a source/drain, and a conductive layer. The active layer and an outer edge of the conductive layer are formed in the same etching process. The present disclosure further provides a method for manufacturing a thin film transistor, including forming an active material layer and a conductive material layer, forming a photoresist on the conductive material layer, exposing and developing the photoresist by means of a halftone mask, removing segments of the active material layer and the conductive material layer corresponding to a photoresist completely-removed region by a same etching process, partially removing the photoresist in a photoresist completely-retained region and completely removing the photoresist in a photoresist partially-retained region, and removing a segment of the conductive material layer corresponding to the photoresist partially-retained region.
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公开(公告)号：US20190043996A1
公开(公告)日：2019-02-07
申请号：US15991535
申请日：2018-05-29
Inventor： Jun Liu , Wei Li , Bin Zhou , Tongshang Su , Jingang Fang , Yang Zhang
IPC: H01L29/786 , H01L29/417 , H01L27/12 , G09G3/3225
Abstract: An array substrate, preparation method thereof, display panel and display device are provided. The array substrate includes a base substrate and a plurality of thin film transistors distributed on the base substrate in an array. Each thin film transistor includes: a light-shielding block formed on the base substrate and provided with a first groove of which an opening direction is away from the base substrate; a buffer layer formed on one side of the light-shielding block away from the base substrate, a region of the buffer layer corresponding to the first groove being disposed with a second groove of which an opening direction is away from the base substrate; and a channel layer formed in the second groove. The structure uses bulges on two sides of the first groove to shield the light rays in regions without the thin film transistor, thereby improving the stability of the thin film transistor.
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