公开(公告)号：US20210384041A1

公开(公告)日：2021-12-09

申请号：US17406183

申请日：2021-08-19

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, JR.

IPC: H01L21/322 ,  H01L21/263

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

公开(公告)号：US20210375590A1

公开(公告)日：2021-12-02

申请号：US17401870

申请日：2021-08-13

Applicant: APPLIED Materials, Inc.

Inventor： Vikram M. Bhosle ,  Christopher J. Leavitt ,  Guillermo Colom ,  Timothy J. Miller

IPC: H01J37/32 ,  H01L21/265 ,  C23C14/48 ,  H01J37/317

Abstract: An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.

公开(公告)号：US11501972B2

公开(公告)日：2022-11-15

申请号：US16935774

申请日：2020-07-22

Applicant: Applied Materials, Inc.

Inventor： Vikram M. Bhosle ,  Nicholas P. T. Bateman ,  Timothy J. Miller ,  Jun Seok Lee ,  Deven Raj Mittal

IPC: H01L21/311 ,  H01L21/265 ,  C23C14/02 ,  C23C14/48 ,  H01L21/02

Abstract: An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.