Plasma processing apparatus and techniques

    公开(公告)号:US11615945B2

    公开(公告)日:2023-03-28

    申请号:US17401870

    申请日:2021-08-13

    Abstract: An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.

    Rotary union with mechanical seal assembly

    公开(公告)号:US11217433B2

    公开(公告)日:2022-01-04

    申请号:US16152928

    申请日:2018-10-05

    Abstract: Disclosed is a rotary union including an inner shaft, wherein the inner shaft is rotatable and includes an internal channel operable to deliver a cryogenic fluid to a platen. The rotary union may further include a rotary union shaft surrounding the inner shaft, and a seal assembly coupled to the rotary union shaft. The seal assembly may include a support, a metal bellows extending around an exterior of the support, and a seal support coupled to the metal bellows, wherein the seal support extends around the support. The seal assembly may further include a non-rotating seal component seated in the seal support, and a rotating seal component in abutment with the non-rotating seal component to create a mechanical seal therebetween.

    Plasma processing apparatus and techniques

    公开(公告)号:US11120973B2

    公开(公告)日:2021-09-14

    申请号:US16409242

    申请日:2019-05-10

    Abstract: An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.

    PLASMA PROCESSING APPARATUS AND TECHNIQUES

    公开(公告)号:US20210375590A1

    公开(公告)日:2021-12-02

    申请号:US17401870

    申请日:2021-08-13

    Abstract: An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.

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