公开(公告)号：US20180331328A1

公开(公告)日：2018-11-15

申请号：US15613667

申请日：2017-06-05

Applicant: Applied Materials, Inc.

Inventor： Tae Kyung WON ,  Soo Young CHOI ,  Sanjay D. YADAV ,  Carl A. SORENSEN ,  Chien-Teh KAO ,  Suhail ANWAR ,  Young Dong LEE

IPC: H01L51/56 ,  H01L51/52 ,  H01L51/00

CPC classification number: H01L51/56 ,  H01L51/0035 ,  H01L51/0097 ,  H01L51/5203 ,  H01L51/5253 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/5338

Abstract: Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.