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    METHOD AND SYSTEM FOR CLEANING A PROCESS CHAMBER
    12.
    发明申请
    METHOD AND SYSTEM FOR CLEANING A PROCESS CHAMBER 有权

    公开(公告)号：US20230128297A1

    公开(公告)日：2023-04-27

    申请号：US18083301

    申请日：2022-12-16

    Applicant: Applied Materials, Inc.

    Inventor： Kalyanjit GHOSH ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ZHOU ,  Amit Kumar BANSAL ,  Sanjeev BALUJA

    IPC: H01J37/32 ,  H01L21/67

    Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

    HIGH TEMPERATURE FACE PLATE FOR DEPOSITION APPLICATION
    14.
    发明申请
    HIGH TEMPERATURE FACE PLATE FOR DEPOSITION APPLICATION 有权

    公开(公告)号：US20220119950A1

    公开(公告)日：2022-04-21

    申请号：US17646176

    申请日：2021-12-28

    Applicant: Applied Materials, Inc.

    Inventor： Amit Kumar BANSAL ,  Saket RATHI ,  Tuan Anh NGUYEN

    IPC: C23C16/455

    Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.

    EXTERNAL SUBSTRATE ROTATION IN A SEMICONDUCTOR PROCESSING SYSTEM
    18.
    发明申请
    EXTERNAL SUBSTRATE ROTATION IN A SEMICONDUCTOR PROCESSING SYSTEM 审中-公开
    半导体加工系统中的外部基板旋转

    公开(公告)号：US20160315000A1

    公开(公告)日：2016-10-27

    申请号：US15091260

    申请日：2016-04-05

    Applicant: Applied Materials, Inc.

    Inventor： Tuan Anh NGUYEN ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ

    IPC: H01L21/67 ,  H01L21/02 ,  H01L21/66 ,  H01L21/687

    CPC classification number: H01L21/67184 ,  H01L21/0226 ,  H01L21/67173 ,  H01L21/68742 ,  H01L21/68792 ,  H01L22/12

    Abstract: A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.

    Abstract translation: 本文公开了一种用于处理半导体的方法和装置。 在一个实施例中，公开了一种用于半导体处理的处理系统。 处理室包括两个传送室，处理室和旋转模块。 处理室耦合到传送室。 旋转模块位于传送室之间。 旋转模块被配置为旋转衬底。 传送室被配置为在处理室和传送室之间传送衬底。 在另一个实施例中，本文公开了一种用于处理设备上的衬底的方法。

    TEMPERATURE MEASUREMENT IN MULTI-ZONE HEATER
    19.
    发明申请
    TEMPERATURE MEASUREMENT IN MULTI-ZONE HEATER 审中-公开
    多区加热器温度测量

    公开(公告)号：US20150371881A1

    公开(公告)日：2015-12-24

    申请号：US14761214

    申请日：2014-02-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Dale R. DU BOIS ,  Bozhi YANG ,  Jianhua ZHOU ,  Sanjeev BALUJA ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ

    IPC: H01L21/67 ,  G01K13/00 ,  H01L21/687 ,  G01K7/16 ,  G01K1/08 ,  G01K7/02 ,  G01K1/14

    CPC classification number: H01L21/67248 ,  G01K1/08 ,  G01K1/14 ,  G01K7/02 ,  G01K7/16 ,  G01K13/00 ,  H01L21/68742 ,  H01L21/68792

    Abstract: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.

    Abstract translation: 本公开的实施例通常提供用于在各个位置监视一个或多个工艺参数（例如衬底支撑件的温度）的装置和方法。 本公开的一个实施例提供了用于测量处理室中的一个或多个参数的传感器列。 传感器柱包括用于接触正被测量的腔室部件的尖端，具有从第一端和第二端延伸的内部容积的保护管，其中尖端附接到保护管的第一端并将保护管密封在 第一端和设置在尖端附近的传感器。 保护管的内部容积容纳传感器的连接器，并且尖端在操作期间通过处理室的开口定位在处理室中。

    BOTTOM AND SIDE PLASMA TUNING HAVING CLOSED LOOP CONTROL
    20.
    发明申请
    BOTTOM AND SIDE PLASMA TUNING HAVING CLOSED LOOP CONTROL 审中-公开
    具有闭环控制的底部和侧面等离子体调谐

    公开(公告)号：US20140087489A1

    公开(公告)日：2014-03-27

    申请号：US14033947

    申请日：2013-09-23

    Applicant: Applied Materials, Inc.

    Inventor： Juan Carlos ROCHA-ALVAREZ ,  Amit Kumar BANSAL ,  Ganesh BALASUBRAMANIAN ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Mohamad A. AYOUB ,  Jian J. CHEN

    IPC: H01L21/30

    CPC classification number: H01L21/30 ,  H01J37/32091 ,  H01J37/32532

    Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.

    Abstract translation: 提供了一种用于等离子体处理衬底的装置。 该装置包括处理室，设置在处理室中的基板支撑件和联接到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器。 调谐电极可以设置在导电气体分配器和腔体之间，用于调节等离子体的接地路径。 第二调谐电极可以耦合到衬底支撑件，并且偏置电极也可以耦合到衬底支撑件。

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