公开(公告)号：US20140256148A1

公开(公告)日：2014-09-11

申请号：US14284088

申请日：2014-05-21

Applicant: Applied Materials, Inc.

Inventor： Roy C. NANGOY ,  Saravjeet SINGH ,  Jon C. FARR ,  Sharma V. PAMARTHY ,  Ajay KUMAR

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/45508 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32458 ,  H01L21/30655 ,  H01L21/67069

Abstract: Embodiments of the present disclosure relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present disclosure provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.

Abstract translation: 本公开的实施例涉及用于向具有改进的等离子体解离效率的处理室提供处理气体的方法和装置。 本公开的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体的外部主体。 处理气体通过暴露于等离子体产生的电源的延伸体积流到处理室。

公开(公告)号：US20140253887A1

公开(公告)日：2014-09-11

申请号：US14199626

申请日：2014-03-06

Applicant: Applied Materials, Inc.

Inventor： Banqiu WU ,  Ajay KUMAR

IPC: G03F7/20

CPC classification number: G03F7/70925 ,  G03F1/82

Abstract: Embodiments of the present invention provide methods and apparatus for removing debris particles using a stream of charged species. In one embodiment, an apparatus for removing debris particles from a beam of radiation includes a mask station comprising a chamber body, a mask stage disposed in the mask station, and a conductive plate having an opening formed therein, wherein the conductive plate is disposed in a spaced apart relationship to the mask stage in the mask station, defining an interior volume between the mask stage and the conductive plate.

Abstract translation: 本发明的实施例提供了使用带电物质流去除碎屑颗粒的方法和装置。 在一个实施例中，用于从辐射束去除碎屑颗粒的装置包括掩模站，其包括室主体，设置在掩模站中的掩模台以及其中形成有开口的导电板，其中导电板设置在 与掩模台中的掩模台间隔开的关系，限定掩模台和导电板之间的内部空间。

公开(公告)号：US20160329210A1

公开(公告)日：2016-11-10

申请号：US15216951

申请日：2016-07-22

Applicant: Applied Materials, Inc.

Inventor： Zhigang MAO ,  Xiaoyi CHEN ,  Amitabh SABHARWAL ,  Ajay KUMAR

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  C23F4/00 ,  G03F1/00 ,  G03F1/24 ,  G03F1/54 ,  G03F1/80 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/67069

Abstract: Embodiments of the present invention provides methods to etching a mask layer, e.g., an absorber layer, disposed in a film stack for manufacturing a photomask in EUV applications and phase shift and binary photomask applications. In one embodiment, a method of etching an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having a chromium containing layer partially exposed through a patterned photoresist layer, providing an etching gas mixture including Cl2, O2 and at least one hydrocarbon gas in to a processing chamber, wherein the Cl2 and O2 is supplied at a Cl2:O2 ratio greater than about 9, supplying a RF source power to form a plasma from the etching gas mixture, and etching the chromium containing layer through the patterned photoresist layer in the presence of the plasma.

Abstract translation: 本发明的实施例提供了在EUV应用和相移和二进制光掩模应用中蚀刻设置在膜堆叠中用于制造光掩模的掩模层（例如吸收层）的方法。 在一个实施例中，蚀刻设置在光掩模上的吸收层的方法包括将膜堆叠转移到蚀刻室中，所述膜堆叠具有通过图案化的光致抗蚀剂层部分暴露的含铬层，提供包括Cl 2，O 2的蚀刻气体混合物 和至少一种烃气体输送到处理室中，其中Cl 2和O 2以大于约9的Cl 2：O 2比供应，提供RF源功率以从蚀刻气体混合物形成等离子体，并且蚀刻含铬 在等离子体存在下穿过图案化的光致抗蚀剂层。