Abstract:
A small-spot imaging, spectrometry instrument for measuring properties of a sample has a polarization-scrambling element, such as a birefringent plate depolarizer, incorporated between the polarization-introducing components of the system, such as the beamsplitter, and the microscope objective of the system. The plate depolarizer varies polarization with wavelength, and may be a Lyot depolarizer with two plates, or a depolarizer with more than two plates (such as a three-plate depolarizer). Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent, the perturbation may be narrower than the wavelength resolution of the instrument.
Abstract:
A small-spot imaging, spectrometry instrument for measuring properties of a sample has a polarization-scrambling element, such as a birefringent plate depolarizer, incorporated between the polarization-introducing components of the system, such as the beamsplitter, and the microscope objective of the system. The plate depolarizer varies polarization with wavelength, and may be a Lyot depolarizer with two plates, or a depolarizer with more than two plates (such as a three-plate depolarizer). Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent, the perturbation may be narrower than the wavelength resolution of the instrument.
Abstract:
An aperture for reducing tilt sensitivity in normal incidence optical metrology is formed to include one or more holes. The aperture is positioned to partially occlude one-half of the pupil of a normal incidence objective. A probe beam is projected to fill the pupil of the objective. The portion of the incident probe beam that passes through the aperture is reduced in cross-sectional profile. As a result, after reflection by the sample, that portion of the probe beam underfills the non-occluded portion of the pupil. The portion of the incident probe beam that passes through the non-occluded portion of the pupil overfills the occluded pupil upon reflect by the sample. The combination of underfilling and overfilling reduces the sensitivity of the objective to tilting of the sample.
Abstract:
A notch or flat sensor for a semiconductor wafer on a wafer stage or support includes a dual photodiode detector arrangement located at the edge position of the wafer. Each photodiode element has substantially equal coverage of the wafer edge when the wafer's notch or flat is not proximate to the detector, but has different coverage from the other photodiode when the notch or flat is proximate to the detector. A light source illuminates the edge of the wafer opposite the detector arrangement. Comparison of the light intensity sensed by each photodiode, e.g. by means of a differential amplifier circuit and threshold sensor, reveals the position of the notch or flat.
Abstract:
Achromatic optics may be employed in spectroscopic measurement systems. The achromatic optics comprises a spherical mirror receiving a beam of radiation in a direction away from its axis and a pair of lenses: a positive lens and a negative meniscus lens. The negative meniscus lens corrects for the spherical aberration caused by off-axis reflection from the spherical mirror. The positive lens compensates for the achromatic aberration introduced by the negative lens so that the optics, as a whole, is achromatic over visible and ultraviolet wavelengths. Preferably, the two lenses combined have zero power or close to zero power. By employing a spherical mirror, it is unnecessary to employ ellipsoidal or paraboloidal mirrors with artifacts of diamond turning which limit the size of the spot of the sample that can be measured in ellipsometry, reflectometry or scatterometry.
Abstract:
An improved method and apparatus for measuring the relative reflectance spectra of an observed sample (3) and method and apparatus for autofocussing the sample (3). A broadband visible and ultraviolet beam (42) is split into a sample beam (46) and a reference beam (48). The sample beam (46) is reflected off the surface of the sample (3), and the spectrum of the reflected sample beam (46) is compared to the spectrum of the reference beam (48) to determine the relative reflectance spectrum of the sample (3). A video camera (96) is provided for viewing the sample (3). The autofocus system has a course-focus mode and a fine-focus mode. In the course-focus mode, the sample (3) is focused when the centroid of the sample image is centered on a position sensitive detector (99). In the fine-focus mode, the sample is focused when the intensity of light reaching the detector (99) is minimized.
Abstract:
An optical measurement system for evaluating a sample has a motor-driven rotating mechanism coupled to an azimuthally rotatable measurement head, allowing the optics to rotate with respect to the sample. A polarimetric scatterometer, having optics directing a polarized illumination beam at non-normal incidence onto a periodic structure on a sample, can measure optical properties of the periodic structure. An E-O modulator in the illumination path can modulate the polarization. The head optics collect light reflected from the periodic structure and feed that light to a spectrometer for measurement. A beamsplitter in the collection path can ensure both S and P polarization from the sample are separately measured. The measurement head can be mounted for rotation of the plane of incidence to different azimuthal directions relative to the periodic structures. The instrument can be integrated within a wafer process tool in which wafers may be provided at arbitrary orientation.
Abstract:
A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.
Abstract:
A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.
Abstract:
An optical measurement system for evaluating a sample has a motor-driven rotating mechanism coupled to an azimuthally rotatable measurement head, allowing the optics to rotate with respect to the sample. A polarimetric scatterometer, having optics directing a polarized illumination beam at non-normal incidence onto a periodic structure on a sample, can measure optical properties of the periodic structure. An E-O modulator in the illumination path can modulate the polarization. The head optics collect light reflected from the periodic structure and feed that light to a spectrometer for measurement. A beamsplitter in the collection path can ensure both S and P polarization from the sample are separately measured. The measurement head can be mounted for rotation of the plane of incidence to different azimuthal directions relative to the periodic structures. The instrument can be integrated within a wafer process tool in which wafers may be provided at arbitrary orientation.