公开(公告)号：US11462643B2

公开(公告)日：2022-10-04

申请号：US17091959

申请日：2020-11-06

Applicant: Acorn Semi, LLC

Inventor： Paul A. Clifton ,  Andreas Goebel ,  Walter A. Harrison

IPC: H01L29/00 ,  H01L29/786 ,  B82Y10/00 ,  H01L29/417 ,  H01L29/775 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423

Abstract: A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.

公开(公告)号：US20210119009A1

公开(公告)日：2021-04-22

申请号：US17247803

申请日：2020-12-23

Applicant: Acorn Semi, LLC

Inventor： Walter A. Harrison ,  Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC: H01L29/47 ,  H01L21/283 ,  H01L21/285 ,  H01L29/45 ,  H01L21/324 ,  H01L29/04 ,  H01L29/161

Abstract: Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.