公开(公告)号：US09318383B2

公开(公告)日：2016-04-19

申请号：US14923957

申请日：2015-10-27

Applicant: Applied Materials, Inc.

Inventor： Mehul B. Naik ,  Abhijit Basu Mallick ,  Kiran V. Thadani ,  Zhenjiang Cui

IPC: H01L21/44 ,  H01L21/768

CPC classification number: H01L21/76885 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.

公开(公告)号：US09184093B2

公开(公告)日：2015-11-10

申请号：US14180098

申请日：2014-02-13

Applicant: Applied Materials, Inc.

Inventor： Mehul B. Naik ,  Abhijit Basu Mallick ,  Kiran V. Thadani ,  Zhenjiang Cui

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76885 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.

Abstract translation: 本发明的实施例一般涉及用于形成金属结构和钝化层的方法。 在一个实施例中，在衬底上形成金属柱。 金属柱掺杂有锰，铝，锆或铪。 介电材料沉积在金属柱之上和之间，然后固化以在金属柱的垂直表面上形成钝化层。

公开(公告)号：US08921235B2

公开(公告)日：2014-12-30

申请号：US13834508

申请日：2013-03-15

Applicant: Applied Materials Inc.

Inventor： Kiran V. Thadani ,  Jingjing Xu ,  Abhijit Basu Mallick ,  Joe Griffith Cruz ,  Nitin K. Ingle ,  Pravin K. Narwankar

IPC: H01L21/00 ,  H01L21/20

CPC classification number: H01L21/2015 ,  C23C16/045 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

Abstract: A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.

Abstract translation: 在衬底上形成和控制相邻凸起特征之间的空气间隙的方法包括：使用可流动沉积工艺在邻近凸起特征之间的底部区域中形成含硅膜。 该方法还包括在含硅膜的顶部上形成含碳材料，并使用可流动的沉积工艺在含碳材料上形成第二膜。 第二膜填充相邻凸起特征之间的上部区域。 该方法还包括在升高的温度下固化材料一段时间以形成相邻凸起特征之间的气隙。 膜的厚度和数量层可用于控制厚度，垂直位置和气隙数量。