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    Global Shutter Pixel with Vertically Integrated Multi-Phase Charge Transfer
    11.
    发明公开
    Global Shutter Pixel with Vertically Integrated Multi-Phase Charge Transfer 审中-公开

    公开(公告)号：US20240236525A1

    公开(公告)日：2024-07-11

    申请号：US18326940

    申请日：2023-05-31

    Applicant: Apple Inc.

    Inventor： Jiaju Ma ,  Arnaud Laflaquiere

    IPC: H04N25/75

    CPC classification number: H04N25/75

    Abstract: An image sensor may include a plurality of pixels, each of which may include a photodiode having a charge accumulation region (“PD”), a floating diffusion region (“FD”), and a charge transfer region vertically between the PD and FD. The vertical charge transfer region may include a first charge modulation region (“P1”), a second charge modulation region (“P2”), and a third charge modulation region (“P3”). The image sensor may operate in a global shutter mode, in which the P2 may be used as an in-pixel charge memory region to temporarily store charge during transfer of the charge from PD to FD via P1, P2, and P3.

    PHOTONIC CRYSTAL SURFACE-EMITTING LASER DIODES AND RELATED DEVICES FOR SELF-MIXING INTERFERENCE OR FREQUENCY MODULATED CONTINUOUS WAVE SENSING
    14.
    发明申请
    PHOTONIC CRYSTAL SURFACE-EMITTING LASER DIODES AND RELATED DEVICES FOR SELF-MIXING INTERFERENCE OR FREQUENCY MODULATED CONTINUOUS WAVE SENSING 有权

    公开(公告)号：US20250102628A1

    公开(公告)日：2025-03-27

    申请号：US18763961

    申请日：2024-07-03

    Applicant: Apple Inc.

    Inventor： Fei Tan ,  Pengfei Qiao ,  Alexander Hein ,  Chin Han Lin ,  Tong Chen ,  Takashi Hosoda ,  Arnaud Laflaquiere

    IPC: G01S7/481 ,  G01S17/89 ,  H01S5/11 ,  H01S5/183 ,  H01S5/34 ,  H01S5/42

    Abstract: Disclosed herein are self-mixing interference (SMI) sensors, frequency modulated continuous wave (FMCW) sensors, and electronic devices that include SMI and FMCW sensors. Both types of sensors include a photonic crystal surface-emitting laser diode. The SMI sensors include a photonic crystal surface-emitting laser diode configured to undergo SMI between a primary emitted light from the photonic crystal surface-emitting laser diode and reflections thereof from an object. The SMI sensor includes a photodetector configured to receive a secondary light emission from the photonic crystal surface-emitting laser diode and detect a parameter related to the SMI, from which distance or motion to the object may be inferred. The FMCW sensors include a photonic crystal surface-emitting laser diode configured to emit a primary light emission toward the object and a secondary light emission toward a light beam combiner. The light beam combiner also receives reflections from the object and detects distances and/or motion of the object based on the frequency modulations of the two light beams.

    Self-mixing interference device for sensing applications
    17.
    发明授权
    Self-mixing interference device for sensing applications 有权

    公开(公告)号：US11549799B2

    公开(公告)日：2023-01-10

    申请号：US16913645

    申请日：2020-06-26

    Applicant: Apple Inc.

    Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

    IPC: G01B9/02 ,  G01B9/02097 ,  H01S5/026 ,  H01S5/343 ,  H01S5/183 ,  H01S5/30 ,  G01B11/02 ,  G01S17/34 ,  G01S7/4912

    Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

    Vertical emitters with integral microlenses
    18.
    发明授权
    Vertical emitters with integral microlenses 有权

    公开(公告)号：US11469573B2

    公开(公告)日：2022-10-11

    申请号：US16779609

    申请日：2020-02-02

    Applicant: Apple Inc.

    Inventor： Keith Lyon ,  Arnaud Laflaquiere

    IPC: H01S5/00 ,  H01S5/183 ,  H01S5/02 ,  H01S5/30 ,  H01S5/42 ,  H01S5/02255 ,  H01S5/026 ,  G02B27/42 ,  H01S5/02253 ,  H01S5/02326

    Abstract: An optoelectronic device includes a semiconductor substrate having first and second faces. A first array of emitters are formed on the first face of the semiconductor substrate and are configured to emit respective beams of radiation through the substrate. Electrical connections are coupled to actuate selectively first and second sets of the emitters in the first array. A second array of microlenses are formed on the second face of the semiconductor substrate in respective alignment with the emitters in at least one of the first and second sets and are configured to focus the beams emitted from the emitters in the at least one of the first and second sets so that the beams are transmitted from the second face with different, respective first and second focal properties.

    Integrated vertical emitter structure having controlled wavelength
    19.
    发明申请
    Integrated vertical emitter structure having controlled wavelength 有权

    公开(公告)号：US20210336422A1

    公开(公告)日：2021-10-28

    申请号：US17228742

    申请日：2021-04-13

    Applicant: Apple Inc.

    Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chinhan Lin ,  Christophe Verove ,  Jae Y Park

    IPC: H01S5/183 ,  H01S5/343 ,  H01S5/042

    Abstract: An optoelectronic device includes: (i) a semiconductor substrate doped with a first level of n-type dopants, (ii) a contact semiconductor layer disposed over the semiconductor substrate and doped with a second level of n-type dopants, larger than the first level, (iii) an upper distributed Bragg-reflector (DBR) stack disposed over the contact semiconductor layer and including alternating first and second epitaxial semiconductor layers having respective first and second indexes of refraction that differ from one another in a predefined wavelength band, (iv) a set of epitaxial layers disposed over the upper DBR, the set of epitaxial layers includes one or more III-V semiconductor materials and defines: (a) a quantum well structure, and (b) a confinement layer, and (v) a lower DBR stack disposed over the set of epitaxial layers, opposite the upper DBR, and including alternating dielectric and semiconductor layers.

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