公开(公告)号：US20180090536A1

公开(公告)日：2018-03-29

申请号：US15713477

申请日：2017-09-22

Applicant: Apple Inc.

Inventor： Shingo Mandai ,  Cristiano L. Niclass ,  Nobuhiro Karasawa ,  Xiaofeng Fan ,  Arnaud Laflaquiere ,  Gennadiy A. Agranov

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/357 ,  H04N5/376

CPC classification number: H01L27/14665 ,  G01S7/4861 ,  G01S7/4863 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L31/02027 ,  H01L31/03529 ,  H01L31/107 ,  H04N5/35572 ,  H04N5/3577 ,  H04N5/3698 ,  H04N5/37452 ,  H04N5/3765 ,  H04N5/378

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

公开(公告)号：US20180090526A1

公开(公告)日：2018-03-29

申请号：US15713520

申请日：2017-09-22

Applicant: Apple Inc.

Inventor： Shingo Mandai ,  Cristiano L. Niclass ,  Nobuhiro Karasawa ,  Xiaofeng Fan ,  Arnaud Laflaquiere ,  Gennadiy A. Agranov

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/369

CPC classification number: H01L27/14665 ,  G01S7/4861 ,  G01S7/4863 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L31/02027 ,  H01L31/03529 ,  H01L31/107 ,  H04N5/35572 ,  H04N5/3577 ,  H04N5/3698 ,  H04N5/37452 ,  H04N5/3765 ,  H04N5/378

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

公开(公告)号：US20200286946A1

公开(公告)日：2020-09-10

申请号：US16876511

申请日：2020-05-18

Applicant: Apple Inc.

Inventor： Shingo Mandai ,  Cristiano L. Niclass ,  Nobuhiro Karasawa ,  Xiaofeng Fan ,  Arnaud Laflaquiere ,  Gennadiy A. Agranov

IPC: H01L27/146 ,  G01S7/4863 ,  H04N5/355 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/376 ,  H04N5/378 ,  H01L31/107 ,  H04N5/369

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

公开(公告)号：US10438987B2

公开(公告)日：2019-10-08

申请号：US15713477

申请日：2017-09-22

Applicant: Apple Inc.

Inventor： Shingo Mandai ,  Cristiano L. Niclass ,  Nobuhiro Karasawa ,  Xiaofeng Fan ,  Arnaud Laflaquiere ,  Gennadiy A. Agranov

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/3745 ,  G01S7/486 ,  H04N5/357 ,  H04N5/376 ,  H04N5/378 ,  H01L31/107 ,  H04N5/369 ,  H01L31/02 ,  H01L31/0352

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

公开(公告)号：US11271031B2

公开(公告)日：2022-03-08

申请号：US16876511

申请日：2020-05-18

Applicant: Apple Inc.

Inventor： Shingo Mandai ,  Cristiano L. Niclass ,  Nobuhiro Karasawa ,  Xiaofeng Fan ,  Arnaud Laflaquiere ,  Gennadiy A. Agranov

IPC: H01L27/146 ,  G01S7/4863 ,  H01L31/107 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/376 ,  H04N5/378 ,  G01S7/4861 ,  H01L31/02 ,  H01L31/0352

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

公开(公告)号：US10658419B2

公开(公告)日：2020-05-19

申请号：US15713520

申请日：2017-09-22

Applicant: Apple Inc.

Inventor： Shingo Mandai ,  Cristiano L. Niclass ,  Nobuhiro Karasawa ,  Xiaofeng Fan ,  Arnaud Laflaquiere ,  Gennadiy A. Agranov

IPC: H01L27/146 ,  G01S7/486 ,  H04N5/357 ,  H04N5/369 ,  H01L31/107 ,  H04N5/355 ,  H04N5/376 ,  H04N5/3745 ,  H04N5/378 ,  H01L31/02 ,  H01L31/0352 ,  G01S7/4861 ,  G01S7/4863

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.