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公开(公告)号：US20200028000A1
公开(公告)日：2020-01-23
申请号：US16528958
申请日：2019-08-01
发明人： Shih-Yuan WANG , Shih-Ping WANG
IPC分类号： H01L31/0236 , H01L27/146 , H01L31/0352 , H01L31/18 , H01L27/144 , H04B10/69 , H01L31/02 , H01L31/0232 , H01L31/09 , H01L31/103 , H01L31/028 , H01L31/107 , H04B10/25 , H04B10/40 , H04B10/80 , G02B1/00 , G02B6/42
摘要： Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
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公开(公告)号：US12094903B2
公开(公告)日：2024-09-17
申请号：US17434382
申请日：2020-09-21
发明人： Shih-Yuan Wang , Shih-Ping Wang
IPC分类号： H01L27/146 , H01L31/107
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/1463 , H01L27/14649 , H01L31/107
摘要： Microstructure enhanced photodector arrangements uses a CMOS image sensor (CIS) wafer of crystalline Si and a CMOS Logic Processor (CLP) wafer stacked on each other for electrical interaction. The wafers can be fabricated separately and stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays are enhanced with microstructure holes. Avalanche photodiodes, single photon avalanche photodiodes and phototransistors can be laterally and/or vertically doped. Photodetectors/photosensors can have slanted sidewalls for improved optical confinement and reduced crosstalk.
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公开(公告)号：US11309444B1
公开(公告)日：2022-04-19
申请号：US17532831
申请日：2021-11-22
发明人： Shih-Yuan Wang , Shih-Ping Wang
IPC分类号： H01L31/0232 , H01L31/0352 , H01L31/075 , H01L31/105 , G02B6/136 , H01L31/028 , H01L31/0224 , H01L31/0312 , H01L31/036 , H01L31/077 , H01L31/18 , H01L31/107 , H01L31/054 , G02B6/122 , H01L23/66 , H01L31/02 , H01L31/0236 , H01L31/024 , H01L31/0304 , H01L31/0745 , G02B6/12
摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
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公开(公告)号：US11121271B2
公开(公告)日：2021-09-14
申请号：US16528958
申请日：2019-08-01
发明人： Shih-Yuan Wang , Shih-Ping Wang
IPC分类号： H01L31/0236 , H01L31/0352 , H01L31/18 , H01L27/144 , H04B10/69 , H01L31/02 , H01L31/0232 , H01L31/09 , H01L31/103 , H01L31/028 , H01L31/107 , H04B10/25 , H04B10/40 , H04B10/80 , G02B1/00 , G02B6/42 , H01L27/146 , H01L31/077 , H01L31/036 , H01L31/075 , H01L31/105
摘要： Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
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公开(公告)号：US09818893B2
公开(公告)日：2017-11-14
申请号：US15309922
申请日：2015-11-17
发明人： Shih-Yuan Wang , Shih-Ping Wang
IPC分类号： H01L31/0236 , H01L31/0352 , H01L27/144 , H01L31/0232 , H01L31/103 , H01L31/107 , H01L31/18 , H04B10/25 , H04B10/40 , H04B10/80 , G02B1/00 , H01L31/09
CPC分类号： H01L31/0236 , G02B1/002 , G02B1/005 , G02B6/42 , H01L27/1443 , H01L27/1446 , H01L27/14625 , H01L31/02 , H01L31/0232 , H01L31/02325 , H01L31/02327 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035218 , H01L31/035281 , H01L31/09 , H01L31/103 , H01L31/107 , H01L31/1075 , H01L31/1804 , H01L31/1808 , H04B10/25 , H04B10/40 , H04B10/691 , H04B10/6971 , H04B10/801 , Y02E10/547 , Y02P70/521
摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.
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公开(公告)号：US09525084B2
公开(公告)日：2016-12-20
申请号：US14945003
申请日：2015-11-18
发明人： Shih-Yuan Wang , Shih-Ping Wang
IPC分类号： H01L31/0236 , H01L27/144 , H01L27/146 , H04B10/69 , H01L31/02 , H01L31/0232 , H01L31/09 , H01L31/103 , H01L31/028 , H01L31/107 , H04B10/25 , H04B10/40 , H04B10/80
CPC分类号： H01L31/0236 , G02B1/002 , G02B1/005 , G02B6/42 , H01L27/1443 , H01L27/1446 , H01L27/14625 , H01L31/02 , H01L31/0232 , H01L31/02325 , H01L31/02327 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035218 , H01L31/035281 , H01L31/09 , H01L31/103 , H01L31/107 , H01L31/1075 , H01L31/1804 , H01L31/1808 , H04B10/25 , H04B10/40 , H04B10/691 , H04B10/6971 , H04B10/801 , Y02E10/547 , Y02P70/521
摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.
摘要翻译： 描述了使用微结构增强半导体中的光子吸收的技术。 诸如孔的微结构有效地增加了光子的吸收。 对于硅光电二极管和硅雪崩光电二极管，使用微结构进行吸收增强可以在波长为850 nm的光子上产生超过10 Gb / s的带宽，量子效率约为90％以上。 它们的厚度尺寸允许它们与CMOS，BiCMOS和其他电子元件方便地集成在同一个Si芯片上，从而实现封装优点，降低电容，从而提高速度。
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公开(公告)号：US11621360B2
公开(公告)日：2023-04-04
申请号：US17707429
申请日：2022-03-29
发明人： Shih-Yuan Wang , Shih-Ping Wang
IPC分类号： H01L31/0352 , H01L31/075 , H01L31/105 , H01L31/028 , H01L31/0224 , H01L31/107 , H01L31/02 , H01L31/0236 , G02B6/136 , H01L31/0312 , H01L31/036 , H01L31/077 , H01L31/18 , H01L31/054 , G02B6/122 , H01L23/66 , H01L31/0232 , H01L31/024 , H01L31/0304 , H01L31/0745 , G02B6/12
摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
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公开(公告)号：US20230054279A1
公开(公告)日：2023-02-23
申请号：US17974325
申请日：2022-10-26
发明人： Shih-Yuan WANG , Shih-Ping Wang
IPC分类号： H01L31/0236 , H01L31/0352 , H01L31/18 , H01L27/144 , H04B10/69 , H01L31/02 , H01L31/0232 , H01L31/09 , H01L31/103 , H01L31/028 , H01L31/107 , H04B10/25 , H04B10/40 , H04B10/80 , G02B1/00 , G02B6/42 , H01L27/146 , H01L31/077 , H01L31/036 , H01L31/075 , H01L31/105
摘要： Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.
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公开(公告)号：US10700225B2
公开(公告)日：2020-06-30
申请号：US16042535
申请日：2018-07-23
发明人： Shih-Yuan Wang , Shih-Ping Wang
IPC分类号： H01L31/0236 , H01L31/107 , G02B1/00 , G02B6/42 , H01L31/18 , H01L31/0352 , H01L27/144 , H01L31/103 , H01L27/146 , H04B10/80 , H04B10/25 , H04B10/40 , H01L31/0232 , H01L31/028 , H01L31/02 , H04B10/69 , H01L31/09 , H01L31/105
摘要： Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
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公开(公告)号：US10446700B2
公开(公告)日：2019-10-15
申请号：US15797821
申请日：2017-10-30
发明人： Shih-Yuan Wang , Shih-Ping Wang , M. Saif Islam
IPC分类号： H01L31/0232 , H01L31/18 , H01L31/0352 , G02B1/00 , H01L31/107 , H01L27/144 , H01L31/103 , H04B10/69 , H01L27/146 , H01L31/028 , H01L31/02 , H01L31/0236 , H01L31/09 , H04B10/80 , H04B10/25 , H04B10/40
摘要： Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
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