公开(公告)号：US07732821B2

公开(公告)日：2010-06-08

申请号：US12073837

申请日：2008-03-11

Applicant: Naohiro Suzuki ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

Inventor： Naohiro Suzuki ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

IPC: H01L29/72

CPC classification number: H01L29/66068 ,  H01L21/0465 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0638 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/7828

Abstract: The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion.

Abstract translation: SiC半导体器件包括由碳化硅制成的第一导电类型的衬底，由碳化硅制成的第一导电类型的漂移层，漂移层比衬底掺杂少，由衬底的一部分构成的单元部分 以及漂移层的一部分，由基板的另一部分和漂移层的另一部分构成的圆周部分，周向部分形成为围绕电池部分，以及形成在第二导电类型的RESURF层 漂移层的表面部分，以便位于圆周部分中。 RESURF层由具有不同杂质浓度的第一和第二RESURF层构成，第二RESURF层与第一RESURF层的外周接触并延伸到电池单元的周围。

公开(公告)号：US07643394B2

公开(公告)日：2010-01-05

申请号：US11150234

申请日：2005-06-13

Applicant: Yutaka Kashihara ,  Hideki Takahashi ,  Akihito Ogawa ,  Yutaka Yamanaka ,  Shigeru Shimonou ,  Tatsunori Ide ,  Tsuyoshi Yamamoto ,  Katsuki Hattori ,  Masato Fuma

Inventor： Yutaka Kashihara ,  Hideki Takahashi ,  Akihito Ogawa ,  Yutaka Yamanaka ,  Shigeru Shimonou ,  Tatsunori Ide ,  Tsuyoshi Yamamoto ,  Katsuki Hattori ,  Masato Fuma

IPC: G11B7/0045

CPC classification number: G11B27/329 ,  G11B7/00736 ,  G11B20/1217 ,  G11B2020/1275 ,  G11B2020/1277 ,  G11B2020/1292 ,  G11B2220/218 ,  G11B2220/2537 ,  G11B2220/2562

Abstract: In an optical disk recording method of recording data onto a recordable optical disk which includes a data zone where data is recorded and a management data zone where management data indicating the recorded part of the data zone is recorded, an extended management data zone in which the management data is to be recorded is set in the data zone in response to an extension instruction.

Abstract translation: 在将数据记录到包括记录数据的数据区的可记录光盘上的数据的光盘记录方法以及记录了表示数据区的记录部分的管理数据的管理数据区的情况下， 将要记录的管理数据设置在响应于扩展指令的数据区中。

公开(公告)号：US20090290223A1

公开(公告)日：2009-11-26

申请号：US12356806

申请日：2009-01-21

Applicant: Hirofumi AOTA ,  Kohei Shibata ,  Tamotsu Akashi ,  Tsuyoshi Yamamoto

Inventor： Hirofumi AOTA ,  Kohei Shibata ,  Tamotsu Akashi ,  Tsuyoshi Yamamoto

IPC: G02B27/30 ,  G02B3/00

CPC classification number: G02B6/29313 ,  G02B6/29311 ,  G02B6/32 ,  G02B6/3512 ,  G02B6/3552 ,  G02B6/356 ,  G02B6/3582 ,  G02B27/30

Abstract: An optical apparatus includes a collimation optical member for collimating and outputting input light, a condensing optical member for condensing light from the collimation optical member and a light blocking mask member provided at a place on an optical path of the input light for light blocking part of the input light, and enhances the degree of freedom in design of an optical system.

Abstract translation: 一种光学装置，包括用于准直和输出输入光的准直光学构件，用于聚集来自准直光学构件的光的聚光光学构件和设置在输入光的光路上的位置处的遮光掩模构件， 输入光，并增强了光学系统的设计自由度。

公开(公告)号：US07616675B2

公开(公告)日：2009-11-10

申请号：US11902622

申请日：2007-09-24

Applicant: Kenichi Kawaguchi ,  Tsuyoshi Yamamoto

Inventor： Kenichi Kawaguchi ,  Tsuyoshi Yamamoto

IPC: H01S5/00

CPC classification number: H01S5/18341 ,  B82Y20/00 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/3027 ,  H01S5/3036 ,  H01S5/3412 ,  H01S2304/04

Abstract: Disclosed is a semiconductor laser device capable of realizing efficient current injection and a method of manufacturing the same. The method includes the steps of: forming a DBR mirror over a Si substrate; forming an n-type conductive layer over the DBR mirror; forming a luminescent layer over a part of the n-type conductive layer; forming an insulating layer over a side surface of the luminescent layer over the n-type conductive layer; forming a p-type conductive layer over the insulating layer and the luminescent layer; forming another DBR mirror over the p-type conductive layer so as to be located immediately above the luminescent layer; forming an electrode electrically connected to the n-type conductive layer; and forming another electrode over the p-type conductive layer.

Abstract translation: 公开了能够实现高效电流注入的半导体激光装置及其制造方法。 该方法包括以下步骤：在Si衬底上形成DBR镜; 在DBR镜上形成n型导电层; 在n型导电层的一部分上形成发光层; 在所述n型导电层的上方在所述发光层的侧面上形成绝缘层; 在绝缘层和发光层上形成p型导体层; 在p型导电层上形成另一个DBR镜，以便位于发光层的正上方; 形成与n型导电层电连接的电极; 并在p型导电层上形成另一电极。

公开(公告)号：US07613502B2

公开(公告)日：2009-11-03

申请号：US11205184

申请日：2005-08-17

Applicant: Yukari Yamamoto ,  Atsushi Maki ,  Masashi Kiguchi ,  Tsuyoshi Yamamoto

Inventor： Yukari Yamamoto ,  Atsushi Maki ,  Masashi Kiguchi ,  Tsuyoshi Yamamoto

IPC: A61B5/00

CPC classification number: A61B5/14553 ,  A61B5/0042 ,  A61B5/064 ,  A61B5/6814 ,  A61B5/7425 ,  A61B5/743 ,  A61B34/20 ,  A61B2034/2051 ,  A61B2034/2055 ,  A61B2034/2063

Abstract: In a probe positioning technology, an optical bioinstrumentation includes a region selecting unit that is used to delineate a region of interest in an anatomical image of a subject, a computing unit that determines a recommended probe position according to the region of interest, a probe position sensor that detects a current probe position, a computing unit that calculates the distance between the recommended probe position and the current probe position, and an alarm device that generates an alarm sound or the like when the distance falls within a predetermined range. Moreover, the optical bioinstrumentation for living body further includes a memory unit in which the probe position is saved together with measurement data.

Abstract translation: 在探针定位技术中，光学生物仪器包括区域选择单元，其用于描绘对象的解剖图像中的感兴趣区域，计算单元，其根据感兴趣的区域确定推荐的探针位置，探针位置 检测当前探头位置的传感器，计算推荐探测位置与当前探测位置之间的距离的计算单元，以及当距离在预定范围内时产生报警声等的报警装置。 此外，生物体的光学生物仪器还包括存储单元，其中探测位置与测量数据一起被保存。

公开(公告)号：US20090263926A1

公开(公告)日：2009-10-22

申请号：US12457677

申请日：2009-06-18

Applicant: Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

Inventor： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

IPC: H01L21/20

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/06226 ,  H01S5/0655 ,  H01S5/3086 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34353 ,  H01S2301/18

Abstract: An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.

公开(公告)号：US20090159963A1

公开(公告)日：2009-06-25

申请号：US12292351

申请日：2008-11-18

Applicant: Hitoshi Yamaguchi ,  Tsuyoshi Yamamoto

Inventor： Hitoshi Yamaguchi ,  Tsuyoshi Yamamoto

IPC: H01L27/06

CPC classification number: H01L29/7815 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/7813 ,  H01L29/7826

Abstract: A semiconductor device includes an insulated gate transistor and a resistor. The insulated gate transistor includes a plurality of first cells for supplying electric current to a load and a second cell for detecting an electric current that flows in the first cells. A gate terminal of the plurality of first cells is coupled with a gate terminal of the second cell and a source terminal of the plurality of first cells is coupled with a source terminal of the second cell on a lower potential side. The resistor has a first terminal coupled with a drain terminal of the second cell and a second terminal coupled with a drain terminal of the first cells on a higher potential side. A gate voltage of the insulated gate transistor is feedback-controlled based on an electric potential of the resistor.

Abstract translation: 半导体器件包括绝缘栅晶体管和电阻器。 绝缘栅晶体管包括用于向负载提供电流的多个第一单元和用于检测在第一单元中流动的电流的第二单元。 所述多个第一单元的栅极端子与所述第二单元的栅极端子耦合，并且所述多个第一单元的源极端子与所述第二单元的源极端子耦合在较低电位侧。 电阻器具有与第二单元的漏极端子耦合的第一端子和与较高电位侧的第一单元的漏极端子耦合的第二端子。 绝缘栅极晶体管的栅极电压基于电阻器的电位进行反馈控制。

公开(公告)号：US20090114174A1

公开(公告)日：2009-05-07

申请号：US12265836

申请日：2008-11-06

Applicant: Yasushi NAKAHARA ,  Hidesaku EBESU ,  Tsuyoshi YAMAMOTO ,  Keiichi TATEISHI

Inventor： Yasushi NAKAHARA ,  Hidesaku EBESU ,  Tsuyoshi YAMAMOTO ,  Keiichi TATEISHI

IPC: F02B75/20

CPC classification number: F02P3/02 ,  F02B2023/085 ,  F02F1/242 ,  F02P13/00 ,  F02P15/02

Abstract: Disclosed is an upper structure of an engine having three or more cylinders arranged in a row. A first one of a pair of adjacent cylinders among at least three of the cylinders serially arranged in a cylinder row direction is provided with a second spark plug at a position on an opposite side of a second one of the pair of adjacent cylinders, and the second one of the pair of adjacent cylinders is provided with a second spark plug at a position on an opposite side of the first one of the pair of adjacent cylinders. The present invention can provide enhanced flexibility in design of a head cover of the engine.

Abstract translation: 公开了具有排列成一行的三个或更多个气缸的发动机的上部结构。 在气缸列方向上串联排列的至少三个气缸中的一对相邻气缸中的第一个在第二个相邻气缸的相对侧的位置上设置有第二火花塞， 所述一对相邻气缸中的第二个在所述一对相邻气缸中的第一个的相对侧上的位置处设置有第二火花塞。 本发明可以提供发动机头盖的设计的增强的灵活性。

公开(公告)号：US07512042B2

公开(公告)日：2009-03-31

申请号：US11181306

申请日：2005-07-14

Applicant: Hitoshi Ogura ,  Tsuyoshi Yamamoto ,  Koji Tsukagoshi ,  Hideki Osawa ,  Yasushi Hanamoto ,  Yasuki Mori

Inventor： Hitoshi Ogura ,  Tsuyoshi Yamamoto ,  Koji Tsukagoshi ,  Hideki Osawa ,  Yasushi Hanamoto ,  Yasuki Mori

IPC: G11B7/00

CPC classification number: G11B7/08511 ,  G11B7/0945 ,  G11B2007/0013

Abstract: In an optical disk recording and reproducing device which uses an optical disk having at least a first recording layer and a second recording layer, a thickness of a spacer section between the first recording layer and the second recording layer is measured, an amount of defocus with respect to the second recording layer is set based on the measured spacer thickness, and a focus servo operation is performed for focusing the laser light irradiated from an optical pickup device on the second recording layer.

Abstract translation: 在使用具有至少第一记录层和第二记录层的光盘的光盘记录和再现装置中，测量第一记录层和第二记录层之间的间隔部分的厚度，散焦量与 基于所测量的间隔物厚度设定相对于第二记录层的聚焦伺服操作，并将从光拾取装置照射的激光聚焦在第二记录层上。

公开(公告)号：US20090052487A1

公开(公告)日：2009-02-26

申请号：US12234161

申请日：2008-09-19

Applicant: Tsuyoshi Yamamoto ,  Manabu Matsuda ,  Mitsuru Ekawa ,  Kan Takada ,  Shigekazu Okumura

Inventor： Tsuyoshi Yamamoto ,  Manabu Matsuda ,  Mitsuru Ekawa ,  Kan Takada ,  Shigekazu Okumura

IPC: H01S5/323

CPC classification number: H01S5/227

Abstract: An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other.

Abstract translation: 一种光学半导体器件，包括有源层，形成在有源层上方并由含有Al的半导体材料制成的第一半导体层，形成在第一半导体层上方的第二半导体层，并由不含任何一种 Al和P，并且其带隙大于有源层的带隙;以及第三半导体层，其形成在第二半导体层上方并由不含Al但包含P的半导体材料制成。第二半导体层形成为 第一半导体层和第三半导体层彼此不接触。