知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

14 records (took 0.012 seconds)

    Optical storage and switching devices using organic charge transfer salts
    11.
    发明授权
    Optical storage and switching devices using organic charge transfer salts 失效
    光存储和开关器件采用有机电荷转移盐

    公开(公告)号：US4731756A

    公开(公告)日：1988-03-15

    申请号：US770443

    申请日：1985-08-29

    Applicant: Richard S. Potember ,  Theodore O. Poehler ,  Richard C. Benson

    Inventor： Richard S. Potember ,  Theodore O. Poehler ,  Richard C. Benson

    IPC: G03C1/73 ,  G11C13/02 ,  G11C13/04 ,  H03K3/40 ,  H03K17/78 ,  G11C11/00

    CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G03C1/73 ,  G11C13/047 ,  H03K17/78 ,  H03K3/40 ,  G11C13/04

    Abstract: Optical devices using an organic charge transfer salt as the switching and storage media are disclosed. Generally, a light beam of a given intensity directed to a film of certain organic charge transfer salts causes the illuminated area to change from a first to a second state. This electrochemical process is reversible with heat energy transforming the illuminated area back into the first state. The first and second states have identifiably different optical and electrical properties. The organic charge transfer salt is used to fabricate an erasable or permanent optical memory and a threshold on bistable optoelectronic switch.

    Abstract translation: 公开了使用有机电荷转移盐作为开关和存储介质的光学器件。 通常，指向某些有机电荷转移盐的膜的给定强度的光束导致照明区域从第一状态变为第二状态。 该电化学过程是可逆的，热能将照明区域转换回第一状态。 第一和第二状态具有可识别的不同的光学和电气特性。 有机电荷转移盐用于制造可擦除或永久的光学存储器和双稳态光电开关的阈值。

    Method of fabricating a current controlled bistable electrical organic thin film switching device
    13.
    发明授权
    Method of fabricating a current controlled bistable electrical organic thin film switching device 失效
    制造电流控制双稳电气有机薄膜开关器件的方法

    公开(公告)号：US4507672A

    公开(公告)日：1985-03-26

    申请号：US385523

    申请日：1982-06-07

    Applicant: Richard S. Potember ,  Theodore O. Poehler ,  Dwaine O. Cowan

    Inventor： Richard S. Potember ,  Theodore O. Poehler ,  Dwaine O. Cowan

    IPC: G11C13/02 ,  H01L45/00 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L29/28

    CPC classification number: H01L51/05 ,  B82Y10/00 ,  G11C13/0014 ,  H01L51/0051

    Abstract: A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between metallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provides switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.Various other modifications, adaptations and alterations are of course possible in light of the above teachings. Therefore, it should be understood at this time that within the scope of the appended claims the invention may be practiced otherwise than as specifically described.

    Abstract translation: 电流控制的双稳态阈值或存储器开关包括夹在金属电极之间的多晶金属 - 有机半导体。 与TNAP，DDQ，TCNE，TCNQ，衍生物TCNQ分子或其他这样的电子受体络合的铜或银的膜提供高阻抗状态和低阻抗状态之间的切换，其组合的延迟和切换时间为1纳秒级。 本发明的复合物的开关行为与受体分子的还原电位有关。 根据上述教导，当然可以进行各种其它修改，改编和改变。 因此，此时应当理解，在所附权利要求的范围内，本发明可以以不同于具体描述的方式实施。

Patent Agency Ranking