公开(公告)号：US06551900B1

公开(公告)日：2003-04-22

申请号：US09547730

申请日：2000-04-12

Applicant: Yifu Chung ,  Leon Chang ,  Ping-Wei Lin

Inventor： Yifu Chung ,  Leon Chang ,  Ping-Wei Lin

IPC: H01L2176

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/42368 ,  H01L29/512 ,  H01L29/66734 ,  H01L29/7813

Abstract: A method for improving gate oxide thinning issue at trench corners is disclosed. The method comprises steps as follows. Firstly, a silicon substrate having a trench therein is provided. HDPCVD technology to form a first oxide layer on the sidewall and the bottom of the trench is carried out. After performing an etchback to leave the first oxide layer on the bottom of the trench, a second oxide layer is formed on the first oxide layer and on sidewalls of the trench by LPCVD technology. Thereafter, an isotropic etching is performed so as to remove a substantially portion of the second oxide layer and leave a remnant portion of second oxide layer on the trench corners. As a consequently, the trench corners are smooth. Finally, a thermal oxidation to form a third oxide layer on the sidewall of the trench is carried achieved to accomplish the gate oxide formation.

Abstract translation: 公开了一种在沟槽角改善栅极氧化物薄化问题的方法。 该方法包括以下步骤。 首先，提供其中具有沟槽的硅衬底。 HDPCVD技术在沟槽的侧壁和底部上形成第一氧化物层。 在进行回蚀以在沟槽的底部离开第一氧化物层之后，通过LPCVD技术在第一氧化物层和沟槽的侧壁上形成第二氧化物层。 此后，进行各向同性蚀刻以去除第二氧化物层的大致部分，并且在沟槽角上留下第二氧化物层的残余部分。 因此，沟渠的角落是光滑的。 最后，实现在沟槽的侧壁上形成第三氧化物层的热氧化以实现栅极氧化物的形成。

公开(公告)号：US06355974B1

公开(公告)日：2002-03-12

申请号：US09588110

申请日：2000-05-31

Applicant: Ping-Wei Lin ,  Ming-Kuan Kao ,  Jui-Ping Li

Inventor： Ping-Wei Lin ,  Ming-Kuan Kao ,  Jui-Ping Li

IPC: H01L2904

CPC classification number: H01L21/28194 ,  H01L21/28211 ,  H01L21/76224 ,  H01L21/823481 ,  H01L29/4236 ,  H01L29/511 ,  H01L29/78

Abstract: A method to prevent the formation of a thinner portion of insulating layer, especially a gate oxide layer, at the junction between the side walls and the bottom insulator is disclosed. First, a pad oxide layer is formed on the side walls and the bottom of the trench. Next, a bottom oxide is formed on the lower portion of the trench. Then, the upper portion of the bottom oxide and the exposed pad oxide layer are removed by wet etching to leave a bottom oxide having a concave surface. Next, the conformal gate oxide layer is grown on the exposed side walls of the trench.

Abstract translation: 公开了一种防止在侧壁和底部绝缘体之间的接合处形成绝缘层的较薄部分，特别是栅极氧化物层的方法。 首先，在沟槽的侧壁和底部形成衬垫氧化物层。 接下来，在沟槽的下部形成底部氧化物。 然后，通过湿蚀刻去除底部氧化物的上部和暴露的焊盘氧化物层，以留下具有凹面的底部氧化物。 接下来，在沟槽的暴露的侧壁上生长保形栅极氧化物层。

公开(公告)号：US07651909B2

公开(公告)日：2010-01-26

申请号：US11377160

申请日：2006-03-15

Applicant: Ping-Wei Lin ,  Chin-Chia Wu ,  Chao-Sheng Chiang

Inventor： Ping-Wei Lin ,  Chin-Chia Wu ,  Chao-Sheng Chiang

IPC: H01L21/8242

CPC classification number: H01L28/40

Abstract: A method for fabricating a metal-insulator-metal capacitor is described. A first metal layer is formed on a substrate. A plasma treatment is performed on the surface of the first metal layer. Then, a first oxide layer, a nitride layer and a second oxide layer are formed in sequence over the first metal layer. Thereafter, a second metal layer is formed on the second oxide layer. The second metal layer, the second oxide layer, the nitride layer, the first oxide layer and the first metal layer are defined to form the metal-insulator-metal capacitor.

Abstract translation: 描述了用于制造金属 - 绝缘体 - 金属电容器的方法。 在基板上形成第一金属层。 在第一金属层的表面进行等离子体处理。 然后，依次在第一金属层上形成第一氧化物层，氮化物层和第二氧化物层。 此后，在第二氧化物层上形成第二金属层。 第二金属层，第二氧化物层，氮化物层，第一氧化物层和第一金属层被定义为形成金属 - 绝缘体 - 金属电容器。

公开(公告)号：US06261966B1

公开(公告)日：2001-07-17

申请号：US09373191

申请日：1999-08-12

Applicant: Jui-ping Li ,  Ping-wei Lin ,  Ming-kuan Kao ,  Hui-ching Lin

Inventor： Jui-ping Li ,  Ping-wei Lin ,  Ming-kuan Kao ,  Hui-ching Lin

IPC: H01L213065

CPC classification number: H01L21/763 ,  H01L21/7621

Abstract: A method for improving trench isolation is disclosed. A trench is etched into the substrate by using a photo mask. A bottom oxide layer, a sidewall oxide layer and a polycrystalline silicon layer are deposited into the trench and over the wafer, and are etched to clear from the surface, then over-etched till a recess is formed within the trench. Thereafter, an oxide etch step is applied to remove a certain thickness of the sidewall oxide layer in order to expose the polycrystalline silicon edge in the opening of the trench. Then, an oxidation step is utilized to form a capping oxide layer on top of the recess by oxidizing the top and the exposed edge of the polycrystalline silicon film in the trench so that a uniform plug edge can be achieved inside the trench to prevent stress problem induced by a wedge shaped oxide growing in the space between the plug and the substrate.

Abstract translation: 公开了一种改善沟槽隔离的方法。 通过使用光掩模将沟槽蚀刻到衬底中。 将底部氧化物层，侧壁氧化物层和多晶硅层沉积到沟槽中并在晶片上方，并且被蚀刻以从表面上透明，然后被过蚀刻直到沟槽内形成凹陷。 此后，施加氧化物蚀刻步骤以除去一定厚度的侧壁氧化物层，以暴露沟槽开口中的多晶硅边缘。 然后，利用氧化步骤，通过在沟槽中氧化多晶硅膜的顶部和暴露的边缘，在凹槽的顶部上形成封盖氧化物层，从而可以在沟槽内部实现均匀的插塞边缘以防止应力问题 由在塞子和基底之间的空间中生长的楔形氧化物引起。

公开(公告)号：US6071794A

公开(公告)日：2000-06-06

申请号：US323746

申请日：1999-06-01

Applicant: Ping-Wei Lin ,  Ming-Kuan Kao ,  Jui-Ping Li

Inventor： Ping-Wei Lin ,  Ming-Kuan Kao ,  Jui-Ping Li

IPC: H01L21/28 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/51 ,  H01L21/76

CPC classification number: H01L21/28194 ,  H01L21/76224 ,  H01L21/823481 ,  H01L29/511 ,  H01L29/78 ,  H01L21/28211 ,  H01L29/4236

Abstract: A method to prevent the formation of a thinner portion of insulating layer, especially a gate oxide layer, at the junction between the side walls and the bottom insulator is disclosed. First, a pad oxide layer is formed on the side walls and the bottom of the trench. Next, a bottom oxide is formed on the lower portion of the trench. Then, the upper portion of the bottom oxide and the exposed pad oxide layer are removed by wet etching to leave a bottom oxide having a concave surface. Next, the conformal gate oxide layer is grown on the exposed side walls of the trench.