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11.发明授权Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 有权用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件公开(公告)号：US07357961B2
公开(公告)日：2008-04-15
申请号：US10819544
申请日：2004-04-07
申请人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
CPC分类号： H01L21/3122 , C08G77/04 , C08G77/08 , C08G77/50 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953 , Y10T428/31663
摘要： Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2): (R1)aSi(R2)4-a (1) (R3)b(R5)3-bSi—R7—Si(R6)3-c(R4)c (2) wherein R1, R3 and R4 each independently represents a monovalent hydrocarbon group which may have a substituent; R2, R5 and R6 each independently represents a hydrolyzable group; R7 represents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.
摘要翻译： 本发明提供一种成膜组合物，其可以制造具有高强度和低介电常数的膜，其制造方法，多孔膜形成方法，多孔膜和在内部含有多孔膜的半导体器件。 更具体地提供了一种成膜组合物，其包含通过在阴离子离子交换树脂的存在下水解和缩合一种或多种可水解硅烷化合物而获得的聚合物，其中可水解硅烷化合物选自由式（1） ）和（2）：<？in-line-formula description =“In-line Formulas”end =“lead”？（R＆lt; 1＆gt;）＆lt; 4-a（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula- 公式描述=“在线公式”end =“lead”？>（R 3）3（R 5）3 -b-Si-R 7 -Si（R 6）3-c（R 4） ）（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R 1，R 3 R 4和R 4各自独立地表示可以具有取代基的一价烃基; R 2，R 5和R 6各自独立地表示可水解基团; R 7表示二价有机基团; a表示0〜3的整数， b和c各自表示1或2的整数。
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12.发明授权Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device 有权用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件公开(公告)号：US07332446B2
公开(公告)日：2008-02-19
申请号：US10808692
申请日：2004-03-25
申请人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/469
CPC分类号： H01L21/02126 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. Specifically, the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula (X2O) i(SiO2)j(H2O)k and one more organosilate compounds represented by the formula (X2O)a(RSiO1.5)b(H2O)c. Thus, the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured.
摘要翻译： 根据本发明，可以使用普通的半导体工艺容易地形成具有控制厚度的薄膜。 提供一种用于形成具有优异的介电性能和机械性能的多孔膜的涂布液。 具体地，用于形成多孔膜的涂布液包括通过一种或多种由式（X 2 O 2）O表示的硅酸盐化合物（SiO 2）的缩合获得的缩合产物， （H 2）2）另外，另外还有一种由式（ⅩⅪ）表示的有机硅酸盐化合物 （H 2 O）C（H 2 O）C（H 2 O） 。 因此，可以制造用于半导体制造工艺中具有足够的机械强度和介电性能的多孔绝缘膜。
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13.发明申请公开(公告)号：US20070238300A1
公开(公告)日：2007-10-11
申请号：US11783542
申请日：2007-04-10
申请人： Tsutomu Ogihara , Takafumi Ueda , Motoaki Iwabuchi
发明人： Tsutomu Ogihara , Takafumi Ueda , Motoaki Iwabuchi
IPC分类号： H01L21/311
CPC分类号： C08G77/08 , C08L83/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122
摘要： A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.
摘要翻译： 由含有（A）通过在酸催化剂的存在下进行水解性缩合而得到的含硅化合物，并从反应混合物中基本除去酸催化剂的热固性组合物形成含硅膜， （B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或锍，碘鎓盐或铵化合物，（C）有机酸和（D）有机溶剂。 含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。 该组合物有效地使光刻后的图案缺陷的发生最小化并且是稳定的。
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14.发明授权Antireflective film material, and antireflective film and pattern formation method using the same 有权防反射膜材料，以及使用其的抗反射膜和图案形成方法公开(公告)号：US07202013B2
公开(公告)日：2007-04-10
申请号：US10858997
申请日：2004-06-02
IPC分类号： G03C1/73
CPC分类号： G03F7/091 , C09D183/04 , G03F7/0045 , G03F7/0757 , Y10T428/31663
摘要： It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing.The present invention provides an antireflective film material comprising a polymer (A) comprising copolymerized repeating units expressed by the Formula (1) and/or the Formula (2), an organic solvent (B), an acid generator (C) and an optional crosslinking agent (D)
摘要翻译： 本发明的目的是提供一种抗蚀剂材料，该防反射膜相对于抗蚀剂具有高蚀刻选择性，即具有比抗蚀剂更快的蚀刻速度，用于形成抗反射膜层的图案形成方法 在使用该防反射膜材料的基板上，使用该抗反射膜作为基板处理的硬掩模的图案形成方法。
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15.发明授权Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 失效用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件公开(公告)号：US07126208B2
公开(公告)日：2006-10-24
申请号：US10706863
申请日：2003-11-12
CPC分类号： C08G77/16 , C08G77/04 , C08G77/08 , C08K5/235 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , C08L83/04
摘要： Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being: (R1)aSi(R2)4-a (1) (R3)bSi(R4)4-b (2) Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.
摘要翻译： 提供一种用于形成多孔膜的组合物，其可以以简单且低成本的方法形成具有实际机械强度的多孔膜; 多孔膜和形成膜的方法; 以及包含多孔膜的便宜，高性能和高可靠性的半导体器件。 更具体地说，提供了一种用于形成多孔膜的组合物，其包含通过水解和缩合一种或多种由式（1）表示的硅烷化合物，或优选通过水解和共缩合一种或多种由式 （1）和另外一个由式（2），式（1）和（2）表示的硅烷化合物是：<？in-line-formula description =“In-line formula”end =“lead” （1）＆lt;＆lt; 1＆gt;＆lt; 1＆gt;＆lt; 1＆gt; “In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>（R <3> ） （2）<βin-line-formula description =“In-line Formulas”end =“tail”？ >还提供了一种形成多孔膜的方法，包括将所述组合物施加在基底上以形成膜的步骤和将膜转化为多孔膜的步骤。
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公开(公告)号：US08927192B2
公开(公告)日：2015-01-06
申请号：US13605360
申请日：2012-09-06
申请人： Tsutomu Ogihara , Motoaki Iwabuchi
发明人： Tsutomu Ogihara , Motoaki Iwabuchi
CPC分类号： G03F7/16 , B01D36/001 , G03F7/004
摘要： A production method of a resist composition for lithography, including, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, the resist composition for lithography is passed through the filter after an interior of a vessel having the filter installed therein is kept under reduced pressure. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
摘要翻译： 用于光刻的抗蚀剂组合物的制造方法至少包括：用于通过其中的过滤器对用于光刻的光刻胶组合物进行过滤的过滤步骤，其中在所述过滤步骤中，用于光刻的抗蚀剂组合物在经过过滤器的内部 将安装有过滤器的容器保持在减压下。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。
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公开(公告)号：US20130108958A1
公开(公告)日：2013-05-02
申请号：US13605360
申请日：2012-09-06
申请人： Tsutomu OGIHARA , Motoaki IWABUCHI
发明人： Tsutomu OGIHARA , Motoaki IWABUCHI
IPC分类号： G03F7/004
CPC分类号： G03F7/16 , B01D36/001 , G03F7/004
摘要： A production method of a resist composition for lithography, including, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, the resist composition for lithography is passed through the filter after an interior of a vessel having the filter installed therein is kept under reduced pressure. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
摘要翻译： 用于光刻的抗蚀剂组合物的制造方法至少包括：用于通过其中的过滤器对用于光刻的光刻胶组合物进行过滤的过滤步骤，其中在所述过滤步骤中，用于光刻的抗蚀剂组合物在经过过滤器的内部 将安装有过滤器的容器保持在减压下。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。
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18.发明授权公开(公告)号：US07855043B2
公开(公告)日：2010-12-21
申请号：US11808100
申请日：2007-06-06
摘要： A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst and removing the acid catalyst, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of a basic catalyst and removing the basic catalyst, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively.
摘要翻译： 由含有（A-1）在酸催化剂存在下进行可水解硅化合物的水解缩合得到的含硅化合物和除去酸催化剂（A-2）的热固性组合物形成含硅膜 ）通过在碱性催化剂的存在下进行可水解硅化合物的水解缩合而除去碱性催化剂得到的含硅化合物，（B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或 锍，碘或铵化合物，（C）有机酸和（D）有机溶剂。 含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。
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19.发明申请COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE 审中-公开用于形成多孔膜的组合物，多孔膜及其形成方法，间隔绝缘膜和半导体器件公开(公告)号：US20070087124A1
公开(公告)日：2007-04-19
申请号：US11537697
申请日：2006-10-02
CPC分类号： C08G77/16 , C08G77/04 , C08G77/08 , C08K5/235 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , C08L83/04
摘要： Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being: (R1)aSi(R2)4-a (1) (R3)bSi(R4)4-b (2)Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.
摘要翻译： 提供一种用于形成多孔膜的组合物，其可以以简单且低成本的方法形成具有实际机械强度的多孔膜; 多孔膜和形成膜的方法; 以及包含多孔膜的便宜，高性能和高可靠性的半导体器件。 更具体地说，提供了一种用于形成多孔膜的组合物，其包含通过水解和缩合一种或多种由式（1）表示的硅烷化合物，或优选通过水解和共缩合一种或多种由式 （1）和另外一个由式（2），式（1）和（2）表示的硅烷化合物是：<？in-line-formula description =“In-line formula”end =“lead” （1）＆lt;＆lt; 1＆gt;＆lt; 1＆gt;＆lt; 1＆gt; “In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>（R <3> ） （2）<βin-line-formula description =“In-line Formulas”end =“tail”？ >还提供了一种形成多孔膜的方法，包括将所述组合物施加在基底上以形成膜的步骤和将膜转化为多孔膜的步骤。
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20.发明授权Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern 有权防反射膜材料和具有抗反射膜的基板和形成图案的方法公开(公告)号：US07163778B2
公开(公告)日：2007-01-16
申请号：US10797201
申请日：2004-03-11
CPC分类号： G03F7/091 , G03F7/0752 , G03F7/0757 , Y10T428/24355
摘要： There is disclosed an anti-reflection film material used in lithography containing at least a polymer compound having repeating units for copolymerization represented by the following general formula (1), or those containing a polymer compound having repeating units for copolymerization represented by the following general formula (2) and a polymer compound having repeating units for copolymerization represented by the following general formula (3). There can be provided an anti-reflection film material which has an excellent reflection preventive effect to exposure at short wavelength, and has high etch selectivity, namely, an etch rate is higher enough than the photoresist film, an etch rate is sufficiently slower than a substrate to be processed, wherein the shape of the resist pattern formed in the photoresist film on the anti-reflection film can be made perpendicular
摘要翻译： 公开了一种用于光刻的抗反射膜材料，其至少包含具有由以下通式（1）表示的用于共聚的重复单元的聚合物化合物，或含有由以下通式表示的共聚重复单元的聚合物化合物 （2）和具有下述通式（3）表示的共聚重复单元的高分子化合物。 可以提供防反射膜材料，其对短波长的曝光具有优异的反射防止效果，并且具有高蚀刻选择性，即蚀刻速率比光致抗蚀剂膜更高，蚀刻速率足够慢于 基板，其中形成在防反射膜上的光致抗蚀剂膜中的抗蚀剂图案的形状可以垂直
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