Abstract:
Utilizing rugged pattern of atomic size present on a crystalline substrate of a semiconductor such as silicon or selenium or the like, a microstructure body is produced on the substrate by forming a layer of a first element of one monolayer or less by arranging at the position of the substrate most stable in energy formed by ruggedness the atoms of the first element such as gold, silver, copper, nickel, palladium, platinum or an element of group IV and then depositing successively atoms of at least one second element of group III, group IV and group V on only at a part of the surface of the substrate on which said layer of one monolayer or less by vapor deposition, sputtering or the like.
Abstract:
A fine-fabrication method of solid surfaces relates to a new surface fabrication method allows a solid-device surface to be fabricated at an atomic scale so as to produce an ultra-fine device or a device for recording information at an ultra-high density. A probe is installed with a tip thereof facing to the surface of a specimen to undergo fabrication. A voltage for forming an electric field is applied between the probe and the specimen. The electric field is large enough to field-evaporate atoms constituting the specimen or the probe; the electric field field-evaporates atoms constituting the specimen, removing them from the surface of the specimen; and as another alternative, the electric field field-evaporates atoms constituting the probe, depositing them on the surface of the specimen. Further, in another surface atom fabrication method, while the surface of a specimen is observed at an atomic scale using a surface observation technique by means of a scanning tunnelling microscope, a pulsative voltage large enough for the field evaporation of atoms described above is applied between the probe and the specimen at any arbitrary desired positions on the surface of the specimen; and the pulsative voltage field-evaporates and, hence, eliminates atoms one by one from the surface of the specimen.
Abstract:
A fine-fabrication method of solid surfaces relates to a new surface fabrication method allows a solid-device surface to be fabricated at an atomic scale so as to produce an ultra-fine device or a device for recording information at an ultra-high density. A probe is installed with a tip thereof facing to the surface of a specimen to undergo fabrication. A voltage for forming an electric field is applied between the probe and the specimen. The electric field is large enough to field-evaporate atoms constituting the specimen or the probe; the electric field field-evaporates atoms constituting the specimen, removing them from the surface of the specimen; and as another alternative, the electric field field-evaporates atoms constituting the probe, depositing them on the surface of the specimen. Further, in another surface atom fabrication method, while the surface of a specimen is observed at an atomic scale using a surface observation technique by means of a scanning tunnelling microscope, a pulsative voltage large enough for the field evaporation of atoms described above is applied between the probe and the specimen at any arbitrary desired positions on the surface of the specimen; and the pulsative voltage field-evaporates and, hence, eliminates atoms one by one from the surface of the specimen.
Abstract:
An electron microscope and a method for obtaining microscopic images whereby the intensity and distribution of the internal magnetic field of a specimen are acquired with precision. The electron microscope irradiates a focused electron beam at a target specimen and detects the transmitted beam past the specimen. The irradiated position on the specimen is selected by one of three ways: by moving the specimen alone, by deflecting the focused electron beam before it enters the specimen, or by combining these two ways. In this setup, the internal magnetic field of the specimen under its irradiated spot is known through detection of the deflection of the electron beam caused by the Lorentz force and through arithmetic processing of the detected deflection. An actuator that moves the specimen comprises a support with a hole through which the electron beam passes, a specimen stage with a like hole, a plurality of piezoelectric devices, and a structure that lets the electron beam pass therethrough. The actuator also comprises a mobile stage mounted on the support and attached to the specimen stage via the multiple piezoelectric devices, the mobile stage causing the devices to shift the support normal to the electron beam. Another component of the actuator is a stage control means for supplying a driving voltage to the multiple piezoelectric devices for their position control.
Abstract:
It is an object of this invention to attain reliable starting characteristics and stable rotation performance of a motor in a motor of a phase synchronization driving type. To achieve this object, according to this invention, there is provided a motor driving apparatus having a stepping motor constituted by a stator with at least two poles, a rotor having a permanent magnet with at least two poles, and a driving coil magnetically coupled to the stator, a driving pulse generation means for outputting a driving pulse signal for driving the stepping motor, a driving circuit for supplying a driving current to the driving coil on the basis of the signal from the driving pulse generation means, a voltage detection circuit for detecting a counter electromotive voltage generated upon rotation of the rotor, and a pole position detection means for detecting the pole position of the rotating rotor with respect to the rotor on the basis of a detection signal generated by the voltage detection circuit, the driving pulse generation means controlling the output timing of the driving pulse signal on the basis of the detection signal from the pole position detection means, characterized in that the pole position detection means stops outputting the driving pulse signal on the basis of the detection signal from the voltage detection circuit which is detected during the output period of the driving pulse signal, and outputs a driving pulse signal having a phase opposite to that of the driving pulse signal.
Abstract:
An apparatus for measuring an electromagnetic field distribution using a focused electron beam can measure the electromagnetic field distribution in a specimen with high resolution and high reliability. A focused electron beam radiation system irradiates a specimen with a focused electron beam. A specimen tilt mechanism tilts a specimen by 180.degree. about a tilt axis that is perpendicular to the optical axis of the focused electron beam. An electron beam position detector measures the direction and quantity of the deflection given to the focused electron beam when it is transmitted through the specimen. Further, a processing system calculates the direction and the intensity of an electric field, and the direction and the intensity of a magnetic field separately at a point on the specimen through which the focused electron beam is transmitted, from the data on the direction and the quantity of the deflection of the focused electron beam measured by the electron beam position detector before and after the turnover of the specimen by the specimen tilt mechanism. Thus, an electric field and a magnetic field in a specimen can be separately observed independently of each other.