公开(公告)号：US20100070644A1

公开(公告)日：2010-03-18

申请号：US12517402

申请日：2007-12-03

申请人： Seong-Yong Lim ,  Ji-Hoon Choi ,  Hyun-Cheol Kim ,  Joo-Myoung Seok ,  Han-Kyu Lee ,  Jin-Woo Hong

发明人： Seong-Yong Lim ,  Ji-Hoon Choi ,  Hyun-Cheol Kim ,  Joo-Myoung Seok ,  Han-Kyu Lee ,  Jin-Woo Hong

IPC分类号： G06F15/16

CPC分类号： H04N5/765 ,  H04N5/782 ,  H04N5/85 ,  H04N5/907 ,  H04N9/8205

摘要： Provided are a time shift service apparatus and method based on multimedia information, and a multimedia reproducing apparatus using the same. The timeshift service apparatus includes: a timeshift buffering unit for storing a multimedia stream according a timeshift service requested from an outside device; a time obtaining unit for obtaining time information about times of starting and ending a timeshift service according to the timeshift service request; a memory managing unit for storing a multimedia stream, which is serviced based on the obtained time information by the time obtaining unit, in the timeshift buffering unit; and an information generating unit for generating detailed information for the multimedia stream stored in the timeshift buffering unit.

摘要翻译： 提供了一种基于多媒体信息的时移服务装置和方法，以及使用该时移服务装置和方法。 时移服务装置包括：时移缓存单元，用于根据从外部设备请求的时移服务来存储多媒体流; 时间获取单元，用于根据时移服务请求获取关于开始和结束时移服务的时间的时间信息; 存储器管理单元，用于存储在所述时移缓冲单元中基于所获得的时间信息而被服务的多媒体流; 以及信息生成单元，用于生成存储在时移缓存单元中的多媒体流的详细信息。

公开(公告)号：US20080207250A1

公开(公告)日：2008-08-28

申请号：US12072078

申请日：2008-02-22

申请人： Goo-Hyun Park ,  Sung-Kwon Jo ,  Ji-Hoon Choi

发明人： Goo-Hyun Park ,  Sung-Kwon Jo ,  Ji-Hoon Choi

IPC分类号： H04B7/005 ,  H04B7/26

CPC分类号： H04W52/221 ,  H04W52/146 ,  H04W52/241 ,  H04W52/245

摘要： An uplink power control method of a base station (BS) in a m obile communication system is provided. The method includes rece iving a signal from a terminal; calculating an RSQI value using t he signal and previous power control information; comparing the R SQI with a threshold; determining power control information after the comparison; sending the power control information to the ter minal.

摘要翻译： 提供了一种在通信系统中的基站（BS）的上行链路功率控制方法。 该方法包括从终端接收信号; 使用信号和先前的功率控制信息计算RSQI值; 将R SQI与阈值进行比较; 确定比较后的功率控制信息; 将功率控制信息发送到终端。

公开(公告)号：US20080175736A1

公开(公告)日：2008-07-24

申请号：US11898049

申请日：2007-09-07

申请人： Ji Hoon Choi ,  Jeong Il Park ,  Jeong Hoon Kang ,  Phil Soo Chang ,  Kyung Rae Cho ,  Jin Kyu Choi ,  Hyeong Joon Seo ,  In Ju Lee

发明人： Ji Hoon Choi ,  Jeong Il Park ,  Jeong Hoon Kang ,  Phil Soo Chang ,  Kyung Rae Cho ,  Jin Kyu Choi ,  Hyeong Joon Seo ,  In Ju Lee

IPC分类号： F04C18/356

CPC分类号： F01C21/0854 ,  F04C18/3562 ,  F04C23/001 ,  F04C23/008 ,  F04C2270/13

摘要： A variable capacity rotary compressor capable of reducing collision noise of a vane with a roller. The variable capacity rotary compressor includes a vane controller controlling the operation of a vane in order to vary compression capacity. The vane controller includes a control valve that switches a fluid channel so as to selectively apply discharge pressure and intake pressure to the vane guide slot, a connection channel that connects the control valve with the vane guide slot, a high-pressure channel that connects the control valve with a discharge side of the compressor, and a low-pressure channel that connects the control valve with an intake side of the compressor, and a throttle section that reduces the fluid channel of at least one of the high-pressure channel and the connection channel in order to reduce an initial discharge pressure applied to the vane guide slot.

摘要翻译： 一种可变容量的旋转式压缩机，能够降低叶片与滚子的碰撞噪音。 可变容量旋转压缩机包括控制叶片的操作以便改变压缩容量的叶片控制器。 叶片控制器包括：控制阀，其切换流体通道，以选择性地对叶片引导槽施加排出压力和进气压力;将控制阀与叶片引导槽连接的连接通道，连接 具有压缩机的排出侧的控制阀以及将控制阀与压缩机的进气侧连接的低压通路，以及节流部，其将至少一个高压通路和 连接通道，以便减小施加到叶片引导槽的初始排出压力。

公开(公告)号：US07364363B2

公开(公告)日：2008-04-29

申请号：US11128341

申请日：2005-05-13

申请人： Sang Wook Kim ,  Phil Soo Chang ,  Ji Hoon Choi

发明人： Sang Wook Kim ,  Phil Soo Chang ,  Ji Hoon Choi

IPC分类号： F16C27/02

CPC分类号： F16C17/042 ,  F16C2360/44

摘要： A thrust bearing designed to support a rotational shaft within a turbo compressor, and including foils subjected to a friction with gas. The bearing includes a plurality of elastic foils having different stiffnesses from each other.

摘要翻译： 推力轴承设计用于支撑涡轮压缩机内的旋转轴，并且包括经受与气体摩擦的箔。 轴承包括彼此具有不同刚度的多个弹性箔片。

公开(公告)号：US09871055B1

公开(公告)日：2018-01-16

申请号：US15462933

申请日：2017-03-20

申请人： Phil-ouk Nam ,  Sung-gil Kim ,  Ji-hoon Choi ,  Seul-ye Kim ,  Jae-young Ahn ,  Hong-suk Kim

发明人： Phil-ouk Nam ,  Sung-gil Kim ,  Ji-hoon Choi ,  Seul-ye Kim ,  Jae-young Ahn ,  Hong-suk Kim

IPC分类号： H01L27/115 ,  H01L27/11582 ,  H01L27/11556 ,  H01L29/78 ,  H01L27/1157

CPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/7827

摘要： A vertical-type memory device may include a channel layer vertically extending on a substrate, a ground selection transistor at a side of the channel layer on the substrate, the ground selection transistor including a first gate insulation portion and a first replacement gate electrode, an etch control layer on the first replacement gate electrode, and a memory cell on the etch control layer, the memory cell including a second gate insulation portion and a second replacement gate electrode. The etch control layer may include a polysilicon layer doped with carbon, N-type impurities, or P-type impurities, or may include a polysilicon oxide layer comprising carbon, N-type impurities, or P-type impurities. A thickness of the first replacement gate electrode may be the same as a thickness of the second replacement gate electrode, or the first replacement gate electrode may be thicker than the second.

公开(公告)号：US09775192B2

公开(公告)日：2017-09-26

申请号：US13221496

申请日：2011-08-30

申请人： Cheol-hoi Kim ,  Hun Lee ,  Ji-hoon Choi ,  Joo-yoon Bae

发明人： Cheol-hoi Kim ,  Hun Lee ,  Ji-hoon Choi ,  Joo-yoon Bae

IPC分类号： H04W88/04 ,  H04W84/14 ,  H04W88/06

CPC分类号： H04W88/04 ,  H04W4/00 ,  H04W84/14 ,  H04W88/06

摘要： A method of sharing a wireless data service, including receiving, by a first terminal, a wireless data service share request from a second terminal, checking, by the first terminal, available wireless data service remaining amount information, and transmitting, by the first terminal, a response to the wireless data service share request to the second terminal based on the checked wireless data service remaining amount information. Another such sharing method includes requesting, by a second terminal, wireless data service remaining amount information available by a first terminal from the first terminal, transmitting, by the second terminal, a wireless data service share request to the first terminal based on the wireless data service remaining amount information received from the first terminal, and receiving, by the second terminal, a response to the wireless data service share request from the first terminal.

公开(公告)号：US09490371B2

公开(公告)日：2016-11-08

申请号：US14539043

申请日：2014-11-12

申请人： Young-Jin Noh ,  Bio Kim ,  Kwangmin Park ,  Jaeyoung Ahn ,  SeungHyun Lim ,  JaeHo Choi ,  Jumi Yun ,  Ji-Hoon Choi

发明人： Young-Jin Noh ,  Bio Kim ,  Kwangmin Park ,  Jaeyoung Ahn ,  SeungHyun Lim ,  JaeHo Choi ,  Jumi Yun ,  Ji-Hoon Choi

IPC分类号： H01L29/792 ,  H01L29/66 ,  H01L27/115

CPC分类号： H01L29/7926 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/792

摘要： A nonvolatile memory device includes a gate structure including inter-gate insulating patterns that are vertically stacked on a substrate and gate electrodes interposed between the inter-gate insulating patterns, a vertical active pillar connected to the substrate through the gate structure, a charge-storing layer between the vertical active pillar and the gate electrode, a tunnel insulating layer between the charge-storing layer and the vertical active pillar, and a blocking insulating layer between the charge-storing layer and the gate electrode. The charge-storing layer include first and second charge-storing layers that are adjacent to the blocking insulating layer and the tunnel insulating layer, respectively. The first charge-storing layer includes a silicon nitride layer, and the second charge-storing layer includes a silicon oxynitride layer.

摘要翻译： 非易失性存储器件包括栅极结构，栅极结构包括垂直堆叠在衬底上的栅极间绝缘图案和介于栅间绝缘图案之间的栅极电极，通过栅极结构连接到衬底的垂直有源柱，电荷存储 垂直有源柱和栅电极之间的层，电荷存储层和垂直有源柱之间的隧道绝缘层，以及电荷存储层和栅电极之间的阻挡绝缘层。 电荷存储层包括分别与隔离绝缘层和隧道绝缘层相邻的第一和第二电荷存储层。 第一电荷存储层包括氮化硅层，第二电荷存储层包括氮氧化硅层。

公开(公告)号：US09428853B2

公开(公告)日：2016-08-30

申请号：US13483361

申请日：2012-05-30

申请人： Hyun Mook Kim ,  Doo Pil Kim ,  Je Hong Min ,  Kalo Jin Jun ,  Yong Jong Park ,  Jae Ryong Park ,  Dong Pil Seo ,  Sang Hyeok Lee ,  In Cheol Jang ,  Sang Yeon Pyo ,  Jung Hee Lee ,  Ji Hoon Choi ,  Seung Oh Kim

发明人： Hyun Mook Kim ,  Doo Pil Kim ,  Je Hong Min ,  Kalo Jin Jun ,  Yong Jong Park ,  Jae Ryong Park ,  Dong Pil Seo ,  Sang Hyeok Lee ,  In Cheol Jang ,  Sang Yeon Pyo ,  Jung Hee Lee ,  Ji Hoon Choi ,  Seung Oh Kim

IPC分类号： D06F23/04

CPC分类号： D06F23/04

摘要： A washing machine having an improved structure which increases washing capacity without increasing the size of the washing machine. The washing machine includes a cabinet including an outer part and a cylindrical inner part connected to the outer part, a spin basket rotatably disposed in the inner part and including a bottom and a side wall extending from the bottom, a pulsator rotatably disposed in the spin basket, a motor provided under the spin basket, a clutch to selectively transmit power of the motor to the spin basket or the pulsator, a base plate to fix the clutch and the motor, and suspension members connecting the base plate to the upper portion of the cabinet. Wash water is stored within the spin basket and is not stored outside the spin basket during a washing cycle.

摘要翻译： 一种具有改进的结构的洗衣机，其在不增加洗衣机的尺寸的情况下增加洗涤能力。 洗衣机包括一个外壳和一个与外部连接的圆柱形内部的机壳，一个可旋转地设置在内部的旋转筒，包括底部和从底部延伸的侧壁，一个可旋转地设置在旋转中的波轮 设置在旋转筐下的马达，用于选择性地将马达的动力传递到旋转筐或波轮的离合器，用于固定离合器和马达的基板，以及将基板连接到上部的悬挂构件 内阁。 洗涤水储存在旋转筒内，并且在洗涤循环期间不会储存在旋转筒外部。

公开(公告)号：US20150194440A1

公开(公告)日：2015-07-09

申请号：US14539043

申请日：2014-11-12

申请人： Young-Jin Noh ,  Bio Kim ,  Kwangmin Park ,  Jaeyoung Ahn ,  SeungHyun Lim ,  JaeHo Choi ,  Jumi Yun ,  Ji-Hoon Choi

发明人： Young-Jin Noh ,  Bio Kim ,  Kwangmin Park ,  Jaeyoung Ahn ,  SeungHyun Lim ,  JaeHo Choi ,  Jumi Yun ,  Ji-Hoon Choi

IPC分类号： H01L27/115 ,  H01L29/792

CPC分类号： H01L29/7926 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/792

摘要： A nonvolatile memory device includes a gate structure including inter-gate insulating patterns that are vertically stacked on a substrate and gate electrodes interposed between the inter-gate insulating patterns, a vertical active pillar connected to the substrate through the gate structure, a charge-storing layer between the vertical active pillar and the gate electrode, a tunnel insulating layer between the charge-storing layer and the vertical active pillar, and a blocking insulating layer between the charge-storing layer and the gate electrode. The charge-storing layer include first and second charge-storing layers that are adjacent to the blocking insulating layer and the tunnel insulating layer, respectively. The first charge-storing layer includes a silicon nitride layer, and the second charge-storing layer includes a silicon oxynitride layer.

摘要翻译： 非易失性存储器件包括栅极结构，栅极结构包括垂直堆叠在衬底上的栅极间绝缘图案和介于栅间绝缘图案之间的栅极电极，通过栅极结构连接到衬底的垂直有源柱，电荷存储 垂直有源柱和栅电极之间的层，电荷存储层和垂直有源柱之间的隧道绝缘层，以及电荷存储层和栅电极之间的阻挡绝缘层。 电荷存储层包括分别与隔离绝缘层和隧道绝缘层相邻的第一和第二电荷存储层。 第一电荷存储层包括氮化硅层，第二电荷存储层包括氮氧化硅层。

公开(公告)号：US08815676B2

公开(公告)日：2014-08-26

申请号：US13671948

申请日：2012-11-08

申请人： Sang-Ryol Yang ,  Yoo-Chul Kong ,  Jung-Ho Kim ,  Jin-Gyun Kim ,  Jae-Jin Shin ,  Ji-Hoon Choi

发明人： Sang-Ryol Yang ,  Yoo-Chul Kong ,  Jung-Ho Kim ,  Jin-Gyun Kim ,  Jae-Jin Shin ,  Ji-Hoon Choi

IPC分类号： H01L21/00

CPC分类号： H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

摘要： Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.

摘要翻译： 形成垂直非易失性存储器件的方法可以包括形成电绝缘层，其包括夹在第一和第二模具层之间的牺牲层的复合材料。 开口延伸穿过电绝缘层并暴露第一和第二模具层和牺牲层的内侧壁。 开口的侧壁可以衬有电绝缘保护层，并且可以在开口内的电绝缘保护层的内侧壁上形成第一半导体层。 然后可以从第一和第二模具层之间选择性地蚀刻牺牲层的至少一部分，从而在其中限定其中暴露电绝缘保护层的外侧壁的横向凹部。