Abstract:
A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal.
Abstract:
A sensor device is provided which included a digital arithmetic processing unit which performs arithmetic processing through a program stored therein in advance, a pulse generator for generating pulses through the program, and a unit for causing the output voltage of the sensor device to stay at either a power source voltage concerned or the ground voltage, when the pulses from the pulse generator are interrupted, thereby, a sensor device using digital arithmetic processing and outputting analogue voltages is provided allowing the host system to judge easily whether the sensor device is operating normally or is failing.
Abstract:
A semiconductor integrated circuit device having a plurality of logic circuits integrated on a semiconductor substrate is provided which can operate with a power source potential difference substantially less than 5 V. The logic circuit includes a bipolar transistor having a base and its collector-emitter current path coupled between a first power source terminal and an output terminal, together with at least one field effect transistor having its gate responsive to an input signal applied to an input terminal and its source-drain current path coupled between the first power source terminal and the base of the bipolar transistor. A semiconductor switch means is also provided which is responsive to the input signal applied to the input terminal for performing ON/OFF operations complementary to the ON/OFF operations of the bipolar transistor and which has a current path between its paired main terminals coupled between the output terminal and the second power source terminal. In order to improve the operating speed, a potential difference reducing element is provided having a current path between its paired main terminals coupled between the first power source terminal and the output terminal for reducing the potential difference, which is present between the first power source terminal and the output terminal based on the base-emitter forward voltage of the bipolar transistor when the bipolar transistor is ON.
Abstract:
A semiconductor integrated circuit device is equipped with a series of data handling stages, at least one of which includes a plurality of functional blocks arranged in parallel, a connecting means for connecting the functional blocks to functional blocks in a subsequent data handling stage, and a detection means for detecting data flow along a first connection in the connecting means. The detection means is included within a control means which controls data flow through at least one other connection in the connecting means based on the detection of data flow through the first connection in the connecting means. In a second embodiment, the semiconductor integrated circuit device includes a plurality of functional blocks arranged in a series for handling data along the series, a connecting means for handling data flow between at least two of the functional blocks, a data detecting means for detecting data flow along a selected connection in the connecting means, and for controlling data flow along another connection in the connecting means based on the detection of data flow through the selected connection.
Abstract:
A semiconductor integrated circuit device with a built-in memory circuit group is disclosed, wherein wiring is started from a data terminal position near a data exchange portion of a memory circuit group to reduce the length of a wiring. Accordingly, an operation speed can be improved by the reduction of wiring capacitance and a ratio of unwired wirings can be reduced by reduction of an occupying ratio of wiring channels.
Abstract:
A battery and a DC-to-DC converter are contained in a battery pack. When the battery pack is connected to a load by means of a connector and an output voltage reference value, corresponding to the power supply voltage of the load, the output voltage of the battery is converted according to the output voltage reference value by the DC-to-DC converter. The output voltage reference value is set by an output voltage reference value output means in the connector. Furthermore, the converted voltage is supplied to the load via an output voltage line.
Abstract:
A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal.
Abstract:
A battery and a DC-to-DC converter are contained in a battery pack. When the battery pack is connected to a load by means of a connector and an output voltage reference value, corresponding to the power supply voltage of the load, the output voltage of the battery is converted according to the output voltage reference value by the DC-to-DC converter. The output voltage reference value is set by an output voltage reference value output means in the connector. Furthermore, the converted voltage is supplied to the load via an output voltage line.
Abstract:
A semiconductor device capable of achieving downsizing without reducing the power supply efficiency and capable of reducing switching noises and a memory card using the same are disclosed. The device comprises a plurality of stages of voltage booster circuits for potentially raising a power supply voltage up to a final output voltage, a voltage control unit for controlling an output voltage at a nearby location of the final stage, and one or more internal elements to which the final output voltage is supplied. A primary voltage booster circuit at the first stage includes an inductance element, a switching element, a diode and a driver circuit. At a metal core part of the inductance element, a metal wiring line is used, which was formed by use of a fabrication process of semiconductor integrated circuits, while employing for its core part an inter-wiring layer dielectric film that was formed using the fabrication process. In addition, the switching element and the diode are arranged so that portions thereof are disposed beneath the inductance element.
Abstract:
In an interface device in which by means of a buried insulation film 412 and a region insulation portion 410 an SOI substrate 414 is divided into a semiconductor support substrate region 411, a controller side region 407 and a network side region 408 and a part of isolator circuits 405 and 406 making use of a static capacitance are formed in the network side region 408, the semiconductor support substrate region 411 and the network side region 408 are connected to a network power source to always keep these regions at a same potential, thereby, an interface device using a dielectric isolation substrate which suppresses erroneous operations due to noises and characteristic deterioration, and a system using the same are provided.