摘要:
There is provided an illumination system for wavelengths of ≦100 nm, having an object plane and a field plane. The illumination system includes a grating element having a plurality of gratings, and a diaphragm. The diaphragm is arranged after the grating element in a beam path from the object plane to the field plane.
摘要:
There is provided a system that includes a first optical sub-system contained in a first space, and a second optical sub-system contained in a second space. The first and said second spaces are separated by a structure selected from the group consisting of a diaphragm and a valve.
摘要:
There is provided a projection exposure system operable in a scanning mode along a scanning direction. The projection exposure system includes a collector that receives light having a wavelength ≦193 nm and illuminates a region in a plane. The plane is defined by a local coordinate system having a y-direction parallel to the scanning direction and an x-direction perpendicular to the scanning direction. The collector includes (a) a first mirror shell, (b) a second mirror shell within the first mirror shell, and (c) a fastening device for fastening the first and second mirror shells. The mirror shells are substantially rotational symmetric about a common rotational axis. The fastening device has a support spoke that extends in a radial direction of the mirror shells, and the support spoke, when projected into the plane, yields a projection that is non-parallel to the y-direction.
摘要:
An optical apparatus comprises an optical component having at least one optical surface and a first optical axis, a socket in which said optical component is mounted, first manipulators arranged to exert forces approximately parallel to the optical axis of the optical component for varying stresses in the optical component, the forces having a strength such that stress birefringence is induced in the component.
摘要:
The invention concerns a method for the indirect determination of local irradiance in an optical system; wherein the optical system comprises optical elements between which an illuminated beam path is formed and a measurement object which absorbs the radiation in the beam path at least partially is positioned in a partial region of the beam path selected for the locally-resolved determination of the irradiance and the temperature distribution of at least one part of the measurement object is determined by means of a temperature detector.
摘要:
In a facet mirror with a number of mirror facets, wherein the mirror facets are provided with reflecting surfaces, the mirror facets are mounted jointly in a basic body via bearing devices. The mirror facets comprise mirror bodies contacting at the periphery with the bearing devices via a surface, line or point contact. The preferred field of use of the facet mirrors is a projection objective of a projection exposure machine in microlithography for fabricating semiconductor elements.
摘要:
In a system for overcoming or at least damping oscillations in or through channels (9) which carry fluid in a component, in particular coolant in cooling channels in an optical element (1), in particular a projection objective lens (1a) for semiconductor lithography, oscillations which occur are detected and evaluated by sensors (5), after which the result is passed, in the form of an adaptronic control loop to piezoelectric elements (9), which are integrated in the optical element, and are in the form of thin plates, films or layers which, when activated, produce the oscillations or frequencies which counteract oscillations and natural frequencies produced by the turbulence.
摘要:
An optical system for semiconductor lithography including a plurality of optical components, as well as related components and methods, are disclosed. The apparatus can include an optical component that can be moved by a distance along a straight line within a time of between 5 ms and 500 ms. The straight line can have a polar and azimuth angle of between 0° and 90°, and a distance between the straight line and an optical axis of the apparatus being less than a cross-sectional dimension of a projection exposure beam bundle of the projection exposure apparatus. The apparatus can also include a guide unit configured to guide the optical component. The apparatus can further include a drive unit configured to drive the optical component via drive forces so that torques generated by inertial forces of the optical component and of optional components concomitantly moved with the optical component, and the torques generated by the drive forces, which act on the guide unit, compensate for one another to less than 10%.
摘要:
The invention concerns a method for the indirect determination of local irradiance in an optical system; wherein the optical system comprises optical elements between which an illuminated beam path is formed and a measurement object which absorbs the radiation in the beam path at least partially is positioned in a partial region of the beam path selected for the locally-resolved determination of the irradiance and the temperature distribution of at least one part of the measurement object is determined by means of a temperature detector.
摘要:
Semiconductor lithography system includes a plurality of optical components, including an optical component movable a distance along a straight line within a time of between 5 ms and 500 ms. The straight line can have a polar and azimuth angle of between 0° and 90°, and a distance between the straight line and an optical axis of the apparatus being less than a cross-sectional dimension of a projection exposure beam bundle of the projection exposure apparatus. The apparatus can also include a guide unit configured to guide the optical component. The apparatus can further include a drive unit configured to drive the optical component via drive forces so that torques generated by inertial forces of the optical component and of optional components concomitantly moved with the optical component, and the torques generated by the drive forces, which act on the guide unit, compensate for one another to less than 10%.