Power regulation circuit for high frequency electronic ballast for ceramic metal halide lamp
    12.
    发明授权
    Power regulation circuit for high frequency electronic ballast for ceramic metal halide lamp 失效
    陶瓷金属卤化物灯高频电子镇流器功率调节电路

    公开(公告)号:US06479949B1

    公开(公告)日:2002-11-12

    申请号:US09591280

    申请日:2000-06-09

    IPC分类号: H05B3702

    摘要: An electronic ballast for igniting and maintaining a discharge arc in a discharge tube of a ceramic metal halide lamp wherein a resistance of the discharge tube varies with a temperature of the discharge tube during operation. It is desirable to energize the discharge tube with a substantially constant value to prevent changes in color of the light emitted by the discharge tube that result from changes to the power applied to the discharge tube. The ballast includes ballast circuitry having an inverter circuit driving an LC tank network coupled to the discharge tube. The LC tank network applies a time varying voltage to the discharge tube wherein a peak-to-peak magnitude of the time varying voltage applied by the LC tank network is determined by a frequency of oscillation of the inverter circuit. The ballast circuitry further includes power regulation circuitry inductively coupled to the inverter circuit to vary the frequency of oscillation of the inverter circuit such that power applied to the discharge tube remains within a predetermined desired range while discharge tube resistance varies during operation. The power regulation circuitry includes an operational amplifier configured as a error amplifier. The operational amplifier compares a voltage drop across a sensor resistor in the inverter circuit with a set point reference voltage. The voltage drop across the sensor is proportional to a current through the discharge tube. When the voltage drop across the sensor resistor changes from the set point reference voltage because of changing resistance of the discharge tube, the output of the operational amplifier accordingly changes thereby changing a current though a secondary winding of a transformer. The transformer primary winding is coupled to the inverter circuit and changes a frequency of oscillation of the inverter circuit depending on the secondary winding current.

    摘要翻译: 一种用于在陶瓷金属卤化物灯的放电管中点燃和保持放电电弧的电子镇流器,其中放电管的电阻随着放电管在操作期间的温度而变化。 期望以大致恒定的值使放电管通电,以防止由施加到放电管的电力变化导致的放电管发射的光的颜色变化。 镇流器包括镇流器电路,其具有驱动耦合到放电管的LC箱网络的逆变器电路。 LC箱网络向放电管施加时变电压,其中由LC箱式网络施加的时变电压的峰 - 峰幅度由逆变器电路的振荡频率确定。 镇流器电路还包括电感耦合到逆变器电路的功率调节电路,以改变逆变器电路的振荡频率,使得施加到放电管的功率保持在预定的期望范围内,同时放电管电阻在操作期间变化。 功率调节电路包括被配置为误差放大器的运算放大器。 运算放大器将逆变器电路中的传感器电阻上的电压降与设定点参考电压进行比较。 传感器两端的电压降与通过放电管的电流成比例。 当传感器电阻器上的电压降由于放电管的电阻变化而从设定点参考电压变化时,运算放大器的输出相应地改变,从而改变通过变压器次级绕组的电流。 变压器初级绕组耦合到逆变器电路,并根据次级绕组电流改变逆变器电路的振荡频率。

    Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition
    13.
    发明授权
    Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition 失效
    用于在化学气相沉积期间将各种前体材料蒸发并流动到半导体晶片上

    公开(公告)号:US06299692B1

    公开(公告)日:2001-10-09

    申请号:US09621335

    申请日:2000-07-21

    IPC分类号: C23C1600

    CPC分类号: C23C16/4485

    摘要: A vaporizer head for evenly flowing at low pressure into a processing chamber vaporized precursor compounds for deposition of metal and other layers onto a semiconductor, has a bulb-like body with a center axis, a lengthwise cavity, an input end and an output end. The cavity has an opening for receiving a stream of vaporized precursor compound. There are a plurality of passages for flow of vapor through the head, each passage having a length and a diameter. They extend radially from along and around the cavity like the spokes of a wheel at inclined angles relative to the center axis from the cavity to a tapered output surface of the head. The cavity has a well-like bottom for capturing any droplets or particles of precursor compound and preventing them from leaving the head except as vapor. The plurality of passages have sufficiently large diameters such that there is only a low pressure drop in the vapor flowing through the head.

    摘要翻译: 将用于在低压下均匀流动到处理室中的蒸发器头部具有用于将金属和其它层沉积到半导体上的蒸发的前体化合物具有具有中心轴,纵向腔,输入端和输出端的灯泡状体。 空腔具有用于接收蒸发的前体化合物流的开口。 存在多个用于蒸汽流过头部的通道,每个通道具有长度和直径。 它们相对于从中心轴线到中心轴线的倾斜角度,沿着腔体的周边和周围径向延伸,如同轮的轮辐一样沿径向延伸到头部的锥形输出表面。 空腔具有良好的底部,用于捕获前体化合物的任何液滴或颗粒,并防止它们离开头部,除了作为蒸气。 多个通道具有足够大的直径,使得在流过头部的蒸气中只有低压降。

    Gas heater
    14.
    发明授权

    公开(公告)号:US09766022B2

    公开(公告)日:2017-09-19

    申请号:US13667314

    申请日:2012-11-02

    IPC分类号: H05B1/00 F28F7/02

    CPC分类号: F28F7/02

    摘要: A method and apparatus for heating or cooling a fluid is provided. In one embodiment, a heat exchanger is provided. The heat exchanger includes a first subassembly comprising an insert. The insert comprises a body having a blind passage formed axially in the body, a plurality of nozzles formed therein, and a first plurality of heat exchange elements disposed within the body. The heat exchanger also comprises a second subassembly comprising a sleeve and a second plurality of heat exchange elements disposed within the sleeve, wherein the insert is sealably engaged inside the sleeve and the insert and the sleeve cooperatively define a thin gap, and wherein each of the plurality of nozzles are disposed radially between the blind passage and the thin gap.

    GAS HEATER
    16.
    发明申请
    GAS HEATER 有权
    气体加热器

    公开(公告)号:US20130058637A1

    公开(公告)日:2013-03-07

    申请号:US13667314

    申请日:2012-11-02

    IPC分类号: F24H3/04 H05B1/02

    CPC分类号: F28F7/02

    摘要: A method and apparatus for heating or cooling a fluid is provided. In one embodiment, a heat exchanger is provided. The heat exchanger includes a first subassembly comprising an insert. The insert comprises a body having a blind passage formed axially in the body, a plurality of nozzles formed therein, and a first plurality of heat exchange elements disposed within the body. The heat exchanger also comprises a second subassembly comprising a sleeve and a second plurality of heat exchange elements disposed within the sleeve, wherein the insert is sealably engaged inside the sleeve and the insert and the sleeve cooperatively define a thin gap, and wherein each of the plurality of nozzles are disposed radially between the blind passage and the thin gap.

    摘要翻译: 提供了用于加热或冷却流体的方法和装置。 在一个实施例中,提供了热交换器。 热交换器包括包括插入件的第一子组件。 插入件包括具有在主体中轴向形成的盲通道的主体,形成在其中的多个喷嘴,以及设置在主体内的第一多个热交换元件。 热交换器还包括第二子组件,其包括套筒和设置在套筒内的第二多个热交换元件,其中插入件可密封地接合在套筒内,并且插入件和套筒协同地限定薄间隙,并且其中 多个喷嘴径向设置在盲通道和薄间隙之间。

    Process gas delivery for semiconductor process chamber
    17.
    发明授权
    Process gas delivery for semiconductor process chamber 有权
    半导体处理室的工艺气体输送

    公开(公告)号:US08187381B2

    公开(公告)日:2012-05-29

    申请号:US12197029

    申请日:2008-08-22

    IPC分类号: C30B35/00

    摘要: Methods and apparatus for a gas delivery assembly are provided herein. In some embodiments, the gas delivery assembly includes a gas inlet funnel having a first volume and one or more gas conduits; each gas conduit having an inlet and an outlet for facilitating the flow of a gas therethrough and into the first volume, wherein each gas conduit has a second volume less than the first volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet, wherein the second cross-section is non-circular. In some embodiments, each conduit has a longitudinal axis that intersects a central axis of the gas inlet funnel.

    摘要翻译: 本文提供了用于气体输送组件的方法和装置。 在一些实施例中,气体输送组件包括具有第一体积和一个或多个气体导管的气体入口漏斗; 每个气体管道具有入口和出口,用于促进气体流过其中并进入第一容积,其中每个气体管道具有小于第一容积的第二容积,并且其中每个气体导管的横截面从 靠近所述出口的靠近所述入口的第二横截面的第一横截面,其中所述第二横截面是非圆形的。 在一些实施例中,每个导管具有与进气漏斗的中心轴线相交的纵向轴线。

    Valve control system for atomic layer deposition chamber
    18.
    发明授权
    Valve control system for atomic layer deposition chamber 有权
    用于原子层沉积室的阀门控制系统

    公开(公告)号:US07201803B2

    公开(公告)日:2007-04-10

    申请号:US10731651

    申请日:2003-12-09

    IPC分类号: B05C11/00

    摘要: A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.

    摘要翻译: 用于半导体处理室的阀门控制系统包括系统控制计算机和与处理室相关联的多个电控阀。 该系统还包括与系统控制计算机通信并可操作地耦合到电控阀的可编程逻辑控制器。 控制阀的刷新时间可能小于10毫秒。 因此,阀门控制操作不会显着延长原子层沉积工艺中高度重复循环所需的时间。 可以通过可编程逻辑控制器的输出电源实现硬件互锁。