公开(公告)号：US07838135B2

公开(公告)日：2010-11-23

申请号：US11462400

申请日：2006-08-04

Applicant: Po-Cheng Kuo ,  Yen-Hsiang Fang ,  An-Cheng Sun ,  Tao-Hsuan Yang ,  Chun-Yuan Chou ,  Ching-Ray Chang

Inventor： Po-Cheng Kuo ,  Yen-Hsiang Fang ,  An-Cheng Sun ,  Tao-Hsuan Yang ,  Chun-Yuan Chou ,  Ching-Ray Chang

IPC: G11B5/66

CPC classification number: G11B5/7325 ,  C23C14/025 ,  C23C14/0652 ,  C23C14/165 ,  C23C14/185 ,  G11B5/653 ,  G11B5/851

Abstract: A novel heat assisted magnetic recording (HAMR) medium and the fabrication method therefor are provided. The exchange coupling effect occurring at the interface of FePt/CoTb double layers is adopted, and thus the resulting magnetic flux would be sufficient enough to be detected and readout under the room temperature. The provided HAMR medium exhibits a relatively high saturation magnetization and perpendicular coercivity, and thus possesses a great potential for the ultra-high density recording application.

Abstract translation: 提供了一种新型的热辅助磁记录（HAMR）介质及其制造方法。 采用在FePt / CoTb双层界面处发生的交换耦合效应，因此得到的磁通足够足以在室温下检测和读出。 所提供的HAMR介质具有相对高的饱和磁化强度和垂直矫顽力，因此对于超高密度记录应用具有很大的潜力。

公开(公告)号：US07993766B2

公开(公告)日：2011-08-09

申请号：US12054591

申请日：2008-03-25

Applicant: An-Cheng Sun ,  Po-Cheng Kuo ,  Jen-Hwa Hsu ,  Huei-Li Huang ,  Ching-Ray Chang

Inventor： An-Cheng Sun ,  Po-Cheng Kuo ,  Jen-Hwa Hsu ,  Huei-Li Huang ,  Ching-Ray Chang

IPC: G11B5/66

CPC classification number: G11B5/7325 ,  C23C14/0688 ,  C23C14/34 ,  C23C14/3492 ,  G11B5/65 ,  G11B5/851

Abstract: A magnetic recording medium is provided in the present invention. The magnetic recording medium including a substrate; a base layer disposed on the substrate; an intermediate layer disposed on the base layer; and a recording layer disposed on the intermediate layer and including a magnetic matrix and a plurality of non-magnetic particles percolated in the magnetic matrix.

Abstract translation: 在本发明中提供了一种磁记录介质。 所述磁记录介质包括基板; 设置在基板上的基层; 设置在所述基底层上的中间层; 以及设置在所述中间层上并包括在所述磁性矩阵中经过的磁矩阵和多个非磁性颗粒的记录层。

公开(公告)号：US20060021871A1

公开(公告)日：2006-02-02

申请号：US10901789

申请日：2004-07-29

Applicant: Po-Cheng Kuo ,  Huei-Li Huang ,  Jen-Hwa Hsu ,  Ching-Ray Chang ,  An-Cheng Sun ,  Sheng-Chi Chen ,  Chun-Yuan Chou ,  Chang-Tai Lee ,  Huang-Wei Chang

Inventor： Po-Cheng Kuo ,  Huei-Li Huang ,  Jen-Hwa Hsu ,  Ching-Ray Chang ,  An-Cheng Sun ,  Sheng-Chi Chen ,  Chun-Yuan Chou ,  Chang-Tai Lee ,  Huang-Wei Chang

IPC: C23C14/00 ,  C23C14/32

CPC classification number: C23C14/165 ,  C23C14/02 ,  C23C14/185 ,  C23C14/5806 ,  G11B5/84 ,  H01F10/123 ,  H01F41/18 ,  H01F41/22

Abstract: A method for fabricating an L10 alloy film is provided. The method includes steps of (a) providing a substrate; (b) heating the substrate as a preheated substrate at a first temperature ranged from 100° C. to 600° C. for a time period ranged from 5 minutes to 120 minutes, and then cooling the substrate to room temperature in the sputtering chamber; (c) depositing an alloy film on the preheated substrate; and (d) annealing the alloy film at a second temperature ranged from 200° C. to 500° C. to form the alloy film.

Abstract translation: 提供了一种制造L1＆lt; 0＆gt;合金膜的方法。 该方法包括以下步骤：（a）提供衬底; （b）在100℃〜600℃的第一温度下将衬底加热为预热的衬底，时间为5分钟至120分钟，然后在溅射室中将衬底冷却至室温; （c）在预热的基底上沉积合金膜; 和（d）在200℃至500℃的第二温度下对合金膜退火以形成合金膜。