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公开(公告)号：US11488809B2
公开(公告)日：2022-11-01
申请号：US16496903
申请日：2018-04-24
发明人： Kwang Su Yoo , Teugki Park , Yong Hyun Lee , Cheol Woo Chong
摘要： A capacitively coupled plasma substrate processing apparatus includes: a process chamber which is exhausted to vacuum and provides a sealed internal space; a gas inflow pipe which is connected to the process chamber to provide a process gas into the process chamber; a gas distribution unit which is connected to the gas inflow pipe to inject the process gas flowing into the gas inflow pipe in the internal space; an impedance matching network which is disposed outside the process chamber and transfers an RF power of an RF power supply to the gas distribution unit; an RF connection line which connects an output of the impedance matching network to the gas inflow pipe or the gas distribution unit; and a shielding plate which is configured such that at least one of the RF connection line and the gas inflow pipe penetrates the shielding plate and includes a ferromagnetic material.
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公开(公告)号：US11488803B2
公开(公告)日：2022-11-01
申请号：US17050779
申请日：2019-05-03
发明人： Ho Chul Kang
IPC分类号： C23C16/40 , H01J37/32 , C23C16/455
摘要： A substrate processing apparatus includes: a gas injection portion including two gas distribution portions, disposed on an upper portion in the chamber and spatially separated from each other, and two types of nozzles, respectively connected to the two gas distribution portions, having different lengths to each other; a first electrode, connected to a radio-frequency (RF) power supply and disposed below the gas injection portion to be vertically spaced apart from the gas injection portion, having a plurality of openings into which among the nozzles, one type of nozzles are respectively inserted; and a second electrode, disposed to oppose the first electrode, mounting a substrate.
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公开(公告)号：US20220262602A1
公开(公告)日：2022-08-18
申请号：US17627642
申请日：2020-06-11
发明人： Sang Kyo KWON , Jae Wan LEE
IPC分类号： H01J37/32
摘要： Disclosed herein are a substrate processing apparatus and an interlock method thereof, which can generate an interlock signal, when the temperature of each upper or lower electrode in a process chamber exceeds a range set by a user, thereby cutting off application of RF power to the substrate processing apparatus. According to the substrate processing apparatus and the interlock method thereof, in an emergency where the temperatures of the upper and lower electrodes, a difference therebetween, an inter-electrode distance, and the resistance value of each electrode are out of the respective ranges set by the user, an interlock signal and an alarm signal can be generated to cut off the application of RF power to the substrate processing apparatus. Thus, it is possible to protect equipment by preventing the equipment from being damaged by RF power and to maintain the uniformity of a thin film deposited on a substrate.
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公开(公告)号：US20210358719A1
公开(公告)日：2021-11-18
申请号：US17284438
申请日：2019-11-14
发明人： Chul-Joo HWANG
IPC分类号： H01J37/32 , H01L21/02 , C23C16/455 , C23C16/52
摘要： The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.
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公开(公告)号：US20210254213A1
公开(公告)日：2021-08-19
申请号：US17256647
申请日：2019-06-24
发明人： Jong Sik KIM , Gu Hyun JUNG , Won Woo Jung
IPC分类号： C23C16/458 , C23C16/52 , H01L21/687 , H01L21/67
摘要： A substrate processing apparatus includes a process chamber including a reaction space in which at least one substrate is mounted, a transfer chamber for transferring the at least one substrate to the process chamber, and a buffer chamber including a rotating device for rotating the at least one substrate by a predetermined angle, wherein the rotating device includes a rotating plate, a rotating shaft for rotating the rotating plate by the predetermined angle, a drive unit for driving the rotating shaft, a controller for controlling the drive unit, and a plurality of substrate support members, which are disposed on the rotating plate and on which the at least one substrate is mounted.
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公开(公告)号：US11028481B2
公开(公告)日：2021-06-08
申请号：US16233057
申请日：2018-12-26
发明人： Chui Joo Hwang , Jeung Hoon Han , Young Hoon Kim , Seung Hoon Seo
IPC分类号： C23C16/50 , C23C16/455 , C23C16/509 , H01J37/32 , C23C16/458 , H01L21/285 , H01L21/3205 , H01L21/67 , C23C16/54 , H01L21/02
摘要： Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.
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公开(公告)号：US20210035780A1
公开(公告)日：2021-02-04
申请号：US16975391
申请日：2019-04-19
发明人： WOONG KYO OH , Young Woon KIM , Kwang Su YOO , Won Tae CHO
IPC分类号： H01J37/32 , H01L21/67 , C23C16/509 , C23C16/458
摘要： The present invention relates to a substrate processing apparatus including: a chamber; a first electrode disposed on the chamber; a second electrode disposed under the first electrode, the second electrode including a plurality of openings; a plurality of protrusion electrodes extending from the first electrode to the plurality of openings of the second electrode; a substrate supporter being opposite to the second electrode and supporting a substrate; a first discharging region between a lower surface of the first electrode and an upper surface of the second electrode; a second discharging region between a side surface of the protrusion electrode and an opening inner surface of the second electrode; a third discharging region between a lower surface of the protrusion electrode and the opening inner surface of the second electrode; and a fourth discharging region between the second electrode and the substrate, wherein plasma is generated in at least one region of the first to fourth discharging regions.
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公开(公告)号：US10818534B2
公开(公告)日：2020-10-27
申请号：US16264637
申请日：2019-01-31
发明人： Ki Bum Kim , Seung Youb Sa , Ram Woo , Myung Jin Lee , Seung Dae Choi , Jong Sung Choi , Ho Boem Her
IPC分类号： H01L21/683 , H01L21/687
摘要： An embodiment of a substrate treatment device may comprise: a disk provided to be able to rotate; at least one susceptor arranged on the disk, a substrate being seated on the upper surface of the susceptor, the susceptor rotating, as the disk rotates, and revolving about the center of the disk as the axis; a metal ring coupled to the lower portion of the susceptor and arranged such that the center of the metal ring coincides with the center of the susceptor, and a magnet arranged radially on the lower portion of the disk with reference to the center of the disk and provided such that at least a part of the magnet faces the metal ring in the up/down direction.
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公开(公告)号：US10665740B2
公开(公告)日：2020-05-26
申请号：US15735599
申请日：2016-06-10
发明人： Yong Hyun Kim , Chang Kyun Park , Young Gi Kim , Duck Ho Kim , Kyung In Min , Sang Su Choi
IPC分类号： H01L31/0463 , H01L31/0224 , H01L31/18 , H01L31/0445 , H01L31/0465 , H01L31/0376
摘要： Disclosed is a thin film type solar cell which prevents short circuit from occurring between a first electrode and a second electrode due to a burr produced in a separation part, thereby preventing an output from being reduced. The thin film type solar cell includes a substrate, a first electrode disposed over the substrate and being apart from an adjacent first electrode by a first separation part, a semiconductor layer disposed over the first electrode and being apart from an adjacent semiconductor layer by a contact part and a second separation part, and a second electrode disposed over the semiconductor layer and being apart from an adjacent second electrode by the second separation part. The semiconductor layer contacts the substrate through the first separation part, and the second electrode contacts the first electrode through the contact part. A height of a burr produced in the second separation part is lower than a height between the first electrode and the second electrode.
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公开(公告)号：US20200161096A1
公开(公告)日：2020-05-21
申请号：US16688857
申请日：2019-11-19
申请人： Hong-Young CHANG , Sang-Hun Seo , Yun-Seong Lee
发明人： Hong-Young CHANG , Sang-Hun Seo , Yun-Seong Lee
IPC分类号： H01J37/32
摘要： Provided are a plasma generating apparatus and a substrate treating apparatus. The plasma generating apparatus includes a plurality of ground electrodes arranged inside a vacuum container and extending parallel to each other and power electrodes arranged between the ground electrodes. An area where a distance between the ground electrode and the power electrode is constant exists, and the power electrodes are tapered in a direction facing the substrate. The power electrodes are connected to an RF power source, and height of the power electrode is greater than that of the ground electrode in the direction facing the substrate.
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