公开(公告)号：US20140035075A1

公开(公告)日：2014-02-06

申请号：US14048704

申请日：2013-10-08

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Seung Hyuk Kang ,  Xia Li ,  Kangho Lee

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic tunnel junction device includes a Synthetic Anti-Ferromagnetic (SAF) layer, a first free layer, and second free layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers. The first free layer is magneto-statically coupled to the second free layer. A thickness of the spacer layer is at least 4 Angstroms.

Abstract translation: 磁性隧道结装置包括合成反铁磁（SAF）层，第一自由层和第二自由层。 磁性隧道结装置还包括在第一和第二自由层之间的间隔层。 第一自由层被磁静态耦合到第二自由层。 间隔层的厚度至少为4埃。

公开(公告)号：US20140021570A1

公开(公告)日：2014-01-23

申请号：US14036354

申请日：2013-09-25

Applicant: QUALCOMM INCORPORATED

Inventor： Wei-Chuan Chen ,  Xia Li ,  Seung Hyuk Kang

IPC: H01L43/12 ,  H01L43/02

CPC classification number: G11C11/16 ,  G11C11/161 ,  H01L23/552 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus for shielding a shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via.

Abstract translation: 提供了用于屏蔽屏蔽非易失性存储器的方法和装置，例如屏蔽磁性隧道结（MTJ）装置与磁通量。 在一个示例中，屏蔽层邻近MTJ器件的电极形成，使得屏蔽层基本上围绕电极的表面，并且金属线耦合到屏蔽层。 金属线可以通过通孔耦合到屏蔽层。