公开(公告)号：US08951851B2

公开(公告)日：2015-02-10

申请号：US14086207

申请日：2013-11-21

Applicant: Boe Technology Group Co., Ltd.

Inventor： Xueyan Tian ,  Chunping Long

IPC: H01L29/66 ,  H01L21/02 ,  C30B13/24 ,  C30B29/06 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  B23K26/08

CPC classification number: H01L21/02686 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0734 ,  B23K26/0738 ,  B23K26/083 ,  B23K26/352 ,  B23K2101/42 ,  B23K2103/56 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/66757

Abstract: A method of manufacturing a low temperature polysilicon film comprises: providing a substrate on a platform; forming a buffer layer on said substrate; forming an amorphous silicon layer on said buffer layer; and heating and annealing said amorphous silicon layer to allow said amorphous silicon layer to form a polycrystalline silicon layer; wherein a thermal insulating layer is formed on a bottom surface of said substrate or a top surface of the platform, before said buffer layer is formed on said substrate.

Abstract translation: 制造低温多晶硅膜的方法包括：在平台上提供衬底; 在所述衬底上形成缓冲层; 在所述缓冲层上形成非晶硅层; 并且对所述非晶硅层进行加热和退火以允许所述非晶硅层形成多晶硅层; 其中在所述衬底的底表面或所述平台的顶表面之前，在所述衬底上形成所述缓冲层之前，形成绝热层。