公开(公告)号：US09410901B2

公开(公告)日：2016-08-09

申请号：US14643148

申请日：2015-03-10

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden

IPC: H01L25/00 ,  G01N21/95 ,  G01N21/88 ,  H01L27/146 ,  H01L27/148 ,  H01L31/107 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L27/14632 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2201/061 ,  G01N2201/0638 ,  G01N2201/12 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14681 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14856 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm−3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

Abstract translation: 高灵敏度图像传感器包括硅的外延层，其是固有的或轻掺杂的（例如掺杂水平小于约1013cm-3）。 CMOS或CCD电路制造在外延层的前侧。 外延p和n型层生长在外延层的背面。 在n型外延层上沉积纯硼层。 在硼沉积过程中，一些硼从背面被驱动到几nm的n型外延层中。 可以将抗反射涂层施加到纯硼层。 在传感器的操作期间，将数十至几百伏的负偏压施加到硼层，以加速光电子远离背面，并通过雪崩效应产生额外的电子。 接地的p阱可以根据需要从反向偏置的外延层保护有源电路。

公开(公告)号：US20150177159A1

公开(公告)日：2015-06-25

申请号：US14273424

申请日：2014-05-08

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Chuang ,  John Fielden

IPC: G01N21/88

CPC classification number: G01N21/8851 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/14636 ,  H01L31/02 ,  H04N5/3577 ,  H04N5/3765

Abstract: A method of inspecting a sample at high speed includes directing and focusing radiation onto a sample, and receiving radiation from the sample and directing received radiation to an image sensor. Notably, the method includes driving the image sensor with predetermined signals. The predetermined signals minimize a settling time of an output signal of the image sensor. The predetermined signals are controlled by a phase accumulator, which is used to select look-up values. The driving can further include loading an initial phase value, selecting most significant bits of the phase accumulator, and converting the look-up values to an analog signal. In one embodiment, for each cycle of a phase clock, a phase increment can be added to the phase accumulator. The driving can be performed by a custom waveform generator.

Abstract translation: 高速检查样品的方法包括将辐射引导和聚焦到样品上，并且接收来自样品的辐射并将接收的辐射引导到图像传感器。 值得注意的是，该方法包括以预定信号驱动图像传感器。 预定信号最小化图像传感器的输出信号的建立时间。 预定信号由相位累加器控制，该相位累加器用于选择查找值。 驱动还可以包括加载初始相位值，选择相位累加器的最高有效位，以及将查找值转换为模拟信号。 在一个实施例中，对于相位时钟的每个周期，相位增量可以被加到相位累加器。 驱动可由自定义波形发生器执行。

公开(公告)号：US20150155680A1

公开(公告)日：2015-06-04

申请号：US14586646

申请日：2014-12-30

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong ,  Vladimir Dribinski ,  Yujun Deng ,  John Fielden

IPC: H01S3/108

CPC classification number: H01S3/1083 ,  G01N21/84 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02F1/3534 ,  G02F1/3536 ,  G02F1/39 ,  G02F2001/3507 ,  G02F2201/16 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/0602 ,  H01S3/067

Abstract: A laser for generating an output wavelength of approximately 193.4 nm includes a fundamental laser, an optical parametric generator, a fourth harmonic generator, and a frequency mixing module. The optical parametric generator, which is coupled to the fundamental laser, can generate a down-converted signal. The fourth harmonic generator, which may be coupled to the optical parametric generator or the fundamental laser, can generate a fourth harmonic. The frequency mixing module, which is coupled to the optical parametric generator and the fourth harmonic generator, can generate a laser output at a frequency equal to a sum of the fourth harmonic and twice a frequency of the down-converted signal.

Abstract translation: 用于产生约193.4nm的输出波长的激光器包括基本激光器，光参量发生器，第四谐波发生器和混频模块。 耦合到基本激光器的光学参数发生器可以产生下变频信号。 可以耦合到光学参数发生器或基本激光器的第四谐波发生器可以产生四次谐波。 耦合到光参量发生器和第四谐波发生器的混频模块可产生频率等于下变频信号频率的四次谐波和两倍的频率的激光输出。

公开(公告)号：US20150041666A1

公开(公告)日：2015-02-12

申请号：US14455161

申请日：2014-08-08

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Xiaoxu Lu ,  John Fielden ,  Ivan Maleev

IPC: G01N21/95 ,  G01J1/04

CPC classification number: G01N21/9501 ,  G01J1/04 ,  G01N21/8806

Abstract: Methods and systems for minimizing interference among multiple illumination beams generated from a non-uniform illumination source to provide an effectively uniform illumination profile over the field of view of an inspection system are presented. In some examples, a pulsed beam of light is split into multiple illumination beams such that each of the beams are temporally separated at the surface of the specimen under inspection. In some examples, multiple illumination beams generated from a non-uniform illumination source are projected onto spatially separated areas on the surface of the specimen. A point object of interest illuminated by each area is imaged onto the surface of a time-delay integration (TDI) detector. The images are integrated such that the relative position of the illumination areas along the direction of motion of the point object of interest has no impact on the illumination efficiency distribution over the field of view.

Abstract translation: 提出了用于最小化从不均匀照明源产生的多个照明光束之间的干扰的方法和系统，以在检查系统的视场上提供有效均匀的照明轮廓。 在一些示例中，脉冲光束被分成多个照明光束，使得每个光束在被检查的样品的表面处在时间上分离。 在一些示例中，从不均匀照明源产生的多个照明光束投影到样本表面上的空间分离的区域上。 由每个区域照明的感兴趣的点对象被成像到时间延迟积分（TDI）检测器的表面上。 图像被集成为使得照明区域沿着感兴趣点对象的运动方向的相对位置对视场的照明效率分布没有影响。

公开(公告)号：US20140362880A1

公开(公告)日：2014-12-11

申请号：US14294019

申请日：2014-06-02

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Xiaoxu Lu ,  John Fielden

IPC: H01S3/109

CPC classification number: H01S3/109 ,  G02F1/353 ,  G02F1/3534 ,  G02F1/3558 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2201/17 ,  G02F2203/15 ,  H01S3/0092

Abstract: A deep ultra-violet (DUV) continuous wave (CW) laser includes a fundamental CW laser configured to generate a fundamental frequency with a corresponding wavelength between about 1 μm and 1.1 μm, a third harmonic generator module including one or more periodically poled non-linear optical (NLO) crystals that generate a third harmonic and an optional second harmonic, and one of a fourth harmonic generator module and a fifth harmonic generator. The fourth harmonic generator module includes a cavity resonant at the fundamental frequency configured to combine the fundamental frequency with the third harmonic to generate a fourth harmonic. The fourth harmonic generator module includes either a cavity resonant at the fundamental frequency for combining the fundamental frequency with the third harmonic to generate a fifth harmonic, or a cavity resonant at the second harmonic frequency for combining the second harmonic and the third harmonic to generate the fifth harmonic.

Abstract translation: 深紫外（DUV）连续波（CW）激光器包括配置为产生具有在约1μm和1.1μm之间的相应波长的基频的基本CW激光器;三次谐波发生器模块，包括一个或多个周期性极化非线性 产生三次谐波和可选的二次谐波的线性光学（NLO）晶体，以及四次谐波发生器模块和五次谐波发生器之一。 第四谐波发生器模块包括在基频处谐振的腔体，其被配置为将基频与三次谐波组合以产生第四谐波。 第四谐波发生器模块包括在基频处共振的腔体，用于将基频与三次谐波组合以产生五次谐波，或者在二次谐波频率下共振谐振以组合二次谐波和三次谐波，以产生 五次谐波。

公开(公告)号：US20140291493A1

公开(公告)日：2014-10-02

申请号：US14198175

申请日：2014-03-05

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  David L. Brown ,  John Fielden

IPC: H01L31/11 ,  H01L31/167

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及形成在p掺杂半导体层的第二表面上的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其他实施例中，半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。