公开(公告)号：US10355212B2

公开(公告)日：2019-07-16

申请号：US15249826

申请日：2016-08-29

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yoshihiko Nakano ,  Shigehiko Mori ,  Takeshi Gotanda ,  Fumihiko Aiga ,  Rumiko Hayase

IPC: H01L31/00 ,  H01L51/00 ,  C08K3/04 ,  C08G61/12 ,  C08L65/00 ,  H01L51/42 ,  H01L31/032 ,  H01L31/0256 ,  C08L75/04

Abstract: In one embodiment, a polymer includes a recurring unit containing a bivalent group expressed by a formula (1) shown below. A weight-average molecular weight of the polymer is in a range of 3000 or more to 1000000 or less. R1 is a monovalent group selected from hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkanoyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted heteroaryl group. X is an atom selected from oxygen, sulfur, and selenium. Y and Z are each independently a bivalent group selected from a carbonyl group, a sulfinyl group, and a sulfonyl group. A case where Y and Z are both the carbonyl groups is excluded.

公开(公告)号：US20190198687A1

公开(公告)日：2019-06-27

申请号：US16112999

申请日：2018-08-27

Applicant: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD.

Inventor： Xinlian LI

IPC: H01L31/0236 ,  H01L31/0445 ,  H01L31/054 ,  H01L31/18 ,  H01L31/032

CPC classification number: H01L31/02366 ,  H01L31/0322 ,  H01L31/0445 ,  H01L31/054 ,  H01L31/18

Abstract: The present disclosure relates to a thin film solar cell and a method for making the same. The thin film solar cell comprises a substrate and a back electrode layer, a light absorbing layer, a buffer layer, a window layer and an upper electrode disposed on the substrate; and a surface of the light absorbing layer comprises a light trapping structure.

公开(公告)号：US10316196B2

公开(公告)日：2019-06-11

申请号：US15713104

申请日：2017-09-22

Applicant: Hunt Energy Enterprises, L.L.C.

Inventor： Michael D. Irwin ,  Jerred A. Chute ,  Vivek V. Dhas ,  Kamil Mielczarek

IPC: H01L51/42 ,  C09D1/00 ,  H01G9/20 ,  H01L51/00 ,  C09D7/63 ,  C09D7/20 ,  H01L31/032 ,  C09D11/02 ,  C09D11/36 ,  H01G9/00 ,  H01L51/44 ,  H01L31/0256

Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

公开(公告)号：US20190173031A1

公开(公告)日：2019-06-06

申请号：US16153858

申请日：2018-10-08

Applicant: InVisage Technologies Inc.

Inventor： Edward Hartley Sargent ,  Ghada Koleilat ,  Larissa Levina

IPC: H01L51/42 ,  H01L51/44 ,  H01L31/07 ,  B82Y30/00 ,  H01L31/032 ,  B82Y20/00 ,  H01L31/0384 ,  H01L31/0352

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

公开(公告)号：US20190173025A1

公开(公告)日：2019-06-06

申请号：US16260202

申请日：2019-01-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： RYUUSUKE UCHIDA ,  MICHIO SUZUKA

IPC: H01L51/00 ,  H01L51/42 ,  H01L51/44 ,  H01L31/032

Abstract: A solar cell comprises a first electrode, a second electrode opposite to the first electrode, and a photoabsorber layer located between the first electrode and the second electrode and including a first layer and a second layer. The first layer contains a first compound which has a perovskite structure represented by the composition formula A1M1X13, where A1 is a monovalent cation, M1 is a divalent cation, and X1 is a halogen anion. The second layer contains a second compound which has a perovskite structure represented by the composition formula A2M2X23, where A2 is a monovalent cation, M2 is a divalent cation, and X2 is a halogen anion, and has a different composition from the first compound. At least one of the first compound in the first layer and the second compound in the second layer has a single orientation.

公开(公告)号：US10312403B2

公开(公告)日：2019-06-04

申请号：US14659141

申请日：2015-03-16

Applicant: Global Solar Energy, Inc.

Inventor： Jeffrey S. Britt ,  Scott Wiedeman

IPC: C23C14/22 ,  H01L31/18 ,  H01L31/0445 ,  C23C14/02 ,  C23C14/06 ,  C23C14/54 ,  C23C14/56 ,  H01L31/0392 ,  H01L31/0749 ,  C23C14/24 ,  H01L31/032

Abstract: Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.

公开(公告)号：US20190157490A1

公开(公告)日：2019-05-23

申请号：US16235148

申请日：2018-12-28

Applicant: International Business Machines Corporation

Inventor： Priscilla D. Antunez ,  Talia S. Gershon ,  Richard A. Haight ,  Teodor K. Todorov

IPC: H01L31/0749 ,  H01L31/032 ,  H01B1/06 ,  H01L31/02 ,  C09D11/52 ,  H01L31/18

Abstract: Silver-containing absorbers for photovoltaic devices and techniques for fabrication thereof are provided. In one aspect, a method of forming an ink includes: mixing a silver halide and a solvent to form a first solution; mixing a metal, sulfur, and the solvent to form a second solution; combining the first solution and the second solution to form a precursor solution; and adding constituent components for an absorber material to the precursor solution to form the ink. Methods of forming an absorber film, a photovoltaic device, and the resulting photovoltaic device are also provided.

公开(公告)号：US10295679B2

公开(公告)日：2019-05-21

申请号：US15609476

申请日：2017-05-31

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: G01T1/24 ,  H01L31/0224 ,  H01L31/032

Abstract: A semiconductor may include a semiconductor detection material including a first side and a second side opposite to each other, a cathode disposed on the first side, and an anode disposed on the second side. The anode includes an array of pixel anodes defining detection pixels of the semiconductor detector, and intermediate anodes disposed between adjacent ones of the pixel anodes. According to an embodiment of the present disclosure, it is possible to achieve signal correction to improve the energy resolution and the signal-to-noise ratio of the detector.

公开(公告)号：US20190144277A1

公开(公告)日：2019-05-16

申请号：US16095029

申请日：2017-12-22

Applicant: LG CHEM, LTD.

Inventor： Kyung Moon KO ,  Cheol Hee PARK ,  Chee Sung PARK ,  Min Kyoung KIM

IPC: C01B19/00 ,  H01L31/032 ,  H01L35/14

Abstract: A novel compound semiconductor which can be used for a solar cell, a thermoelectric material, or the like, and the use thereof.

公开(公告)号：US10249658B2

公开(公告)日：2019-04-02

申请号：US15679210

申请日：2017-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Ikeda ,  Yoshiyuki Kurokawa

IPC: H01L27/146 ,  H01L29/24 ,  H01L29/786 ,  H01L31/0272 ,  H01L31/032 ,  H02S40/44

Abstract: An imaging device which offers an image with high quality and is suitable for high-speed operation is provided. The imaging device includes a first region to an n-th region (n is a natural number of 2 or more and 16 or less) each including a first circuit, a second circuit, a third circuit, and a fourth circuit. The first to third circuits each include a transistor in which silicon is used in an active layer or an active region. The fourth circuit includes a photoelectric conversion element and a transistor in which an oxide semiconductor is used in an active layer. The first circuit includes a region overlapping with the fourth circuit. The third circuit includes a region overlapping with the fourth circuit.